Infrared LED Chip OPA9423 AlGaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Symbol Parameter 3. Electro-Optical VF Characteristics Forward Voltage Reverse Voltage Power Wavelength (N Type) (P/N Type) Min Typ Max Unit Condition 1.3 1.4 V IF=20mA V IR=10uA mW IF=20mA nm IF=20mA VR 8 F 1.54 PO G 1.62 H(G1) 1.69 λP 940 ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. ※ "Min" of Po is actually "Avg Min" (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height ------------------------------- 8mil x ------------------------------- 9mil x ------------------------------- 110um ------------------------------------------------------------------- (b) 10mil 6.5mil (d) (e) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 P Epi (a) N Epi (c) www.auk.co.kr 8mil 9mil Substrate 4. Mechanical Data (a) Emission Area N Side Electrode