Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT Silicon Pin Photodiode with Daylight Filter; in SMT Lead (Pb) Free Product - RoHS Compliant BP 104 F BP 104 FS BP 104 F BP 104 FS Wesentliche Merkmale Features • • • • • • • • Speziell geeignet für Anwendungen bei 950 nm Kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BP 104 FS: geeignet für Vapor-Phase Löten und IR-Reflow Löten Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen Applications • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern, Gerätefernsteuerungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment • Photointerrupters Typ Type Bestellnummer Ordering Code BP 104 F Q62702-P0084 BP 104 FS Q62702-P2627 2005-03-14 1 BP 104 F, BP 104 FS Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 ° C Total power dissipation Ptot 150 mW Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 IP 34 (≥ 25) µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λ S max 950 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax λ 800 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 4.84 mm2 2.20 × 2.20 mm × mm Kennwerte (TA = 25 ° C, λ = 950 nm) Characteristics Abmessung der bestrahlungsempfindlichen Fläche L × B Dimensions of radiant sensitive area L× W Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sλ 0.70 A/W Quantenausbeute Quantum yield η 0.90 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 (≥ 250) mV 2005-03-14 2 BP 104 F, BP 104 FS Kennwerte (TA = 25 ° C, λ = 950 nm) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlussstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 17 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA t r , tf 20 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 × 10–14 Nachweisgrenze, VR = 10 V Detection limit D* 6.1 × 1012 2005-03-14 3 W -----------Hz cm × Hz --------------------------W BP 104 F, BP 104 FS Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) Relative Spectral Sensitivity Srel = f (λ) OHF00368 100 ΙP S rel % 80 OHF01056 10 3 µA 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 10 2 40 Total Power Dissipation Ptot = f (TA) ΙP 80 60 10 0 10 1 40 20 20 0 700 10 800 900 1000 nm λ -1 10 0 1200 10 1 10 10 4 µW/cm2 10 2 0 Dark Current Capacitance C = f (VR), f = 1 MHz, E = 0 IR = f (VR), E = 0 OHFD1781 4000 0 0 20 40 60 Ee pA C ΙR Dark Current IR = f (TA), VR = 10 V, E = 0 OHF01778 60 80 ˚C 100 TA OHF00082 10 3 Ι R nA pF 50 10 2 3000 40 10 1 30 2000 20 10 0 1000 10 0 5 0 10 0 -2 10 V 20 15 10 -1 10 0 10 1 V 10 2 VR VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2005-03-14 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 ˚C 100 TA BP 104 F, BP 104 FS Maßzeichnung Package Outlines 5.4 (0.213) 4.9 (0.193) 0.3 (0.012) 0.8 (0.031) 0.8 (0.031) 0.6 (0.024) Chip position 4.5 (0.177) 4.3 (0.169) 0.35 (0.014) 0.2 (0.008) 0.6 (0.024) 0.4 (0.016) 0 ... 5˚ 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 3.5 (0.138) 3.0 (0.118) 0.7 (0.028) 0.6 (0.024) 0.4 (0.016) 0.5 (0.020) 4.0 (0.157) 3.7 (0.146) 1.2 (0.047) 0.6 (0.024) 0.4 (0.016) Cathode marking 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) BP 104 F 5.08 (0.200) spacing Photosensitive area 2.20 (0.087) x 2.20 (0.087) Approx. weight 0.1 g GEOY6075 Chip position 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 ˚ 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) BP 104 FS 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2005-03-14 5 BP 104 F, BP 104 FS Lötbedingungen Soldering Conditions BP 104 FS Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C T (nach J-STD-020B) (acc. to J-STD-020B) 255 ˚C 240 ˚C 250 ˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C 217 ˚C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 ˚C 0 0 50 100 150 200 250 s 300 t Wellenlöten (TTW) TTW Soldering BP 104 F OHLY0598 300 C T (nach CECC 00802) (acc. to CECC 00802) 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 t 2005-03-14 6 s 250 BP 104 F, BP 104 FS Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2005-03-14 7