SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features Low VGS(th): VGS(th)=1.0~3.0V Small footprint due to small package Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A) Ordering Information Part Number Marking Code Package SUF2001 SUF2001 SOP-8 SOP-8 Marking Information SUF2001 YWW Column 1: Device Code Column 2: Production Information -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TA=25C unless otherwise noted) Rating Characteristic Symbol Drain-source voltage VDSS Gate-source voltage VGSS Unit N-Ch P-Ch 30 -30 20 V V Drain current (DC) ID 5.8 -5.3 A Drain current (Pulsed) * IDP 23.2 -21.2 A Total power dissipation ** PD Avalanche current (Single) IAS 2 5.8 ② -5.3 ⑥ ② A EAS ① IAR 5.8 -5.3 A EAR 3.4 1.6 mJ Repetitive avalanche energy ① 33 ⑥ Single pulsed avalanche energy Avalanche current (Repetitive) 72 W Junction temperature TJ 150 Storage temperature range Tstg -55~150 Rth(J-A) 62.5 Thermal resistance junction to ambient mJ C C/W * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 1 of 13 SUF2001 N-channel MOSFET Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250A, VGS=0 30 - - V Gate threshold voltage VGS(th) ID=250A, VDS= VGS 1.0 - 3.0 V Drain-source cut-off current IDSS VDS=30V, VGS=0V - - 1 A Gate leakage current IGSS VDS=0V, VGS=20V - - 100 nA VGS=10V, ID=2.9A - 24 30 m VGS=5.0V, ID=2.9A - 28 34 m VDS=5V, ID=5.8A - 12 - S - 370 560 - 60 90 Drain-source on-resistance Forward transfer conductance ④ Input capacitance RDS(ON) gfs Ciss VGS=0V, VDS=10V, f=1MHz pF Output capacitance Coss Reverse transfer capacitance Crss - 36 54 Turn-on delay time ③④ td(on) - 1.2 - - 1.1 - - 2.5 - - 1.1 - - 4.2 6.3 - 0.9 1.4 - 1.4 2.1 Min Typ Max - - ISM Integral reverse diode in the MOSFET - - 6.0 VSD VGS=0V, IS=1.5A - - 1.2 V - 90 - ns - 0.5 - uC Rise time ③④ tr Turn-off delay time ③④ td(off) Fall time ③④ VDS=15V, ID=5.8A RG=10Ω tf Total gate charge ③④ Qg Gate-source charge ③④ Qgs Gate-drain charge ③④ Qgd VDS=15V, VGS=5V ID=5.8A ns nC Source-Drain Diode Ratings and Characteristics Characteristic Source current IS Source current(Pulsed) Forward voltage Symbol ① ④ Reverse recovery time trr Reverse recovery charge Qrr Test Condition Is=1.5A, diS/dt=100A/us 1.5 Unit A Note ; ① Repetitive Rating : Pulse width limited by maximum junction temperature ② L=3.4mH, IAS=5.8A, VDD=15V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2% ④ Essentially independent of operating temperature Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 2 of 13 SUF2001 P-channel MOSFET Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250A, VGS=0 -30 - - V Gate threshold voltage VGS(th) ID=250A, VDS=VGS -1.0 - -3.0 V Drain-source cut-off current IDSS VDS=-30V, VGS=0V - - 1 A Gate leakage current IGSS VDS=0V, VGS=20V - - 100 nA VGS=-10V, ID=-2.7A - 66 72 m VGS=-5.0V, ID=-2.7A - 77 83 m VDS=-5V, ID=-5.3A - 11 - S - 390 590 - 97 150 Drain-source on-resistance Forward transfer conductance ⑧ Input capacitance RDS(ON) gfs Ciss VGS=0V, VDD=-10V, f=1MHz Output capacitance Coss Reverse transfer capacitance Crss - 37 60 Turn-on delay time ⑦⑧ td(on) - 1.2 - ⑦⑧ tr - 1.1 - - 2.5 - - 1.1 - - 4.7 7.0 - 1.4 2.1 - 1.7 2.5 Min Typ Max - - -1.5 - - -6.0 Rise time Turn-off delay time ⑦⑧ Fall time ⑦⑧ td(off) tf Total gate charge ⑦⑧ Gate-source charge Gate-drain charge VDS=-15V, ID=-5.3A RG=10Ω ⑦⑧ ⑦⑧ Qg VDS=-15V, VGS=-5V ID=-5.3A Qgs Qgd pF ns nC Source-Drain Diode Ratings and Characteristics Characteristic Symbol Test Condition Unit Source current IS Source current (Pulsed) ⑤ ISM Integral reverse diode in the MOSFET Forward voltage ⑧ VSD VGS=0V, IS=-1.5A - - -1.2 V Is=-1.5A diS/dt=100A/us - 90 - ns - 0.5 - uC Reverse recovery time trr Reverse recovery charge Qrr A Note ; ⑤ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ⑥ L=2.0mH, IAS=-5.0A, VDD=-15V, RG=25Ω ⑦ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2% ⑧ Essentially independent of operating temperature Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 3 of 13 SUF2001 N-CH Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS ℃ - Fig. 3 RDS(on) - ID m Fig. 4 IS - VSD ℃ Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 4 of 13 SUF2001 Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 10 Safe Operating Area Fig. 9 ID - Ta * t Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 5 of 13 SUF2001 Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 6 of 13 SUF2001 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 7 of 13 SUF2001 P-CH Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS - - ℃ - - - m Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ - a - - Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 8 of 13 SUF2001 Fig. 8 RDS(on) - TJ - Fig. 7 VDSS - TJ C C Fig. 10 Safe Operating Area Fig. 9 ID - Ta * t Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 9 of 13 SUF2001 Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 10 of 13 SUF2001 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 11 of 13 SUF2001 Package Outline Dimensions ※ Recommended Land Pattern Rev. date: 13-MAR-13 KSD-T7F002-001 [unit: mm] www.auk.co.kr 12 of 13 SUF2001 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. Rev. date: 13-MAR-13 KSD-T7F002-001 www.auk.co.kr 13 of 13