AGILENT HEDS-1300

H
Optical Reflective Sensors
Technical Data
HEDS-1200 High
Resolution Infrared
Sensor
HEDS-1300 Precision
Resolution Sensor
Features
Description
• Focused Emitter and
Detector in a Single Package
• TO5 Package
• Binning of Sensors by
Photocurrent (Ipr)
Both the HEDS-1200 and HEDS1300 sensor are fully integrated
modules designed for applications
requiring optical reflective
sensing. The modules contain an
LED emitter (at the appropriate
wavelengths) and a matched I.C.
photodetector. A bifurcated
aspheric lens is used to image the
active areas of the emitter and the
detector to a single spot that
defines the resolution of the
sensor. The output signal is a current generated by the photodiode.
Applications
• Bar Code Scanning
• Pattern Recognition and
Verification
• Object Sizing
• Optical Limit Switching
• Optical/Surface Inspection
• Tachometry
• Edge/Line Sensing
• Dimensional Monitoring
Selection Guide
Sensor
Part Number
Resolution
LED Wavelength
Package Dimensions
MAXIMUM SIGNAL POINT – MSP
9.40 (0.370)
8.51 (0.335)
HEDS-1200
HEDS-1300
0.13 mm (0.005 in.)
0.19 mm (0.0075 in.)
820 nm
700 nm
S.P.
5.08
(0.200)
REFERENCE PLANE
12.0
(0.473)
R.P.
8.33 (0.328)
7.79 (0.307)
CL
1.14 (0.045)
0.73 (0.029)
5.08
(0.200)
4.27 ± 0.25
(0.168 ± 0.010)
Z
0.86 (0.034)
0.73 (0.029)
15.24 (0.600)
12.70 (0.500)
11.50 (0.453)
11.22 (0.442)
NOTES:
1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES).
2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.
3. THE REFERENCE PLANE (R.P.) IS THE TOP SURFACE OF THE PACKAGE.
4. NICKEL CAN AND GOLD PLATED LEADS.
5. S.P. = SEATING PLANE.
6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.
4-22
5965-5947E
Mechanical
Considerations
The HEDS-1200 and HEDS-1300
sensors are packaged in a high
profile 8 pin TO5 metal can with a
glass window. The emitter and
photodetector chips are mounted
on the header at the base of the
package. Positioned above these
active elements is a bifurcated
aspheric acrylic lens that focuses
them to the same point.
HEDS-1200 Optical System
SCHEMATIC DIAGRAM
REFLECTOR
8
REFERENCE
PLANE
Z
In applications requiring contact
scanning, protective focusing tips
are available. Focusing tips are
available in either metal (HBCS2999 or HBCS-4999) or
polycarbonate (HBCS-A998 or
HBCS-A999) packages using a
rugged sapphire ball as the
contact surface.
DP
7
DP
LED
6
3
3
LED
5
DS
4
DS
2
4
CASE, SUBSTRATE
TOP VIEW
PIN #
2
3
4
6
FUNCTION (HEDS-1200)
PHOTODIODE ANODE, SUBSTRATE, CASE
PHOTODIODE CATHODE
LED CATHODE, SUBSTRATE, CASE
LED ANODE
HEDS-1300 Optical System
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
TRANSISTOR
NOT SPECIFIED
Electrical Operations
Both the HEDS-1200 and HEDS1300 sensors have the following
in common. The detector of the
sensor is a single photodiode. The
cathode of the emitter is physically
and electrically connected to the
case-substrate of the device.
Applications that require modulation or switching of the LED
should be designed to have the
cathode connected to the electrical ground of the system. Refer to
the Schematic and Connection
Diagrams that follow.
1
2
6
The sensors can be rigidly
secured by commercially available
TO5 style heat sinks, or 8 pin
0.200 inch diameter pin circle
sockets. These fixtures provide a
stable reference platform for
affixing the sensors to a circuit
board.
CONNECTION DIAGRAM
REFLECTOR
8*
REFERENCE
PLANE
Z
1*
7
DP
LED
2
6
2
1*
LED
8*
3
DS
6
3
5
DS
4
DS
4
*NO CONNECTION TO BE MADE TO PIN 1 AND PIN 8
PIN #
FUNCTION (HEDS-1300)
2
3
4
6
PHOTODIODE ANODE
PHOTODIODE CATHODE
LED CATHODE, SUBSTRATE, CASE
LED ANODE
TOP VIEW
4-23
Absolute Maximum Ratings @ TA = 25°C
Parameter
Symbol
HEDS-
Min.
Max.
Units
Storage Temperature
Ts
1200
1300
-40
-40
+75
+75
°C
°C
Operating Temperature
TA
1200
1300
-20
-20
+70
+70
°C
°C
Lead Soldering Temperature
1.6 mm from Seating Plane
1200
1300
Average LED Forward
Current
If
1200
1300
Peak LED Forward Current
Ifpk
Reverse LED Input Voltage
Photodiode Bias
(Id = 100 µA max)
Fig.
260°C
for 10 sec.
10
1
1
40
50
mA
mA
1200
1300
40
75
mA
mA
Vr
1200
1300
2.5
5.0
V
V
Vd
1200
1300
20
20
V
V
-0.3
-0.3
Notes
3
2
7
7
4
4
5
5
Notes:
1. Caution: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The typical
preheat and post-cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings
and can cause it to defocus.
2. Derate Maximum Average Current linearly from 65°C by 6 mA/°C [HEDS-1300 only].
3. Non-linear effects make operation of the HEDS-1200 below 10 mA not advisable.
4. 1 KHz pulse rate, 300 mS pulse width.
5. All voltages referenced to Pin 4.
System Electrical/Optical Characteristics @ TA = 25°C
Parameter
Symbol
HEDS-
Min.
Typ.
Max.
Units
Reflected
Photocurrent
Ipr
1200
1300
150
150
280
280
650
650
nA
nA
Quality Factor
<Q>
1200
1300
0.82
0.82
0.95
0.95
1.0
1.0
Ke
1200
1300
-0.005
-0.01
1/°C
1/°C
d
1200
1300
0.13
0.19
mm
mm
Maximum Signal
Point (MSP)
Zm
1200
1300
Effective Numerical
Aperture of
Detector Lens
N.A.
1200
1300
Ipr Temperature
Coefficient
System Optical Step
Response Size (OSR)
4.01
4.01
4.27
4.27
4.62
4.52
Conditions
Notes
If = 35 mA, Vd = 0 1A, 2, 6
See Binning Table
1B, 2, 6
If = 35 mA
mm
mm
Fig.
1A
1B
6
6
6, 7
6, 7
If = 35 mA
8
8
9A
9B
Measured from
Reference Plane
4
4
0.3
0.3
Notes:
6. Measured from a reflector coated with 99% diffuse reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the
sensor’s reference plane. Measured physically is the total photocurrent, Ipt, which consists of a signal (reflected from target)
component, Ipr, and a component induced by reflections internal to the sensor (stray), Ips. Ipr = Ipt - Ips.
7. <Q> = Ipr/Ipt
8. Photocurrent variation with temperature follows a natural exponential law: Ip(T) = Ip(To)*exp[Ke(T-To)]
9. OSR size is defined as the distance for the 10%-90% “step” response of Ipr as the sensor moves over an abrupt black-white edge,
or from opaque white to free space (no reflection).
4-24
9
9
Detector Electrical/Optical Characteristics @ TA = 25°C
Parameter
Symbol
HEDS-
Min. Typ.
Max.
Units
Dark Current
Id
1200
1300
50
50
Capacitance
Cd
1200
1300
Detector Area
Ad
1200
1300
Conditions
1000
1000
pA
pA
Vd = 5 V, If = 0
Reflection = 0%
100
100
pF
pF
Vd = 0 V, If = 0
f = 1 MHz
0.16
0.16
sq-mm
sq-mm
Fig.
Notes
Fig.
Notes
Square, with length
= 0.4 mm per side
Emitter Electrical/Optical Characteristics @ TA = 25°C
Parameter
Symbol
HEDS-
Vf
1200
1300
BVR
1200
1300
∆Vf/∆T
1200
1300
Peak
Wavelength
λ
1200
1300
Emitting Area
Ae
1200
0.0062
sq-cm
0.0889 mm diameter
junction (0.0035 in.)
1300
0.0285
sq-cm
0.185 mm diameter
junction (0.0073 in.)
Forward
Voltage
Reverse Breakdown Voltage
Thermal Coefficient of Vf
Bin Table
Min.
Typ.
Max.
Units
1.48
1.6
1.7
1.8
V
V
If = 35 mA
V
V
Ir = 100 µA
mV/°C
mV/°C
If = 35 mA
nm
nm
If = 35 mA
2.5
5.0
-0.91
-1.2
805
680
820
700
835
720
Product Marking
Ipr Limits (nA)
Bin #
Min.
Max.
2
3
4
5
6
7
8
150
195
240
288
350
425
515
200
245
293
355
430
520
650
Conditions
3
3
5
5
The photocurrent binning of the
sensor is included in the 8-digit
code printed on the sensor can.
The last digit in the code represents the bin number.
ature affects LED efficiency
slightly and may cause several
percent changes in Ipr). Bin
numbers are for “reference only”
and do not constitute an absolute
guarantee.
See Figure 8 for suggestions in
the application of photocurrent
bins.
The output of all LEDs degrades
with time, depending on drive
conditions and temperature.
Test algorithm bins units to the
lowest bin number if a unit is in
the overlap region. Such units can
cross bin boundaries as temperature changes. (Ambient temper-
The entire available distribution
of parts, appropriately marked,
will be shipped. Single bin orders
cannot be supplied.
4-25
HEDS-1200 Optical System
EMITTER
0.089 mm DIA. JUNCTION
SILICON
BAFFLE
HEDS-1300 Optical System
OPTICAL
APERTURE
BAFFLE
EMITTER
0.185 mm DIA. JUNCTION
BAFFLE
EPOXY
SEAL
EPOXY
SEAL
SENSING
AREA
SENSING
AREA
GLASS
DETECTOR
0.406 mm SQUARE
GLASS
DETECTOR
0.406 mm SQUARE
LENS
LENS
REFLECTOR
REFERENCE
PLANE
Z
REFLECTOR
DP
REFERENCE
PLANE
2
+ VF 6
Z
1
LED
IF = 35 mA
8
DS
IPT
3
DS
4
IPT
DP
+ VF 6
3
LED
IF = 35 mA
nA-METER
DS
4
2
CASE, SUBSTRATE
Figure 1A. HEDS-1200 Photocurrent Test Circuit.
4-26
nA-METER
SUBSTRATE, CASE
IPT = IPR + IPS
IPS : MEASURED IN THE DARK
IPR : WITH Z = 4.27 mm
nA-METER: KEITHLEY MODEL 480
(OR EQUIVALENT)
Figure 1B. HEDS-1300 Photocurrent Test Circuit.
HEDS-1200
1.7
1.6
1.4
1.3
1.2
1.0
0.9
0.6
0.2
85 °C
0
600
700
800
900
WAVELENGTH – nm
WAVELENGTH – nm
Figure 5. Typical Spectral Distribution
of LEDs.
Figure 6. Relative Spectral Response
of HEDS-1200 and HEDS-1300
Sensors.
1.3
1.2
1.1
1.0
HEDS-1200
ONLY
1
10
100
z
0.2
1.4
1000
z
LOW-PASS FILTERING
OF AMBIENT LIGHT
CAUSED BY RED LENS
HEDS-1300
ONLY
1.5
300 H
0.4
1.7
1.6
100 H
0
600 640 680 720 760 800 840 880 920
TYP. PEAK
RESPONSIVITY
Re = 0.34 AMP/WATT
3 KHz
0.2
0.8
1.9
1.8
1 KHz
0.4
6.5
DISTANCE FROM REFERENCE PLANE
OF SENSOR – mm
Figure 4. Photocurrent Variation with
Distance.
1.0
0.6
HEDS-1300
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IFPK (MAX.) RATIO OF MAXIMUM OPERATING PEAK
IF (MAX.) CURRENT TO TEMPERATURE DERATED
MAXIMUM DC CURRENT
25 °C
0.8
70 °C
0.4
10 KHz
RESPONSE @ GIVEN WAVELENGTH
NORMALIZED TO PEAK
HEDS-1200
-40 °C
25 °C
0.6
10 µA 100 µA 1 mA 10 mA 100 mA
Figure 3. LED Forward Voltage vs.
Forward Current.
0 °C
1.0
0.8
30 KHz
LIGHT OUTPUT (NORMALIZED TO 25 °C VALUE)
1.2
HEDS-1200
IF – FORWARD CURRENT (LOG SCALE)
Figure 2. Relative Reflected
Photocurrent.
HEDS-1300
HEDS-1200
1.1
IF – LED FORWARD CURRENT – mA
1.4
HEDS-1300
1.5
0.8
1 µA
5 10 15 20 25 30 35 40 45 50
0
PHOTOCURRENT NORMALIZED
TO PEAK @ MSP
1.8
HEDS-1300
VF – FORWARD VOLTAGE – V
PHOTOCURRENT NORMALIZED
AT IF = 35 mA, TA = 25 °C
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
HEDS-1200
MSP RANGE
HEDS-1300
MSP RANGE
1.0
10,000
tP – PULSE DURATION (µs)
Figure 7. Sensor Pulse Drive
Considerations. Max Tolerable Peak
Pulse Current vs. Pulse Duration.
REFLECTOR
REFERENCE
PLANE
Z
RF
IF
IPT
DP
NOTE: FOR VO (APPROX.) 1.9 – 2.4 VOLTS
SENSOR
RECOMMENDED VALUE
BIN NUMBER
OR RF (OHMS)
+5 V
3
6
–
LED
+
DS
2
4
CASE, SUBSTRATE
VO
VO = RF x |IPT|
2
3
4
5
6
7
8
15 M
12 M
10 M
8.2 M
6.8 M
5.6 M
4.7 M
Figure 8. Sensor with Transimpedance Amplifier.
4-27
d – SYSTEM RESPONSE – mm
NORMALIZED SIGNAL
1.0
Preferred Orientation
0.8
0.6
d
10 %
0
BLACK
NON-PREFERRED ORIENTATION
0.4
0.2
PREFERRED ORIENTATION
0
2.5
3.0
3.5
4.5
4.0
5.0
5.5
DISTANCE FROM REFERENCE PLANE OF SENSOR – mm
1.0
0.8
NON-PREFERRED ORIENTATION
0.6
NORMALIZED SIGNAL
Figure 9A. HEDS-1200 System Optical Step Response Variation with Distance.
d – SYSTEM RESPONSE – mm
At maximum signal point (MSP)
and/or when the sensor is in
focus, the orientation of the
sensor is unimportant. However,
as one moves away from MSP
and/or moves out of focus (either
by distance or angle), the preferred orientation indicated above
is recommended to maintain a
higher resolution spot size.
100 % WHITE
90 %
100 % WHITE
90 %
d
10 %
0
BLACK
0.4
0.2
PREFERRED ORIENTATION
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
DISTANCE FROM REFERENCE PLANE OF SENSOR – mm
Figure 9B. HEDS-1300 System Optical Step Response Variation with Distance.
4-28
Warranty and Service
HP Optical Reflective Sensor is
warranted for a period of one year
after purchase covering defects in
material and workmanship.
Hewlett-Packard will repair or, at
its option, replace products that
prove to be defective in material
or workmanship under proper use
during the warranty period.
NO OTHER WARRANTIES ARE
EXPRESSED OR IMPLIED,
INCLUDING BUT NOT LIMITED
TO THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND
FITNESS FOR A PARTICULAR
PURPOSE. HEWLETT-PACKARD
IS NOT LIABLE FOR
CONSEQUENTIAL DAMAGES.
For additional warranty or service
information please contact your
local Hewlett-Packard sales
representative or authorized
distributor.
4-29