Infrared LED Chip OPA9454 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs (N Type) GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max Unit Condition 1.36 1.4 V IF=100mA V IR=10uA Reverse Voltage VR Power PO 2.3 mW IF=20mA λP 940 nm IF=20mA Wavelength 4 ∆λ 45 nm ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (d) Chip Thickness (e) Junction Height --------------------------- 8.0mil x --------------------------- 13.6mil x 10mil --------------------------4.7mil --------------------------- (b') (d) (e) (b) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 P Epi (a) N Epi (a') www.auk.co.kr 7.0mil 15.6mil Substrate 4. Mechanical Data (a) Emission Area N Side Electrode IF=20mA