BYV26 Series Ultra Fast Avalanche Sinterglass Diode Features Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Applications Switched mode power supplies High-frequency inverter circuits Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) Parts Table Part Type differentiation Package BYV26A VR = 200 V; IFAV = 1 A SOD57 BYV26B VR = 400 V; IFAV = 1 A SOD57 BYV26C VR = 600 V; IFAV = 1 A SOD57 BYV26D VR = 800 V; IFAV = 1 A SOD57 BYV26E VR = 1000 V; IFAV = 1 A SOD57 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Sub type Symbol Value Unit see electrical characteristics Test condition BYV26A VR = VRRM 200 V see electrical characteristics BYV26B VR = VRRM 400 V see electrical characteristics BYV26C VR = VRRM 600 V see electrical characteristics BYV26D VR = VRRM 800 V see electrical characteristics BYV26E VR = VRRM 1000 V IFSM 30 A tp = 10 ms, half sinewave Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A, inductive load IFAV 1 A ER 10 mJ Tj = Tstg - 55 to + 175 °C BYV26 Series Ultra Fast Avalanche Sinterglass Diode Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Sub type l = 10 mm, TL = constant Symbol Value Unit RthJA 45 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Max Unit IF = 1 A Sub type Symbol VF 2.5 V IF = 1 A, Tj = 175 °C VF 1.3 V VR = VRRM IR 5 µA 100 µA VR = VRRM, Tj = 150 °C IR = 100 µA Reverse breakdown voltage Reverse recovery time Min Typ. IR BYV26A V(BR)R 300 V IR = 100 µA BYV26B V(BR)R 500 V IR = 100 µA BYV26C V(BR)R 700 V IR = 100 µA BYV26D V(BR)R 900 V IR = 100 µA BYV26E V(BR)R 1100 IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26ABYV26C trr 30 ns IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26DBYV26E trr 75 ns V 600 1000 VR=VRRM 500 RthJA=45K/W 200V 400 RthJA=100K/W 400V 300 600V 200 800V IR – Reverse Current ( mA ) PR – Maximum Reverse Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 10 1 100 VR=VRRM 1000V 0 0.1 0 95 9728 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 0 95 9729 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 2. Max. Reverse Current vs. Junction Temperature BYV26 Series Ultra Fast Avalanche Sinterglass Diode I FAV – Average Forward Current ( A ) 1.2 40 CD – Diode Capacitance ( pF ) 1.0 RthJA=45K/W 0.8 0.6 0.4 RthJA=100K/W 0.2 0 f=1MHz 35 30 BYV26C 25 20 15 10 5 0 0 40 80 120 160 200 0.1 Tamb – Ambient Temperature ( °C ) 95 9730 16380 Figure 3. Max. Average Forward Current vs. Ambient Temperature 1.0 10.0 VR – Reverse Voltage ( V ) 100.0 Figure 5. Diode Capacitance vs. Reverse Voltage 10 40 CD – Diode Capacitance ( pF ) IF – Forward Current ( A ) Tj=175°C 1 Tj=25°C 0.1 0.01 0.001 30 BYV26E 25 20 15 10 5 0 0 95 9731 f=1MHz 35 1 2 3 4 5 6 7 0.1 VF – Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage 1.0 10.0 Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g 26 min. Cathode Identification 4.2 max. 100.0 VR – Reverse Voltage ( V ) 16381 technical drawings according to DIN specifications 26 min. ∅ 0.82 max.