OPA8736H Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min Typ Unit Condition V IF=10uA V IF=50mA V IR=10uA 20 mW IF=50mA 878 nm IF=50mA VF(1) 1.1 VF(2) 1.65 Reverse Voltage VR 5 Power PO 16 λP Wavelength Max 1.8 ∆λ 45 nm IF=50mA Rise Time Tr 28 ns Fall Time Tf 18 ns ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 11.6mil x 11.6mil --------------------- 12.6mil x 12.6mil --------------------130um --------------------8mil --------------------3.5mil (b) (d) (e) (a) N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (c) P Epi 4. Mechanical Data (a) Emission Area P Side Electrode