OSRAM SFH7221_12

GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 7221
Wesentliche Merkmale
Features
• SMT-Gehäuse mit IR-Sender (880 nm) und
Si-Fototransistor
• Geeignet für SMT-Bestückung
• Gegurtet lieferbar
• Sender und Empfänger getrennt ansteuerbar
• SMT package with IR emitter (880 nm) and
Si-phototransistor
• Suitable for SMT assembly
• Available on tape and reel
• Emitter und detector can be controlled
separately
Anwendungen
Applications
• Datenübertragung
• Wegfahrsperre
• Infrarotschnittstelle
• Data transmission
• Lock bar
• Infrared interface
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 7221
Q65110A2741
SMT Multi TOPLED®
2009-03-05
1
SFH 7221
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
IRED
Einheit
Unit
Transistor
Betriebstemperatur
Operating temperature range
Top
– 40 ... + 100 – 40 ... + 100 °C
Lagertemperatur
Storage temperature range
Tstg
– 40 ... + 100 – 40 ... + 100 °C
Sperrschichttemperatur
Junction temperature
Tj
+ 100
+ 100
°C
Durchlassstrom (LED)
Forward current (LED)
IF
100
–
mA
Kollektorstrom (Transistor)
Collector current (Transistor)
IC
–
15
mA
Stoßstrom
Surge current
t ≤ 10 μs, D = 0.005
IFM
2500
75
mA
Sperrspannung (LED)
Reverse voltage (LED)
VR
5
–
V
Kollektor-Emitter Spannung
(Transistor)
Collector-emitter voltage
(Transistor)
VCE
–
35
V
Verlustleistung
Total power dissipation
Ptot
180
165
mW
Rth JA
500
450
K/W
Rth JS
400
–
K/W
Wärmewiderstand Sperrschicht / Umgebung
Thermal resistance junction / ambient
Montage auf PC-Board1) (Padgröße ≥ 16 mm2)
mounting on pcb1) (pad size ≥ 16 mm2)
Sperrschicht / Lötstelle
junction / soldering joint
1)
PC-board: G30/FR4
Hinweis / Notes
Die angegebenen Grenzdaten gelten für einen Chip.
The stated maximum ratings refer to one chip.
2009-03-05
2
SFH 7221
Kennwerte IRED (TA = 25 °C)
Characteristics IRED
Bezeichnung
Parameter
Symbol
Symbol
Wellenlänge der Strahlung
Wavelength of radiation
IF = 100 mA, tp = 20 ms
λpeak
Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Δλ
Spectral bandwidth at 50% of Imax, IF = 100 mA
Wert
Value
Einheit
Unit
880
nm
80
nm
Abstrahlwinkel
Viewing angle
ϕ
± 60
Grad
deg.
Aktive Chipfläche
Active chip area
A
0.09
mm2
Abmessungen der aktiven Chipfläche
Dimensions of active chip area
L×B
L×W
0.3 × 0.3
mm²
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10% Switching times, Ie from 10% to 90 % and from
90% to 10%
IF = 100 mA, RL = 50 Ω
tr , tf
0.5
μs
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co
15
pF
VF
VF
1.5 (≤ 1.8)
3.0 (≤ 3.8)
V
V
Sperrstrom
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
μA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
23
mW
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie bzw. Φe
IF = 100 mA, IF = 100 mA
TCI
– 0.5
%/K
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
2009-03-05
3
SFH 7221
Kennwerte IRED (TA = 25 °C)
Characteristics IRED (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 100 mA
TCV
–2
mV/K
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 100 mA
TCλ
+ 0.25
nm/K
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
>4
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 μs
Ie typ.
48
mW/sr
IRED Radiation Characteristics Irel = f (ϕ)
Phototransistor Directional Characteristics Srel = f (ϕ)
40˚
30˚
20˚
10˚
0˚
ϕ
50˚
OHL01660
1.0
0.8
0.6
60˚
0.4
70˚
0.2
80˚
0
90˚
100˚
1.0
0.8
2009-03-05
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
4
120˚
SFH 7221
Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm)
Characteristics Phototransistor
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
990
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ
440 … 1150
nm
Bestrahlungsempfindliche Fläche (∅ 240 μm)
Radiant sensitive area (∅ 240 μm)
A
0.038
mm2
Abmessung der Chipfläche
Dimensions of chip area
L×B
0.45 × 0.45
mm × mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
H
0.5 … 0.7
mm
Halbwinkel
Half angle
ϕ
± 60
Grad
deg.
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
CCE
5.0
pF
Dunkelstrom
Dark current
VCE = 25 V, E = 0
ICEO
1 (≤ 200)
nA
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
IPCE
≥ 16
μA
Anstiegszeit/Abfallzeit
Rise time/Fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr , tf
7
μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 5 μA, Ee = 0.1 mW/cm2
VCEsat
150
mV
2009-03-05
5
SFH 7221
IRED
Forward Current IF = f (VF)
TA = 25 °C
OHR00881
10 1
ΙF
Rel Luminous Intensity
IV / IV (10 mA) = f (IF), TA = 25 °C
OHR00878
10 2
Ιe
Ι e (100mA)
A
Perm. Pulse Handling Capability
IF = f (tp), Duty cycle D = parameter,
TA = 25 °C
OHR00886
10 4
mA
ΙF
D = 0.005
0.01
0.02
0.05
10 1
10 0
10
10 3 0.1
0.2
0
10 -1
0.5
10 -1
10 2
10
DC
-2
10 -2
D=
10 -3
10 -3
0
1
2
3
4
5
6
V
VF
8
Max. Permissible Forward Current
IF = f (TA)
Ι F mA
100
10 0
10 1
10 2
ΙF
10 1 -5
10 10 -4 10 -3 10 -2 10 -1 10 0
10 3 mA 10 4
ΙF
IF
%
10 1 s 10 2
tp
Perm. Pulse Handling Capability
IF = f (tp), Duty cycle D = parameter,
TA = 85 °C
OHR00877
100
Ι rel
tp
T
Relative Spectral Emission
Irel = f (λ)
OHR00883
120
tp
T
OHF02621
104
mA
t
D = TP
tP
IF
T
80
D=
103
80
R thjA = 450 K/W
0.005
0.01
0.02
0.05
0.1
60
60
40
102
40
0.2
0.5
20
20
0
0
20
2009-03-05
40
60
80
100 ˚C 120
TA
0
750
1
101 -5
10 10-4 10-3 10-2 10-1 100 101 s 102
800
850
6
900
950 nm 1000
λ
tp
SFH 7221
Phototransistor
Photocurrent IPCE = f (VCE),
Ee = Parameter
Rel. Spectral Sensitivity
Srel = f (λ)
Srel
OHF00207
100
%
Dark Current
ICEO = f (VCE), E = 0
OHF01529
10 0
mA
Ι PCE
80
1
mW
cm 2
0.5
mW
cm 2
0.25
mW
cm 2
70
60
Ι CEO
10 0
10 -1
10 -1
50
OHF01527
10 1
nA
mW
0.1 2
cm
40
30
10 -2
20
10
0
400 500 600 700 800 900
nm 1100
10 -2
λ
Total Power Dissipation
Ptot = f (TA)
10
15
20
25
30 V 35
V CE
C CE pF
160
4.0
10 -3
0
5
10
15
20
25
30 V 35
V CE
Photocurrent IPCE/IPCE25° = f (TA),
VCE = 5 V
OHF01528
5.0
mW
P tot
5
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
OHF00871
200
0
Ι PCE
OHF01524
1.6
Ι PCE 25
1.4
1.2
3.5
120
1.0
3.0
2.5
80
0.8
2.0
0.6
1.5
0.4
40
1.0
0.2
0.5
0
0
20
40
60
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
OHF01530
10 3
nA
0
10 -2
80 ˚C 100
TA
Ι CEO
10 1 V 10 2
V CE
OHF00312
10 3
μA
Ι PCE
10 2
10 1
10 1
10 0
10 0
2009-03-05
10 0
Photocurrent
IPCE = f (Ee), VCE = 5 V
10 2
10 -1
-25
10 -1
0
25
50
75 ˚C 100
TA
10 -1
10 -3
10 -2
m W/cm 2
10 0
Ee
7
0
-25
0
25
50
75 C 100
TA
SFH 7221
Maßzeichnung
Package Outlines
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
1.7 (0.067)
2.1 (0.083)
C
A
E
1
0.1 (0.004) typ
4
Package marking
0.5 (0.020)
C
3.7 (0.146)
3.3 (0.130)
3
1.1 (0.043)
3.4 (0.134)
3.0 (0.118)
2
0.9 (0.035)
0.7 (0.028)
(2.4 (0.094))
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
0.18 (0.007)
0.12 (0.005)
GPLY6965
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign
Recommended Solder Pad
Reflow Löten
Reflow Soldering
3.3 (0.130)
3.3 (0.130)
0.4 (0.016)
2.6 (0.102)
Padgeometrie für
verbesserte Wärmeableitung
Paddesign for
improved heat dissipation
Kathoden Markierung /
Cathode marking
7.5 (0.295)
0.5 (0.020)
1.5 (0.059)
4.5 (0.177)
1.1 (0.043)
Cu Fläche / <_ 12 mm 2 per pad
Cu-area
Lötstoplack
Solder resist
OHLPY439
2009-03-05
8
SFH 7221
Lötbedingungen
Soldering Conditions
Reflow Lötprofil für bleifreies Löten
Reflow Soldering Profile for lead free soldering
Vorbehandlung nach JEDEC Level 2
Preconditioning acc. to JEDEC Level 2
(nach J-STD-020C)
(acc. to J-STD-020C)
OHLA0687
300
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
˚C
255 ˚C
240 ˚C
T 250
˚C
260 ˚C +0
-5 ˚C
±5
245 ˚C ˚C
˚C
235 ˚C +5
-0 ˚C
217 ˚C
10 s min
200
30 s max
Ramp Down
6 K/s (max)
150
100 s max
120 s max
100
Ramp Up
3 K/s (max)
50
25 ˚C
0
0
50
100
150
200
250
s
300
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2009-03-05
9
Mouser Electronics
Related Product Links
720-SFH7221-Z - Osram Opto Semiconductor SFH 7221-Z