GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • SMT package with IR emitter (880 nm) and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter und detector can be controlled separately Anwendungen Applications • Datenübertragung • Wegfahrsperre • Infrarotschnittstelle • Data transmission • Lock bar • Infrared interface Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 7221 Q65110A2741 SMT Multi TOPLED® 2009-03-05 1 SFH 7221 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value IRED Einheit Unit Transistor Betriebstemperatur Operating temperature range Top – 40 ... + 100 – 40 ... + 100 °C Lagertemperatur Storage temperature range Tstg – 40 ... + 100 – 40 ... + 100 °C Sperrschichttemperatur Junction temperature Tj + 100 + 100 °C Durchlassstrom (LED) Forward current (LED) IF 100 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC – 15 mA Stoßstrom Surge current t ≤ 10 μs, D = 0.005 IFM 2500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 – V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE – 35 V Verlustleistung Total power dissipation Ptot 180 165 mW Rth JA 500 450 K/W Rth JS 400 – K/W Wärmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint 1) PC-board: G30/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten für einen Chip. The stated maximum ratings refer to one chip. 2009-03-05 2 SFH 7221 Kennwerte IRED (TA = 25 °C) Characteristics IRED Bezeichnung Parameter Symbol Symbol Wellenlänge der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms λpeak Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Δλ Spectral bandwidth at 50% of Imax, IF = 100 mA Wert Value Einheit Unit 880 nm 80 nm Abstrahlwinkel Viewing angle ϕ ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimensions of active chip area L×B L×W 0.3 × 0.3 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90 % and from 90% to 10% IF = 100 mA, RL = 50 Ω tr , tf 0.5 μs Kapazität Capacitance VR = 0 V, f = 1 MHz Co 15 pF VF VF 1.5 (≤ 1.8) 3.0 (≤ 3.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) μA Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Φe 23 mW Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie bzw. Φe IF = 100 mA, IF = 100 mA TCI – 0.5 %/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs 2009-03-05 3 SFH 7221 Kennwerte IRED (TA = 25 °C) Characteristics IRED (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 100 mA TCλ + 0.25 nm/K Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie >4 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs Ie typ. 48 mW/sr IRED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 2009-03-05 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 4 120˚ SFH 7221 Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 990 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 440 … 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 μm) Radiant sensitive area (∅ 240 μm) A 0.038 mm2 Abmessung der Chipfläche Dimensions of chip area L×B 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 … 0.7 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 μA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr , tf 7 μs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 μA, Ee = 0.1 mW/cm2 VCEsat 150 mV 2009-03-05 5 SFH 7221 IRED Forward Current IF = f (VF) TA = 25 °C OHR00881 10 1 ΙF Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 °C OHR00878 10 2 Ιe Ι e (100mA) A Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25 °C OHR00886 10 4 mA ΙF D = 0.005 0.01 0.02 0.05 10 1 10 0 10 10 3 0.1 0.2 0 10 -1 0.5 10 -1 10 2 10 DC -2 10 -2 D= 10 -3 10 -3 0 1 2 3 4 5 6 V VF 8 Max. Permissible Forward Current IF = f (TA) Ι F mA 100 10 0 10 1 10 2 ΙF 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 3 mA 10 4 ΙF IF % 10 1 s 10 2 tp Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 85 °C OHR00877 100 Ι rel tp T Relative Spectral Emission Irel = f (λ) OHR00883 120 tp T OHF02621 104 mA t D = TP tP IF T 80 D= 103 80 R thjA = 450 K/W 0.005 0.01 0.02 0.05 0.1 60 60 40 102 40 0.2 0.5 20 20 0 0 20 2009-03-05 40 60 80 100 ˚C 120 TA 0 750 1 101 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 800 850 6 900 950 nm 1000 λ tp SFH 7221 Phototransistor Photocurrent IPCE = f (VCE), Ee = Parameter Rel. Spectral Sensitivity Srel = f (λ) Srel OHF00207 100 % Dark Current ICEO = f (VCE), E = 0 OHF01529 10 0 mA Ι PCE 80 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 70 60 Ι CEO 10 0 10 -1 10 -1 50 OHF01527 10 1 nA mW 0.1 2 cm 40 30 10 -2 20 10 0 400 500 600 700 800 900 nm 1100 10 -2 λ Total Power Dissipation Ptot = f (TA) 10 15 20 25 30 V 35 V CE C CE pF 160 4.0 10 -3 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25° = f (TA), VCE = 5 V OHF01528 5.0 mW P tot 5 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF00871 200 0 Ι PCE OHF01524 1.6 Ι PCE 25 1.4 1.2 3.5 120 1.0 3.0 2.5 80 0.8 2.0 0.6 1.5 0.4 40 1.0 0.2 0.5 0 0 20 40 60 Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA 0 10 -2 80 ˚C 100 TA Ι CEO 10 1 V 10 2 V CE OHF00312 10 3 μA Ι PCE 10 2 10 1 10 1 10 0 10 0 2009-03-05 10 0 Photocurrent IPCE = f (Ee), VCE = 5 V 10 2 10 -1 -25 10 -1 0 25 50 75 ˚C 100 TA 10 -1 10 -3 10 -2 m W/cm 2 10 0 Ee 7 0 -25 0 25 50 75 C 100 TA SFH 7221 Maßzeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1.7 (0.067) 2.1 (0.083) C A E 1 0.1 (0.004) typ 4 Package marking 0.5 (0.020) C 3.7 (0.146) 3.3 (0.130) 3 1.1 (0.043) 3.4 (0.134) 3.0 (0.118) 2 0.9 (0.035) 0.7 (0.028) (2.4 (0.094)) 0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6965 Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Recommended Solder Pad Reflow Löten Reflow Soldering 3.3 (0.130) 3.3 (0.130) 0.4 (0.016) 2.6 (0.102) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Kathoden Markierung / Cathode marking 7.5 (0.295) 0.5 (0.020) 1.5 (0.059) 4.5 (0.177) 1.1 (0.043) Cu Fläche / <_ 12 mm 2 per pad Cu-area Lötstoplack Solder resist OHLPY439 2009-03-05 8 SFH 7221 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C 255 ˚C 240 ˚C T 250 ˚C 260 ˚C +0 -5 ˚C ±5 245 ˚C ˚C ˚C 235 ˚C +5 -0 ˚C 217 ˚C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 ˚C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-03-05 9 Mouser Electronics Related Product Links 720-SFH7221-Z - Osram Opto Semiconductor SFH 7221-Z