Infrared LED Chip OPA8537RC GaAs/GaAlAs 1. Material Substrate GaAs (N Type) Removed Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbo Min 3. Electro-Optical Characteristics Forward Voltag VF Typ Max Unit Condition 1.55 1.65 V IF=30mA V IR=10uA mW IF=30mA nm IF=30mA Reverse Voltage VR 3 PO 1.2 1.4 λP 850 863 Power Wavelength 880 ∆λ 30 nm IF=30mA ※ Note : LED chip is mounted on TO-18 gold header without resin coati 4. Mechanical Data (a) Diameter of Emission Area ---------- 128um (b) Bottom Area (c) Chip Thickness -------------------- 210um X 330um -------------------- 250um AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr