MBR3545 thru MBR35100R Naina Semiconductor Ltd. Schottky Power Diode, 35A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Test Conditions Parameter Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit Repetitive peak reverse voltage VRRM 45 60 80 100 V RMS reverse voltage VRMS 32 42 57 70 V VDC 45 60 80 100 V TC ≤ 110 C IF 35 35 35 35 A TC = 25oC IFSM 600 600 600 600 A VF 0.68 0.75 0.84 0.84 V 1.5 1.5 1.5 1.5 DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave o IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC Forward voltage Reverse current IR mA 25 25 25 25 MBR3560(R) MBR3580(R) MBR35100(R) Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature MBR3545(R) Unit o Rth(JC) 1.5 TJ Tstg -55 to 150 -55 to 175 C/ W o C o C Mounting torque (non-lubricated threads) F 2.0 Nm Approximate allowable weight W 5.0 g 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com Naina Semiconductor Ltd. MBR3545 thru MBR35100R Package Outline ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com