RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth RF IN Pin 2,3 RF OUT / VDS Pin 6,7 Input Internally Matched to 50 GND BASE 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB Power Added Efficiency 60% -40°C to 85°C Operating Temperature Large Signal Models Available Applications Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test Instrumentation Civilian and Military Radar Functional Block Diagram Product Description The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Ordering Information RFHA1006S2 RFHA1006SB RFHA1006SQ RFHA1006SR RFHA1006TR7 RFHA1006PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 100 Pieces on 7” short reel 750 Pieces on 7” reel Fully assembled evaluation board 225MHz to 1215MHz; 28V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 11 RFHA1006 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 10 mA Operational Voltage 32 V 30 dBm RF- Input Power Ruggedness (VSWR) 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours 6 °C/W Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Specification Typ. Max. 28 32 V -3 -2 V RF Input Power (PIN) 28 dBm Input Source VSWR 10:1 Parameter Min. Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -5 Drain Bias Current 88 mA RF Performance Characteristics Frequency Range 225 1215 MHz Small signal 3dB bandwidth Linear Gain 16 dB POUT = 30dBm Power Gain 14 dB POUT = 39.5dBm 3 dB POUT = 30dBm, 225MHz to 1215MHz -0.02 dB/°C Gain Flatness Gain Variation with Temperature Input Return Loss (S11) Output Power Power Added Efficiency (PAE) 2 of 11 -11 dB 39.5 dBm 225MHz to 1215MHz 60 % 225MHz to 1215MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1006 Parameter Min. Specification Typ. Max. Unit RF Functional Tests [1], [2] VGS(Q) Gain Power Gain 14.8 -3.2 V 16.6 dB PIN = 10dBm, 300MHz 15.4 dB PIN = 24dBm, 300MHz Input Return Loss -10 Output Power Power Added Efficiency (PAE) 39.4 55 Gain Power Gain 14 % 15 dB PIN = 10dBm, 1100MHz 14.5 dB PIN = 25dBm, 1100MHz -9 Output Power 48 dB dBm 62.5 Input Return Loss Power Added Efficiency (PAE) Condition dB 39.5 dBm 53 % [1] Test Conditions: VDSQ = 28V, IDQ = 88mA, CW, T = 25ºC. [2] Performance in a standard tuned test fixture. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 11 RFHA1006 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) Gain versus Frequency, Pin = 25dBm Small Signal s-parameters versus Frequency (CW , VD = 28V, IDQ = 88mA) 0 17 15 -3 16 12 -6 9 -9 6 -12 S21 S11 S22 Gain (dB) 15 1250 1200 1150 14 13 12 -15 1100 950 900 850 800 750 700 650 600 550 500 450 400 350 300 250 200 0 1000 3 Magnitude, S11, S22 (dB) 18 1050 Magnitude, S21 (dB) (VD = 28V, IDQ = 88mA) 85°C 25°C -40°C 11 10 -18 200 400 600 Frequency (MHz) 800 1000 Frequency (MHz) 1400 Input Return Loss versus Frequency, Pin = 25dBm PAE versus Frequency, Pin = 25dBm (CW, VD = 28V, IDQ = 88mA) (CW, VD = 28V, IDQ = 88mA) -6 70 65 85°C 25°C -40°C -8 60 IRL, Input Return Loss (dB) Power Added Efficiency, PAE (%) 1200 55 50 45 40 35 85°C 25°C -40°C 30 -10 -12 -14 25 -16 20 1200 200 1400 400 600 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 4 of 11 -18 40 35 30 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1300 -15 1200 Gain IRL 45 1100 -12 1000 6 50 500 -9 55 400 9 60 300 -6 200 12 65 100 -3 Power Added Efficiency, PAE (%) 15 70 Input Return Loss (dB) Gain (dB) 0 Frequency (MHz) 1400 (CW, VD = 28V, IDQ = 88mA) (CW, VD = 28V, IDQ = 88mA) 0 1200 PAE versus Frequency, POUT = 39.5dBm Gain/IRL versus Frequency, POUT = 39.5dBm 18 3 800 1000 Frequency (MHz) 900 800 1000 Frequency (MHz) 800 600 700 400 600 200 DS120418 RFHA1006 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) Gain versus Frequency Power Added Efficiency versus Frequency (CW, VD = 28V, IDQ = 88mA) (CW, VD = 28V, IDQ = 88mA) 80 20 =40dBm PPout OUT =39.5dBm PPout OUT =30dBm PPout OUT 70 Power Added Efficiency, PAE (%) 16 8 =40dBm PPout OUT PPout OUT =39.5dBm PPout OUT =30dBm 4 40 30 20 10 1300 1200 1100 1000 900 800 700 (CW, VD = 28V, IDQ = 88mA) 19 0 18 PPout OUT =40dBm PPout OUT =39.5dBm PPout OUT =30dBm -3 17 16 -6 Gain (dB) Input Return Loss, IRL (dB) 600 Gain versus Output Power (CW, VD = 28V, IDQ = 88mA) -9 -12 15 14 13 freq=300MHz freq=800MHz freq=1100MHz 12 -15 10 1300 1200 1100 1000 Frequency (MHz) 900 800 700 600 500 400 300 200 100 11 22 Power Added Efficiency versus Output Power 25 28 31 34 POUT, Output Power (dBm) 37 40 Input Return Loss versus Output Power (CW, VD = 28V, IDQ = 88mA) (CW, VD = 28V, IDQ = 88mA) 0 70 freq=300MHz freq=800MHz freq=1100MHz freq=300MHz freq=800MHz freq=1100MHz -3 Input Return Loss, IRL (dB) 60 Power Added Efficiency, PAE (%) 500 Frequency (MHz) Input Return Loss versus Frequency -18 400 300 100 1300 1200 1100 Frequency (MHz) 1000 900 800 700 600 500 400 300 200 0 100 0 50 200 Gain (dB) 12 60 50 40 30 20 -6 -9 -12 -15 10 0 -18 22 DS120418 25 28 31 34 POUT, Output Power (dBm) 37 40 22 25 28 31 34 POUT, Output Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 37 40 5 of 11 RFHA1006 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz to 1215MHz (T = 25°C, unless noted) IMD3 versus Output Power (2-Tone 1MHz Separaon, VD = 28V, IDQ varied, fc = 1100MHz) IMD3, Intermodulaon Distoron (dBc) -10 -15 -20 -25 -30 -35 44mA 88mA 132mA 176mA 220mA -40 -45 -50 -55 1 10 100 Pout, Output Power (W-PEP) Gain versus Output Power (2-Tone 1MHz Separaon, VD = 28V, IDQ varied, fc = 1100MHz) 17.5 17 16.5 Gain (dB) 16 15.5 15 44mA 88mA 132mA 176mA 220mA 14.5 14 13.5 13 1 10 100 Pout, Output Power (W-PEP) 6 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1006 Package Drawing (All dimensions in mm.) Pin Names and Descriptions Pin 1 2 3 4 5 6 7 8 Backside DS120418 Name Description Gate DC Bias pin VGS RF Input RF IN RF Input RF IN No Connect N/C No Connect N/C RF OUT/VDS RF Output/Drain DC Bias pin RF OUT/VDS RF Output/Drain DC Bias pin No Connect N/C Ground GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 11 RFHA1006 Bias Instruction for RFHA1006 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase VG until drain current reaches 88mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses. 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1006 Evaluation Board Schematic Evaluation Board Bill of Materials (BOM) Component Value Manufacturer Part Number C1, C2 C11 C15 C20 C25 R11 L20 L21 C21, R21 2400pF 10000pF 10F 3.3pF 4.7F 47nH 3.85nH 82nH NOT USED Dielectric Labs Inc Murata Electronics Murata Electronics ATC Murata Electronics Murata Electronics Coilcraft Coilcraft - C08BL242X-5UN-X0 GRM188R71H103KA01D GRM21BF51C106ZE15L 100A3R3BW150XC GRM55ER72A475KA01L LQG11A47NJ00 0906-4KLB 1008HQ-82NXGLC - DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 11 RFHA1006 Evaluation Board Layout Device Impedances Frequency (MHz) RFHA1006PCBA-410 (225MHz to 1215MHz) Z Source () Z Load () 225MHz 40.4 + j3.4 40.6 + j14.1 300MHz 41.5 + j4.6 42.8 + j9.3 400MHz 42.8 + j5.5 42.7 + j5.8 950MHz 50.8 + j1.4 24.5 + j11.9 1100MHz 50.1 - j1.4 21.1 + j21.0 1215MHz 49 - j 2.8 19.8 + j27.6 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120418 RFHA1006 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. DS120418 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 11