STK58X60LM Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Ordering Information Type NO. Marking STK58X60LM STK58X60 Package Code MPT Outline Dimensions unit : mm 8.40~8.60 7.30~7.50 1.70 Typ. 1.20 Max. 13.05~13.85 0.70 Max. 0.60 Max. 2.50 Typ. 2.50 Typ. 2 3 0.60 Max. 1.95~2.05 3.30~3.50 1 KSD-T0H016-000 PIN Connections 1. Gate 2. Drain 3. Source 1 STK58X60LM Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V Drain current (DC) ID 0.58 A * IDP 2.4 A Drain Power dissipation PD 1.3 W Drain current (Pulsed) Avalanche current (Single) ② IAS 0.6 A Single pulsed avalanche energy ② EAS 3.9 mJ Avalanche current (Repetitive) ① IAR 0.6 A Repetitive avalanche energy ① EAR 110 μJ TJ Tstg 150 -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-ambient Symbol Typ. Max Unit Rth(J-a) - 96.2 ℃/W KSD-T0H016-000 2 STK58X60LM Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=0.29A - 3.8 4.7 Ω Forward transfer admittance ④ gfs VDS=10V, ID=0.29A - 2.3 - S - 290 435 - 33 49 - 6.0 9.0 - 22 - - 10.5 - - 7 - - 10.5 - - 8.4 12.6 - 1.4 2.1 - 2.6 3.9 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=300V, VGS=10V ID=0.58A, RG=25Ω ③④ VDD=300V, VGS=10V ID=0.58A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Continuous source current IS Test Condition pF ns nC (Ta=25°C) Min Typ Max - - 0.6 - - 2.4 Unit Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=0.29A - - 1.4 V Reverse recovery time trr - 230 - ns Reverse recovery charge Qrr Is=0.58A, VGS=0V dis/dt=100A/us - 0.84 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=20mH, IAS=0.58A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0H016-000 3 STK58X60LM Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS : - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T0H016-000 4 STK58X60LM Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C C Fig. 10 Safe Operating Area Fig. 9 ID - TC ` * KSD-T0H016-000 5 STK58X60LM Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0H016-000 6 STK58X60LM Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0H016-000 7 STK58X60LM The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0H016-000 8