MBR6060PT Series - 勿動

RoHS
RoHS
MBR6060PT Series
SEMICONDUCTOR
Nell Semiconductors
Dual Common-Cathode Schottky Rectifier,
Available
RoHS*
60A (30A x2), 60V
COMPLIANT
FEATURES
150°C T J operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness, long
term reliability and overvoltage protection
Compliant to RoHS
Designed and qualified according to
JEDEC-JESD47
Solder bath temperature 260°C maximum,
40 s per JESD 22B-106 (for TO-247AB
package)
1
2
3
TO-247AB
CASE
PIN 2
DESCRIPTION
PIN 1
The MBR6060PT Schottky rectifier has been
optimized for low reverse leakage at high
temperature. The proprietary barrier technology
allows for reliable operation up to 150°C junction
temperature.
PIN 3
PRODUCT SUMMARY
APPLICATIONS
Switching mode power supplies
DC to DC converters
Freewheeling diodes
Reverse battery protection.
MECHANICAL DATA
Case: TO-247AB (TO-3P)
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
l F(AV)
30A x 2
VR
60V
V F at l F
0.65V
l RM max .
100mA at 125°C
T J max.
150°C
Diode variation
Dual dice, Common cathode
E AS
27 mJ
MAJOR RATINGS AND CHARACTERISTICS
VALUE
UNIT
30 x 2
A
60
V
8.3 ms single half sine-wave
400
A
VF
30 A pk , T J = 125°C
0.65
V
TJ
Range
-65 to 150
°C
SYMBOL
l F(AV)
CHARACTERISTICS
Rectangular waveform
V RRM
l FSM
www.nellsemi.com
Page 1 of 6
MBR6060PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
VOLTAGE RATINGS
SYMBOL
PARAMETER
Maximum DC reverse voltage
VALUE
UNIT
60
V
VR
Maximum working peak reverse voltage
V RWM
V DC
Maximum DC blocking voltage
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
per device
per diode
VALUE
TEST CONDITIONS
UNIT
60
l F(AV)
T C = 122°C, rated V R
A
30
Non-repetitive peak surge current
l FSM
Surge applied at rated load condition half wave
single phase 60 Hz
Non-repetitive avalanche energy
E AS
T J = 25°C, l AS = 4A, L = 3.4mH
Repetitive avalanche current
l AR
Current decaying linearly to zero in 1 μs
Frequency limited by T J maximum V A = 1.5 x V R typical
400
A
27
mJ
6
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
I F = 30A
VALUE
UNIT
0.76
T J = 25°C
Maximum forward voltage drop
V FM (1)
I F = 60A
0.90
I F = 30A
0.65
V
T J = 125°C
I F = 60A
Maximum instantaneous reverse current
l RM (1)
0.80
T J = 25°C
1
Rated DC voltage
mA
T J = 125°C
100
Maximum junction capacitance
CT
V R = 5 V DC (test signal range
100 kHz to 1 MHZ) 25°C
800
pF
Typical series inductance
LS
Measured from top of terminal to
mounting plane
7.5
nH
10000
V/µs
Maximum voltage rate of change
dV/dt
Rated V R
Note
(1) Pulse width < 300 µs, duty cycle < 2%
www.nellsemi.com
Page 2 of 6
RoHS
RoHS
MBR6060PT Series
SEMICONDUCTOR
Nell Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
VALUE
TEST CONDITIONS
Maximum junction temperature range
TJ
-65 to 150
Maximum storage temperature range
T stg
-65 to 175
UNIT
°C
Maximum thermal resistance,
junction to case
1.0
R thJC
DC operation
R thCS
Mounting surface, smooth
and greased
°C/W
Typical thermal resistance,
case to heatsink
0.24
6.2
g
0.22
oz.
minimum
6 (5)
maximum
12 (10)
kgf . cm
(lbf . in)
Approximate weight
Mounting torque
Case style TO-247 AB
Marking device
MBR6060PT
Ordering Information Table
Device code
www.nellsemi.com
MBR
60
60
PT
1
2
3
4
1
-
Schottky MBR series
2
-
Current rating (60 = 60A, 30A x 2)
3
-
Voltage ratings, 60 = 60V
4
-
Circuit configuration, Center tap common cathode,
TO-247 AB series package
Page 3 of 6
RoHS
RoHS
MBR6060PT Series
SEMICONDUCTOR
Nell Semiconductors
Fig.2 Typical values of reverse current vs.
reverse voltage (Per Leg)
500
1000
Reverse current, l R (mA)
lnstantaneous forward current, I F (A)
Fig.1 Maximum forward voltage drop
characteristics (Per Leg)
100
T J =125°
T J =25°
10
1
0
0.2
0.4
0.6
0.8
1.0
T J=1 25 °
T J= 1 0 0
10
°
°
T J= 7 5
1
T J= 5 0
°
0.1
T J= 2 5 °
0.01
0.001
0
1.2
6
12
18
24
30
36
42
48
54
Reverse voltage, V R (V)
Fig.3 Typical junction capacitance vs.
reverse voltage (Per Leg)
Fig.4 Maximum allowable case temperature vs.
average forward current (Per Leg)
Allowable case temperature ( ° C)
1000
TJ = 2 5 °
100
0
10
20
30
40
150
140
DC
130
Square wave (D = 0.50)
100% Rated V R applied
120
110
See note (1)
100
50
0
5
10
15
20
25
30
35
40
Average forward current, l F(AV) (A)
Reverse voltage, V R (V)
Fig.5 Maximum thermal impedance R th(j-c) characteristics (Per Leg)
Thermal lmpedance, R th(j-c) (°C/W)
60
Forward voltage drop, V FM (V)
10000
Junction capacitance, C T (pF)
T J=1 50 °
100
10
1
P DM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
t1
t2
Notes:
1. Duty Factor D =t 1 /t 2
2.Peak T J = PDM x R th(j-c) +T C
0.01
0.1
Rectangular pulse duration, t 1 (s)
www.nellsemi.com
Page 4 of 6
1
10
100
45
MBR6060PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
Fig.7 Maximum non-repetitive peak worward
surge current (Per Leg)
Fig.6 Forward power loss characteristics
(Per Leg)
Non-repetitive peak forward surge
current, l FSM (A)
Average power loss (W)
30
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
25
20
15
RMS limit
10
DC
5
0
0
5
10
15
20
25
30
35
45
40
400
At any rated load condition
and with rated V RRM applied
following surge
300
200
100
0
10
1
Average forward current, l F(AV) (A)
Number of cycles at 60Hz
Fig.8 Unclamped inductive test circuit
L
D.U.T.
Rg = 25Ω
Current
monitor
High-speed
switch
IRF460B
Freewheel
diode
40FD04
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 100% Rated V R
www.nellsemi.com
Page 5 of 6
+ V d = 25V
100
MBR6060PT Series
SEMICONDUCTOR
RoHS
RoHS
Nell Semiconductors
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)
1
4.50 (0.177)Max
2
Anode
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
3
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
5.45 (0.215)
2.21 (0.087)
2.59 (0.102)
CASE
PIN 2
All dimensions in millimeters (inches)
www.nellsemi.com
Page 6 of 6
PIN 1
PIN 3