MBR3545 thru MBR35100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF = 35 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR3545(R)
MBR3560(R)
MBR3580(R) MBR35100(R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
57
70
V
DC blocking voltage
VDC
100
V
45
60
80
Continuous forward current
IF
TC ≤ 110 °C
35
35
35
35
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
600
600
600
600
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
VF
Reverse current
IR
MBR3580(R) MBR35100(R)
Conditions
MBR3545(R)
MBR3560(R)
IF = 35 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.68
1.5
25
0.75
1.5
25
0.84
1.5
25
0.84
1.5
25
1.5
1.5
1.5
1.5
Symbol
Unit
V
mA
Thermal characteristics
Thermal resistance, junction case
RthJC
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1
°C/W
MBR3545 thru MBR35100R
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MBR3545 thru MBR35100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 4 (DO-203AA)
M
J
P
D
B
G
N
C
E
F
A
Inches
Min
Millimeters
Max
A
Min
Max
10-32 UNF
B
0.424
0.437
10.77
11.10
C
-----
0.505
-----
12.82
D
------
0.800
-----
20.30
E
0.453
0.492
11.50
12.50
F
0.114
0.140
2.90
3.50
G
-----
0.405
-----
10.29
J
-----
0.216
-----
5.50
M
-----
φ0.302
-----
φ7.68
N
0.031
0.045
0.80
1.15
P
0.070
0.79
1.80
2.00
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