VTP Process Photodiodes VTP4085, 4085S PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP4085 SYMBOL CHARACTERISTIC UNITS Min. ISC VTP4085S TEST CONDITIONS Typ. Max. Min. Typ. Max. Short Circuit Current H = 100 fc, 2850 200 200 µA ISC Temperature Coefficient 2850 K .20 .20 %/°C ISC Short Circuit Current 100 µW/cm2, 940 nm 15 µA VOC Open Circuit Voltage H = 100 fc, 2850 K .33 .33 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 100 V TC ISC TC VOC ID RSH TC RSH CJ 11.4 15 11.4 100 15 50 nA Shunt Resistance H = 0, V = 10 mV 2.0 4.0 MΩ RSH Temperature Coefficient H = 0, V = 10 mV -11 -11 %/°C Junction Capacitance H = 0, V = 0 V λrange Spectral Application Range λp Spectral Response - Peak SR Sensitivity .35 400 @ Peak PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA .35 1100 400 nF 1100 nm 925 925 nm .55 .55 A/W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 55