H High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution–0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light • TO-5 Miniature Sealed Package • Photodiode and Transistor Output • Solid State Reliability Description The HBCS-1100 is a fully integrated module designed for optical reflective sensing. The module contains a 0.178 mm (0.007 in.) diameter 700 nm visible LED emitter and a matched I.C. photodetector. A bifurcated aspheric lens is used to image the active areas of the emitter and the detector to a single spot 4.27 mm (0.168 in.) in front of the package. The reflected signal can be sensed directly from the photodiode or through an internal transistor that can be configured as a high gain amplifier. Applications Applications include pattern recognition and verification, object sizing, optical limit switching, tachometry, textile thread counting and defect detection, dimensional monitoring, line locating, mark, and bar code scanning, and paper edge detection. Mechanical Considerations The HBCS-1100 is packaged in a high profile 8 pin TO-5 metal can with a glass window. The emitter and photodetector chips are mounted on the header at the base of the package. Positioned above these active elements is a bifurcated aspheric acrylic lens that focuses them to the same point. Package Dimensions 9.40 (0.370) 8.51 (0.335) MAXIMUM SIGNAL POINT S.P. R.P. 0.86 (0.034) 0.73 (0.029) 8.33 (0.328) 7.79 (0.307) CL 5.08 (0.200) 12.0 (0.473) REFERENCE PLANE 4.27 ± 0.25 (0.168 ± 0.010) 4.11 (0.162) 1.14 (0.045) 0.73 (0.029) 15.24 (0.600) 12.70 (0.500) 5.08 (0.200) 11.50 (0.453) 11.22 (0.442) NOTES: 1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES). 2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY. 3. THE REFERENCE PLANE IS THE TOP SURFACE OF THE PACKAGE. 4. NICKEL CAN AND GOLD PLATED LEADS. 5. S.P. SEATING PLANE. 6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP. 5965-5944E 4-15 The sensor can be rigidly secured by commercially available two piece TO-5 style heat sinks, such as Thermalloy 2205, or Aavid Engineering 3215. These fixtures provide a stable reference platform and their tapped mounting holes allow for ease of affixing this assembly to the circuit board. Electrical Operation The detector section of the sensor can be connected as a single photodiode or as a photodiode transistor amplifier. When photodiode operation is desired, it is recommended that the substrate diodes be defeated by connecting the collector of the transistor to the positive potential of the power supply and shorting the base-emitter junction of the transistor. Figure 15 shows photocurrent being supplied from the anode of the photodiode to an inverting input of the operational amplifier. The circuit is recommended to improve the reflected photocurrent to stray photocurrent ratio by keeping the substrate diodes from acting as photodiodes. The cathode of the 700 nm emitter is physically and electrically connected to the casesubstrate of the device. Applications that require modulation or switching of the LED should be designed to have the cathode connected to the electrical ground of the system. This insures minimum capacitive coupling of the switching transients through the substrate diodes to the detector amplifier section. The HBCS-1100 detector also includes an NPN transistor which can be used to increase the output current of the sensor. A current feedback amplifier as shown in Figure 6 provides moderate current gain and bias point stability. Connection Diagram Schematic Diagram VD VC 3 1 3 REFLECTOR 4 2 REFERENCE PLANE 5 1 TOP VIEW ANODE VF 6 6 8 7 DS DS CATHODE 4 SUBSTRATE, CASE DS – SUBSTRATE DIODES PIN 2 VB 8 VE 1 2 3 4 5 6 7 8 FUNCTION TRANSISTOR COLLECTOR TRANSISTOR BASE, PHOTODIODE ANODE PHOTODIODE CATHODE LED CATHODE, SUBSTRATE, CASE NC LED ANODE NC TRANSISTOR EMITTER CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be introduced by ESD. 4-16 Absolute Maximum Ratings at TA = 25°C Parameter Storage Temperature Operating Temperature Lead Soldering Temperature 1.6 mm from Seating Plane Average LED Forward Current Peak LED Forward Current Reverse LED Input Voltage Package Power Dissipation Collector Output Current Supply and Output Voltage Transistor Base Current Transistor Emitter Base Voltage Symbol TS TA Min. -40 -20 Max. +75 +70 260 for 10 sec. Units °C °C °C 50 75 5 120 8 20 5 0.5 mA mA V mW mA V mA V IF IFPK VR PP IO VD, VC, VE IB VEB -0.5 Fig. Notes 11 2 1 1 3 10 System Electrical/Optical Characteristics at TA = 25°C Parameter Total Photocurrent (IPR + IPS) Reflected Photocurrent (IPR) to Internal Stray Photocurrent (IPS) Transistor DC Static Current Transfer Ratio Slew Rate Image Diameter Symbol IP IPR IPS hFE d Maximum Signal Point 50% Modulation Transfer Function Depth of Focus Effective Numerical Aperture Image Location Thermal Resistance Min. Typ. Max. Units Conditions 575 nA TA = 20°C IF = 35 mA, 150 250 375 TA = 25°C VD = VC = 5 V 80 TA = 70°C 4 8.5 IF = 35 mA, VC = VD = 5 V Fig. Note 2, 3 4 15 50 100 200 0.08 4, 5 V/µs 0.17 mm 4.01 4.27 4.52 mm MTF 2.5 Inpr/mm ∆ FWHM N.A. 1.2 mm D 0.51 mm ΘJC 85 °C/W TA = 20°C VCE = 5 V, TA = 25°C IC = 10 µA RL = 100 K, IPK = 50 mA, RF = 10 M, tON = 100 µs, Rate = 1 kHz IF = 35 mA, = 4.27 mm (0.168 in.) Measured from Reference Plane IF = 35 mA, =4.27 mm 50% of IP at = 4.27 mm 3 6 8, 10 8, 9 9 10, 11 9 5, 7 5 0.3 Diameter Reference to Centerline = 4.27 mm 6 4-17 Detector Electrical/Optical Characteristics at TA = 25°C Parameter Dark Current Capacitance Flux Responsivity Detector Area Symbol IPD CD Rφ AD Min. Typ. 5 Max. 200 10 45 0.22 0.160 Units pA nA pF A/W mm2 Conditions Fig. Note TA = 25°C IF = 0, VD = 5 V; Reflection = 0% TA = 70°C VD = 0 V, IP = 0, f = 1 MHz λ = 700 nm, VD = 5 V Square, with Length = 0.4 mm/Side 12 Emitter Electrical/Optical Characteristics at TA = 25°C Parameter Forward Voltage Reverse Breakdown Voltage Radiant Flux Peak Wavelength Thermal Resistance Temperature Coefficient of VF Symbol VF BVR φE Min. λp ΘJC ∆VF /∆T 680 5 5 Typ. 1.6 Max. 1.8 9.0 700 150 -1.2 720 Units V V µW nm °C/W mV/°C Conditions IF = 35 mA IR = 100 µA IF = 35 mA, λ = 700 nm IF = 35 mA Fig. Note 13 14 14 IF = 35 mA Transistor Electrical Characteristics at TA = 25°C Parameter Symbol Min. Typ. Max. Units Collector-Emitter Leakage ICEO 1 nA Base-Emitter Voltage VBE 0.6 V Collector-Emitter Saturation VCE(SAT) 0.4 V Voltage Collector-Base Capacitance CCB 0.3 pF Base-Emitter Capacitance CBE 0.4 pF Thermal Resistance ΘJC 200 °C/W Conditions VCE = 5 V IC = 10 µA, IB = 70 nA IB = 1 µA, IE = 10 µA Fig. Note f = 1 MHz, VCB = 5 V f = 1 MHz, VBE = 0 V Notes: 1. 300 µs pulse width, 1 kHz pulse rate. 2. Derate Maximum Average Current linearly from 65°C by 6 mA/°C. 3. Without heat sinking from TA = 65°C, derate Maximum Average Power linearly by 12 mW/°C. 4. Measured from a reflector coated with a 99% reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the reference plane. 5. Peak-to-Peak response to black and white bar patterns. 6. Center of maximum signal point image lies within a circle of diameter D relative to the center line of the package. A second emitter image (through the detector lens) is also visible. This image does not affect normal operation. 7. This measurement is made with the lens cusp parallel to the black-white transition. 8. Image size is defined as the distance for the 10%-90% response as the sensor moves over an abrupt black-white edge. 9. (+) indicates an increase in the distance from the reflector to the reference plane. 10. All voltages referenced to Pin 4. 11. CAUTION: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The typical preheat and post cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings and can cause it to defocus. 4-18 PHOTOCURRENT, IPR OR IPS (NORMALIZED AT IF = 35 mA, TA = 25 °C) 1.8 1.6 1.4 1000 z Hz 100 H 100 300 Hz 1K Hz 3K 10 z 1 H 10 K 1.0 z 1.2 H 30 K IFPK (MAX.) RATIO OF MAXIMUM OPERATING PEAK IF (MAX.) CURRENT TO TEMPERATURE DERATED MAXIMUM DC CURRENT 2.0 10,000 1.6 -20 °C 1.4 0 °C 1.2 25 °C 50 °C 1.0 70 °C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 IF – DC FORWARD CURRENT (mA) tP – PULSE DURATION (µs) Figure 2. Relative Total Photocurrent vs. LED DC Forward Current. Figure 1. Maximum Tolerable Peak Current vs. Pulse Duration. +5 V 3 REFLECTOR 1 REFERENCE PLANE IF = 35 mA ANODE VF 6 + HP 6177 DS CATHODE 4 SUBSTRATE, CASE IP = IPR + IPS DS 2 IP 8 + NANOAMPERE METER (KEITHLEY MODEL 480) NOTES: 1. IP MEASUREMENT CONDITIONS ARE: = 4.34 mm, KODAK 6080 PAINT REFLECTOR. 2. IPS MEASUREMENT CONDITIONS ARE: = A CAVITY WHOSE DEPTH IS MUCH GREATER THAN THE HBCS-1100 DEPTH OF FIELD. Figure 3. IP Test Circuit. 4-19 50 2.0 IC – COLLECTOR CURRENT (µA) hFE – DC FORWARD CURRENT GAIN (NORMALIZED AT IB = 100 nA, TA = 25 °C) 3.0 VCE = 5 V 70 °C 25 °C 1.0 -20 °C 0 10 100 1000 40 30 20 60 nA 40 nA 10 20 nA 0 10,000 IB – BASE CURRENT (nA) IB – BASE CURRENT (nA) nA TEMP = 25 °C 160 nA 140 nA 120 nA 100 80 nA 0 2 4 6 8 10 12 14 16 18 20 VCE – COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 4. Normalized Transistor DC Forward Current Gain vs. Base Current at Temperature. Figure 5. Common Emitter Collector Characteristics. VCC = 5 V RL 100 K VO REFLECTOR 3 1 RF REFERENCE PLANE IFPK = 50 mA tP = 100 µs, RATE = 1 KHz ANODE VF 6 47 Ω HP 8007 DS CATHODE 4 SUBSTRATE, CASE DS 2 8 Figure 6. Slew Rate Measurement Circuit. EMITTER DETECTOR IMAGE THROUGH EMITTER LENS MAXIMUM SIGNAL POINT DETECTOR Figure 7. Image Location. 4-20 EMITTER IMAGE THROUGH DETECTOR LENS 10 M 110 0.2 0.1 0 -0.4 -0.2 0 0.2 0.4 0.6 100 90 80 70 60 40 30 20 10 0 0.8 ∆ – DISTANCE FROM MAXIMUM SIGNAL (mm) 110 110 100 90 90 80 80 70 60 50 40 10 10 4 5 6 SPATIAL FREQUENCY (LINE PAIR/mm) Figure 11. Modulation Transfer Function. 60 50 40 30 20 10 6 5 0 10 % d -0.2 -0.1 0 0.1 0.3 0.2 ∆d – EDGE DISTANCE (mm) Figure 10. Step Edge Response. 100 40 20 3 4 50 20 2 3 60 30 1 2 70 30 0 1 70 0 -0.3 Figure 9. Reflector Distance vs. Percent Reflected Photocurrent. 100 0 0 90 % 90 80 – REFLECTOR DISTANCE (mm) % RESPONSE % AMPLITUDE MODULATION (P-P) Figure 8. Image Size vs. Maximum Signal Point. ∆ 50 100 IF – INPUT CURRENT (mA) d – IMAGE SIZE (mm) SEE NOTES 7, 8, 9 0.3 110 % – REFLECTED PHOTOCURRENT % – REFLECTED PHOTOCURRENT 0.4 70 °C 25 °C 600 700 800 900 10 1 VF 0.1 - 0.01 1.3 1000 IF + λ – WAVELENGTH (nm) 1.4 1.5 1.6 1.7 VF – FORWARD VOLTAGE (V) Figure 12. Detector Spectral Response. Figure 13. LED Forward Current vs. Forward Voltage Characteristics. VCC RELATIVE RADIANT FLUX 1.2 1.0 3 REFLECTOR 0 °C 1 R2 REFERENCE PLANE 25 °C 0.8 R1 ANODE 70 °C VF 0.6 6 IP DS 0.4 CATHODE 4 SUBSTRATE, CASE 0.2 0 640 660 680 700 720 740 DS + 2 8 – VOUT 760 λ – WAVELENGTH (nm) Figure 14. Relative Radiant Flux vs. Wavelength. VOUT = VCC – IPRF 1 + R2/R1 RF Figure 15. Photodiode Interconnection. 4-21