OPA6611 Red LED Chip N Side-Up GaAlAs/GaAs 1. Material Substrate GaAs (P Type) Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit Condition V IF=1mA V IF=20mA V IR=10uA 900 mcd IF=20mA 640 nm IF=20mA VF(1) 1.6 VF(2) 1.9 Reverse Voltage VR 6 Brightness Iv λd 500 Wavelength Max 2.2 ∆λ 20 nm IF=20mA ※ Note : Brightness is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10mil x 10mil --------------------- 12mil x 12mil --------------------- 130um --------------------- 11mil --------------------- 8.8mil (b) (d) (e) N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr P Epi (a) N Epi (c) Substrate 4. Mechanical Data (a) Emission Area P Side Electrode