Infrared LED Chip OPA9420AL GaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs (N Type) (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Max 1.45 Unit Condition IF=20mA V IR=10uA V VR 8 1.13 A 1.05 1.13 1.21 B 1.28 C 1.21 1.36 D 1.28 Po mW IF=20mA 1.44 E 1.36 1.52 F 1.44 1.59 G 1.52 1.69 G1 1.59 λP 940 nm IF=20mA Wavelength ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height ----------------------------- 7mil x 7mil ----------------------------- 8mil x 8mil ----------------------------- 100um ------------------------------- 9.0mil (8mil Available) ------------------------------- 4.7mil (b) (d) (e) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (a) P Epi (c) Substrate Reverse Voltage Power Typ 1.3 N Side Electrode