BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features • • • • • Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Wave and reflow solderable 15811 Applications Freewheeling diodes in SMPS and converters Snubber diodes Parts Table Part Type differentiation Package BYG 24 D VR = 200 V @ IFAV = 1.5 A DO-214AC BYG 24 G VR = 400 V @ IFAV = 1.5 A DO-214AC BYG 24 J VR = 600 V @ IFAV = 1.5 A DO-214AC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Part Symbol Value Unit BYG 24 D VR = VRRM 200 V BYG 24 G VR = VRRM 400 V BYG 24 J VR = VRRM 600 V IFSM 30 A IFAV 1.5 A Tj = Tstg - 55 to + 150 °C ER 20 mJ Symbol Value Unit RthJC 25 K/W RthJA 150 K/W RthJA 125 K/W tp = 10 ms, half-sinewave Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 25 °C Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction case Junction ambient epoxy glass hard tissue 35 µm * Part 17 mm2 cooper area per electrode epoxy glass hard tissue 35 &muMm * 50 mm2 cooper area per electrode Document Number 86067 Rev. 1.2, 19-Oct-04 www.vishay.com 1 BYG24 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Max Unit IF = 1 A VF 1.15 V IF = 1.5 A VF 1.25 V VR = VRRM IR 1 µA VR = VRRM, Tj = 100 °C IR 10 µA IR = 100 µA Breakdown voltage Reverse recovery time Part Symbol Min Typ. BYG 24 D V(BR)R 200 V BYG 24 G V(BR)R 400 V BYG 24 J V(BR)R 600 V IF = 0.5 A; IR = 1 A; iR = 0.25 A trr 140 ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100.00 RthJA= 50 VR = VRRM 125K/W I F – Forward Current ( A ) PR – Reverse Power Dissipation ( mW ) 60 10.00 155K/W 40 PR–Limit @100%VR 175K/W 30 20 PR–Limit @80%VR 10 0 25 50 75 100 125 1.00 Tj=25°C 0.10 0.01 0.0 150 Tj – Junction Temperature ( °C ) 16 Tj=150°C Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature I FAV– Average Forward Current ( A ) I R– Reverse Current ( mA ) 1.5 2.0 2.5 3.0 1.8 VR = VRRM 10 1 VR=VRRM half sinewave 1.6 1.4 RthJA= 25K/W thJAv25K/W 1.2 1.0 RthJA=125K/W 0.8 0.6 0.4 RthJA=150K/W 0.2 0.0 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 1.0 VF – Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage 100 16825 0.5 16826 0 16827 20 40 60 80 100 120 140 160 Tamb – Ambient Temperature ( °C ) Figure 4. Average Forward Current vs. Ambient Temperature Document Number 86067 Rev. 1.2, 19-Oct-04 BYG24 Vishay Semiconductors C D – Diode Capacitance ( pF ) 30 f=1MHz 25 20 15 10 5 0 0.1 16828 1.0 10.0 VR – Reverse Voltage ( V ) 100.0 Figure 5. Diode Capacitance vs. Reverse Voltage Dimensions in inches (millimeters) 5.3 +0.2 / -0.4 4.4 +0.1 / -0.2 ISO Method E 0.2 2.15 ± 0.15 technical drawings according to DIN specifications 0.1 ± 0.07 1.5 +0.2 / -0.1 2.6 +0.2 / -0.3 3 +0.3 / -0.5 Plastic case JEDEC DO 214 similar to SMA Cathode indicated by a band 14275-1 Document Number 86067 Rev. 1.2, 19-Oct-04 www.vishay.com 3