Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs (N Type) GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage VR 8 Power PO 20 λP Wavelength Typ Max Unit Condition 1.55 1.65 V IF=100mA V IR=10uA 30 mW IF=100mA 940 nm IF=20mA ∆λ 45 nm ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------------- 11.0mil x --------------------------- 12.0mil x 130um --------------------------11mil --------------------------6.7mil --------------------------- (b) (d) (a) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 P Epi (e) N Epi (c) www.auk.co.kr 11.0mil 12.0mil Substrate 4. Mechanical Data (a) Emission Area N Side Electrode IF=20mA