RICHTEK RT8023

RT8023
1.2MHz 1.5A Synchronous Step-Down Converter
with Two LDOs
General Description
Features
The RT8023 combines two low dropout (LDO) linear
regulators and a step-down converter with an input voltage
range of 2.6V to 5.5V. Each output voltage is adjustable
from 0.8V to 5V. With independent Enable and PowerGood pins for each regulator, it is easy to control the power
up sequence, which is important in some applications.
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Converter Input Voltage Range : 2.6V to 5.5V,
LDO Input Voltage Range : 2.4V to 5.5V
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Low-Noise LDO for RF Application
Ultra-Fast Response in Line/Load Transient
LDO Turn-On Time Less Than 40us
Only 1μ
μ F LDO Output Capacitor Required for
Stability
Current Limiting Protection
1.5A, High Efficiency Step-Down Converter
1.2MHZ Constant Switching Frequency
Low RDS(ON) Internal Switches
No Schottky Diode Required
0.8V Reference Allows Low Output Voltage
Low Dropout Operation : 100% Duty Cycle
Internally Compensated
< 2μ
μA Shutdown Current
Power Good Output Voltage Monitor
Internal Soft-Start for PWM Converter
Easy Power Sequence Control
Over Temperature Protection
Short Circuit Protection
Thermally Enhanced 24-Lead WQFN Package
RoHS Compliant and 100% Lead (Pb)-Free
The LDO has an independent input and is capable of
delivering up to 700mA(LDO1) and 350mA(LDO2) output
currents with ultra-low dropout. The LDO has high PSRR
and can work with low-ESR space saving ceramic
capacitors. All these make it Ideal for portable RF and
wireless applications with demanding performance and
space requirements. Other features include high output
accuracy, current limiting protection, and 40μs fast turnon time.
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The step-down converter is a 1.2MHz PWM, current mode
converter. Its high switching frequency allows the use of
tiny, low cost capacitors and inductors 2mm or less in
height. Internal power switches with low on-resistance
increase efficiency and eliminate the need for external
Schottky diodes. The converter can run at 100% duty cycle
for low dropout operation that extends battery life in
portable systems.
Ordering Information
RT8023
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Applications
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Package Type
QW : WQFN-24L 4x4 (W-Type)
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Lead Plating System
P : Pb Free
G : Green (Halogen Free and Pb Free)
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Portable Instruments
Microprocessors and DSP Core Supplies
Cellular Phones
Wireless and DSL Modems
PC Cards
Digital Cameras
Note :
Richtek products are :
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RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
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Suitable for use in SnPb or Pb-free soldering processes.
DS8023-03 March 2011
Marking Information
For marking information, contact our sales representative
directly or through a Richtek distributor located in your
area.
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1
RT8023
Pin Configurations
VOUT3
AGND
23
NC
FB1
24
VIN3
EN1
(TOP VIEW)
22
21
20
19
PGOOD1
1
18
FB3
VDD1
2
17
PGOOD3
VIN1
3
16
EN3
VIN1
4
15
EN2
VIN1
5
14
PGOOD2
13
FB2
PGND
PGND
25
NC
11
12
VIN2
10
VOUT2
9
PHASE1
7
NC
8
PHASE1
6
WQFN-24L 4x4
Typical Application Circuit
R1
100
L1 2.2µH
R3 100k
C5
22uF
VIN2
VDD1
21
14
1 PGOOD1
PGOOD2
24 EN1
PGOOD3 17
15 EN2
VOUT2 12
RT8023
16
EN3
FB2 13
8, 9
20
PHASE1
VOUT3
23
FB3 18
FB1
AGND
VOUT1
1.2V/1.5A
11
R4
200k
19
PGND
PGOOD1
EN1
EN2
EN3
2
VIN1
R2
100k
3, 4, 5
VIN2
C3
1µF
C2
0.1µF
C1
10µF
C4
1µF
VIN3
VIN1
6,
Exposed Pad (25)
VIN3
R5
100k
R6
100k
PGOOD2
PGOOD3
R7 425k
VOUT3
2.5V/0.35A
R9 425k
R10
200k
VOUT2
2.5V/0.7A
C7
1µF
R8
200k
C6
1µF
Figure 1. 1.2V Output Step-Down Converter and Dual 2.5V Output Regulators
Note : Must to use ceramic X5R/X7R capacitors.
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DS8023-03 March 2011
RT8023
Functional Pin Description
Pin No.
1
Pin Name
PGOOD1
Pin Function
Power Good Indicator of step-down converter. Open-drain logic output that is
opened when the output voltage exceeds 90% of the regulation point.
Signal Input Supply. Decouple this pin to GND with a capacitor. Normally VIN1 is
2
VDD1
3, 4, 5
VIN1
6,
PGND
25 (Exposed Pad)
8, 9
PHASE1
equal to VDD1. Keep the voltage difference between VDD1 and VIN1 less than
0.5V.
Power Input Supply of step-down converter. Decouple this pin to GND with a
capacitor.
Power Ground. Must be soldered to PCB ground for electrical contact and
optimum thermal performance. The exposed pad must be soldered to a large
PCB and connected to PGND for maximum power dissipation.
Internal Power MOSFET Switches Output of step-down converter. Connect this
pin to the inductor.
Power Input Supply of LDO1. Decouple this pin to GND with a 1Uf or greater
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VIN2
12
VOUT2
Output of LDO1. A 1Uf or greater output low-ESR ceramic capacitor is required
for stability..
13
FB2
Feedback Pin of LDO1. Receives the feedback voltage from a resistive divider
connected across the output.
14
PGOOD2
15
EN2
16
EN3
LDO2 Enable. A logic high level at this pin enables LDO2, while a logic low level
causes LDO2 to shut down.
17
PGOOD3
Power Good Indicator of LDO2. Open-drain logic output that is opened when the
output voltage exceed 90% of regulation point.
18
FB3
Feedback Pin of LDO2. Receives the feedback voltage from a resistive divider
connected across the output.
19
AGND
20
VOUT3
21
VIN3
Power Input Supply of LDO2. Decouple this pin to GND with a 1uF or greater
capacitor.
7, 10, 22
NC
No Internal Connection.
23
FB1
24
EN1
DS8023-03 March 2011
capacitor.
Power Good Indicator of LDO1. Open-drain logic output that is opened when the
output voltage exceeds 90% of the regulation point.
LDO1 Enable. A logical high level at this pin enables LDO1, while a logical low
level causes LDO1 to shut down.
Analog Grand. All small-signal of the IC should connect to this ground, which
connects to PGND at one point for away exposed pad.
Output of LDO2. A 1uF or greater output low-ESR ceramic capacitor is required
for stability.
Feedback Pin of step-down converter. Receives the feedback voltage from a
resistive divider connected across the output.
Step-down converter Enable. A logic high level at this pin enables step-down
converter, while a logic low level causes step-down converter to shut down.
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RT8023
Function Block Diagram
OT
OTP
POR
POR
Slope
Compensation
OSC
VDD1
0.8V
FB1
VIN1
ISEN
EA
OC
Limit
Output
Clamp
Driver
InternalSoft Start
0.72V
Control
Logic
PHASE1
GND
0.4V
PGOOD1
VIN2
VOUT2
EN2
VREF2
PGOOD2
EN1
Current Limit
0.72V
0.8V
FB2
EA
VOUT3
VIN3
EN3
VREF3
Current Limit
PGOOD3
0.72V
0.8V
FB3
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EA
DS8023-03 March 2011
RT8023
Absolute Maximum Ratings
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(Note 1)
Supply Input Voltage, VIN1, VIN2 ----------------------------------------------------------------------------- −0.3V to 6V
Output Pin Voltage ------------------------------------------------------------------------------------------------ −0.3V to (VIN1 + 0.3V)
PHASE Pin Voltage ---------------------------------------------------------------------------------------------- −0.3V to (VIN2 + 0.3V)
Other I/O Pin Voltages ------------------------------------------------------------------------------------------- −0.3V to 6V
Power Dissipation, PD @ TA = 25°C
WQFN-24L 4x4 ---------------------------------------------------------------------------------------------------- 1.923W
Package Thermal Resistance (Note 2)
WQFN-24L 4x4, θJA ----------------------------------------------------------------------------------------------- 52°C/W
WQFN-24L 4x4, θJC ---------------------------------------------------------------------------------------------- 7°C/W
Junction Temperature --------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) ----------------------------------------------------------------------- 260°C
Storage Temperature Range ------------------------------------------------------------------------------------ −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Mode) -------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ---------------------------------------------------------------------------------------------- 200V
Recommended Operating Conditions
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(Note 4)
Supply Input Voltage, Converter ------------------------------------------------------------------------------- 2.6V to 5.5V
Supply Input Voltage, LDOs ------------------------------------------------------------------------------------ 2.4V to 5.5V
Junction Temperature Range ------------------------------------------------------------------------------------ −40°C to 125°C
Ambient Temperature Range ------------------------------------------------------------------------------------ −40°C to 85°C
Electrical Characteristics
(TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Step-down converter
Input Voltage Range
VIN1
2.6
--
5.5
V
Feedback Voltage
VFB1
0.784
--
0.816
V
Under Voltage Lockout Threshold
VUVLO
2.24
2.36
2.48
V
VDD1 Hysteresis
--
150
--
mV
Active, VFB = 0.75V,
Not Switching
--
300
--
μA
DC Bias Current
VDD1 Rising
Shutdown Current
ISHDN
EN2 = 0
--
--
2
μA
Switch On Resistance, High
RFET_H
I PHASE = 0.5A
--
150
270
mΩ
Switch On Resistance, Low
RFET_L
I PHASE = 0.5A
--
90
150
mΩ
Peak Current Limit
ILIM
1.7
2.3
3.2
A
1
1.2
1.4
MHz
--
0.01
1
%/V
Switching Frequency
Output Voltage Line Regulation
VIN1 = 2.6V to 5.5V
To be continued
DS8023-03 March 2011
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5
RT8023
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
--
0.01
1
%
0.68
0.72
0.76
V
--
--
100
Ω
EN1 Input High
1.4
--
--
V
EN1 Input Low
--
--
0.4
V
--
145
--
--
25
--
Measured by sever loop, EA
output from 0.253V to 0.853V
Output Voltage Load Regulation
FB Threshold for PGOOD
Transition
PGOOD1 Pull-Down Resistance
Thermal Shutdown Temperature
TSD
Thermal Shutdown Hysteresis
ΔTSD
(Note 5)
°C
LDO1 (VIN = VOUT + 0.5V, VEN = VIIN, CIN = COUT = 1uF (Ceramic))
Input Voltage Range
VIN2
2.4
--
5.5
V
Feed Back Voltage
VFB2
0.784
--
0.816
V
Output Noise Voltage
eNO
VOUT2 = 1.5V, IOUT2 = 1mA
--
30
--
μVRMS
Quiescent Current
IQ
VEN2 = 5V, I OUT2 = 0mA
--
35
60
μA
Shutdown Current
I SHDN
EN2 = 0
--
--
2
μA
EN2 Pin Current
I EN2
Measured EN leakage current.
EN2 = 5.5V
--
0.1
1
μA
Current Limit
I LIM
RLOAD = 0Ω
0.7
0.9
1.2
A
Dropout Voltage
VDROP
IOUT2 = 500mA, VIN2 > 2.7V
--
250
400
mV
Load Regulation
ΔVLOAD
--
1
--
%
Line Regulation
ΔVLINE
--
0.01
0.2
%/V
--
40
--
dB
--
0.72
0.76
V
--
--
120
Ω
EN2 Input High
1.4
--
--
V
EN2 Input Low
--
--
0.4
V
Power Supply Rejection Ratio,
f = 100kHz
FB Threshold for PGOOD
Transition
PSRR
1mA < IOUT2 < 500mA,
VIN2 > 2.7V
VIN2 = (VOUT2 + 0.5) to 5.5V
IOUT2 = 1mA
IOUT2 = 300mA
PGOOD2 Pull-Down Resistance
LDO2 (VIN = VOUT + 0.5V, VEN = VIN, CIN = C OUT = 1uF (Ceramic))
Input Voltage Range
VIN3
2.4
--
5.5
V
Feed Back Voltage
VFB3
0.784
--
0.816
V
Output Noise Voltage
eNO
VOUT3 = 1.5V, IOUT3 = 1mA
--
30
--
μVRMS
Quiescent Current
IQ
VEN3 = 5V, I OUT3 = 0mA
--
35
60
μA
Shutdown Current
I SHDN
EN1 = 0
--
--
2
μA
EN3 Pin Current
I EN3
Measured EN leakage current.
EN3 = 5.5V
--
0.1
1
μA
To be continued
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DS8023-03 March 2011
RT8023
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
0.35
0.48
0.6
A
--
250
400
mV
--
1
--
%
--
0.01
0.2
%/V
--
0.1
1
μA
0.35
0.48
0.6
A
--
250
400
mV
--
1
--
%
--
0.01
0.2
%/V
--
40
--
dB
--
0.72
0.76
V
--
--
120
Ω
EN3 Input High
1.4
--
--
V
EN3 Input Low
--
--
0.4
V
Current Limit
I LIM
RLOAD = 0Ω
Dropout Voltage
VDROP
IOUT3 = 250mA, VIN3 > 2.7V
Load Regulation
ΔVLOAD
Line Regulation
ΔVLINE
EN3 Pin Current
I EN3
1mA < IOUT3 < 250mA,
VIN3 > 2.7V
VIN3 = (VOUT3 + 0.5) to 5.5V
IOUT3 = 1mA
Measured EN leakage current.
EN3 = 5.5V
Current Limit
I LIM
RLOAD = 0Ω
Dropout Voltage
VDROP
IOUT3 = 250mA, VIN3 > 2.7V
Load Regulation
ΔVLOAD
Line Regulation
ΔVLINE
Power Supply Rejection Ratio,
f = 100kHz
FB3 Threshold for PGOOD
Transition
PSRR
1mA < IOUT3 < 250mA,
VIN3 > 2.7V
VIN3 = (VOUT3 + 0.5) to 5.5V
IOUT3 = 1mA
IOUT3 = 150mA
PGOOD3 Pull-Down Resistance
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective four layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard. The case point of θJC is on the expose pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. The power source for thermal shutdown circuit must be provided by VIN1. There must be a power input into LDO1 and
then the LDO2 can provide the thermal shutdown function.
DS8023-03 March 2011
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7
RT8023
Typical Operating Characteristics
Buck Efficiency vs. Output Current
Buck Output Voltage vs. Load Current
100
1.203
VIN1 = 5V
90
1.202
VIN1 = 3.3V
70
Output Voltage (V)
Efficiency (%)
80
60
50
40
30
1.201
VIN1 = 5.5V
1.200
VIN1 = 3.3V
1.199
1.198
20
1.197
10
VOUT1 = 1.2V
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
VOUT1 = 1.2V
1.196
1.5
0
0.15 0.3 0.45 0.6 0.75 0.9 1.05 1.2 1.35 1.5
Output Current (A)
Load Current (A)
Buck Current Limit vs. Temperature
Buck Output Voltage vs. Temperature
2.6
1.215
VIN1 = 5.5V
1.210
VIN1 = 3.3V
2.5
2.4
Current Limit (A)
Output Voltage (V)
1.220
1.205
1.200
1.195
1.190
2.3
2.2
2.1
2.0
VIN1 = 3.3V
VIN1 = 5.5V
1.9
1.8
1.185
1.7
VOUT1 = 1.2V
1.180
-50
-25
0
25
50
75
100
VOUT1 = 1.2V
1.6
-50
125
-25
0
Buck Frequency vs. Input Voltage
50
75
100
125
Buck Frequency vs. Input Voltage
1.30
1.30
1.25
1.25
Frequency (MHz)
Frequency (MHz)
25
Temperature (°C)
Temperature (°C)
1.20
1.15
1.10
1.05
1.20
VIN1 = 5.5V
1.15
1.10
VIN1 = 3.3V
1.05
VOUT1 = 1.2V, IOUT1 = 0.1A
1.00
2.5
3
3.5
4
4.5
Input Voltage (V)
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5
5.5
VOUT1 = 1.2V, IOUT1 = 0.1A
1.00
-50
-25
0
25
50
75
100
125
Input Voltage (V)
DS8023-03 March 2011
RT8023
Buck Load Transient Response
Buck Switching Waveforms
VIN1 = 5V, VOUT1 = 1.2V
IOUT1 = 0A to 1.5A
VIN1 = 3.3V, VOUT1 = 1.2V
IOUT1 = 1.5A
VOUT1
(5mV/Div)
VOUT1
(50mV/Div)
I PHASE1
VPHASE1
(5V/Div)
IOUT1
(1A/Div)
I PHASE1
(500mA/Div)
Time (50μs/Div)
Time (1μs/Div)
Buck Power On from EN
Buck PGOOD Response
VIN1 = 3.3V, VOUT1 = 1.2V, IOUT1 = 1.5A
VIN1 = 3.3V, VOUT1 = 1.2V, IOUT1 = 1.5A
VEN1
(2V/Div)
VEN1
(2V/Div)
VOUT1
(500mV/Div)
VOUT1
(500mV/Div)
IOUT1
(0.5A/Div)
I IN1
(0.5A/Div)
VPGOOD1
(2V/Div)
Time (100μs/Div)
Time (100μs/Div)
LDO1 Dropout Voltage vs. Load Current
LDO2 Dropout Voltage vs. Load Current
600
600
500
TA = 125°C
400
TA = 25°C
300
200
TA = -40°C
100
VOUT2 = 2.5V
0
0
100
200
300
400
500
Load Current (mA)
DS8023-03 March 2011
600
Dropout Voltage (mV)
Dropout Voltage (mV)
500
TA = 125°C
400
TA = 25°C
300
200
TA = -40°C
100
VOUT3 = 2.5V
0
700
0
50
100
150
200
250
300
350
Load Current (mA)
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RT8023
LDO2 Current Limit vs. Input Voltage
0.60
1.2
0.55
0.50
1.1
Current Limit (A)
Current Limit (A)
LDO1 Current Limit vs. Input Voltage
1.3
1.0
0.9
0.8
0.7
0.45
0.40
0.35
0.30
0.25
VOUT2 = 2.5V
0.6
VOUT3 = 2.5V
0.20
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
Input Voltage (V)
4.5
5
5.5
LDO2 Current Limit vs. Temperature
1.3
0.60
1.2
0.55
VIN3 = 5.5V
VIN2 = 5.5V
1.1
Current Limit (A)
Current Limit (A)
LDO1 Current Limit vs. Temperature
1.0
0.9
VIN2 = 3.3V
0.8
0.7
0.50
0.45
VIN3 = 3.3V
0.40
0.35
0.30
0.25
VOUT2 = 2.5V
0.6
-50
-25
0
25
50
75
100
VOUT3 = 2.5V
0.20
-50
125
-25
Temperature (°C)
2.515
2.525
2.510
2.520
Output Voltage (V)
2.530
VIN2 = 5.5V
2.500
25
50
75
100
125
LDO2 Output Voltage vs. Load Current
2.520
2.505
0
Temperature (°C)
LDO1 Output Voltage vs. Load Current
Output Voltage (V)
4
Input Voltage (V)
VIN2 = 3.3V
2.495
2.490
VIN3 = 5.5V
2.515
VIN3 = 3.3V
2.510
2.505
2.500
2.495
2.485
VOUT2 = 2.5V
2.480
0
100
200
300
400
500
Load Current (mA)
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10
600
700
VOUT3 = 2.5V
2.490
0
50
100
150
200
250
300
350
Load Current (mA)
DS8023-03 March 2011
RT8023
LDO2 Output Voltage vs. Temperature
2.53
2.52
2.52
Output Voltage (V)
Output Voltage (V)
LDO1 Output Voltage vs. Temperature
2.53
2.51
2.50
2.49
2.51
2.50
2.49
2.48
2.48
VIN2 = 3.3V, VOUT2 = 2.5V
VIN3 = 3.3V, VOUT3 = 2.5V
2.47
2.47
-50
-25
0
25
50
75
100
-50
125
Temperature (°C)
0
25
50
75
100
LDO2 Load Transient Response
VIN3 = 5V, VOUT3 = 1.2V
IOUT3 = 0A to 0.35A
VOUT2
(20mV/Div)
VOUT3
(20mV/Div)
IOUT2
(0.5A/Div)
IOUT3
(0.2A/Div)
Time (50μs/Div)
Time (50μs/Div)
LDO1 Line Transient Response
LDO2 Line Transient Response
VIN2 = 2.5V to 3.5V, VOUT2 = 1.2V, IOUT2 = 100mA
VIN3 = 2.5V to 3.5V, VOUT3 = 1.2V, IOUT3 = 100mA
VIN2
(1V/Div)
VIN3
(1V/Div)
VOUT2
(50mV/Div)
VOUT3
(50mV/Div)
Time (50μs/Div)
DS8023-03 March 2011
125
Temperature (°C)
LDO1 Load Transient Response
VIN2 = 5V, VOUT2 = 1.2V
IOUT2 = 0A to 0.7A
-25
Time (50μs/Div)
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RT8023
LDO1 Noise
LDO2 Noise
VIN2 = 4.5V, VOUT2 = 1.5V, IOUT2 = 300mA
VIN3 = 4.5V, VOUT3 = 1.5V, IOUT3 = 300mA
VOUT2
(50uV/Div)
VOUT3
(50uV/Div)
Time (10ms/Div)
Time (10ms/Div)
Crosstalk
0
-10
-10
-20
-20
-30
-30
Crosstalk (dB)
PSRR (dB)
LDO1 PSRR
0
-40
-50
IOUT = 300mA
-60
-70
IOUT = 10mA
-80
-90
10
0.01
100
0.1
1000
1
-40
-50
-60
-70
-80
-90
VIN2 = 2.5V to 2.6V, VOUT2 = 1.5V
-100
10000
10
100000
100
VIN2 to VOUT3, IOUT3 = 10mA
-100
1000000
1000
10
0.01
100
0.1
1000
1
10000
10
100000
100
(kHz)
Frequency (Hz)
Frequency (kHz)
(Hz)
LDO1 Power On from EN2
LDO2 Power On from EN3
VIN2 = 5V, VOUT2 = 1.2V, IOUT2 = 0.3A
VEN3
(5V/Div)
VOUT2
(500mV/Div)
VOUT3
(500mV/Div)
I IN2
(0.5A/Div)
I IN3
(0.5A/Div)
Time (10μs/Div)
1000000
1000
VIN3 = 5V, VOUT3 = 1.2V, IOUT3 = 0.3A
VEN2
(5V/Div)
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12
LDO1 VIN2 = 2.5V to 2.6V
LDO2 VOUT3 = 1.5V
Time (10μs/Div)
DS8023-03 March 2011
RT8023
LDO1 PGOOD Response
LDO2 PGOOD Response
VIN2 = 5V, VOUT2 = 1.2V, IOUT2 = 0.3A
VIN3 = 5V, VOUT3 = 1.2V, IOUT3 = 0.3A
VEN2
(5V/Div)
VEN3
(5V/Div)
VOUT2
(500mV/Div)
VOUT3
(500mV/Div)
VPGOOD
(2V/Div)
IOUT2
(0.5A/Div)
VPGOOD
(2V/Div)
IOUT3
(0.5A/Div)
Time (25μs/Div)
DS8023-03 March 2011
Time (25μs/Div)
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13
RT8023
Application Information
For Buck Converter Part
The Typical Application Circuit shows the basic RT8023
application circuit. External component selection is
determined by the maximum load current and begins with
the selection of the inductor value and operating frequency
followed by CIN and COUT.
Inductor Selection
The inductor value and operating frequency determine the
ripple current according to a specific input and output
voltage. The ripple current ΔIL increases with higher VIN
and decreases with higher inductance.
V
V
ΔIL = ⎡⎢ OUT ⎤⎥ × ⎡⎢1− OUT ⎤⎥
VIN ⎦
⎣ f ×L ⎦ ⎣
Having a lower ripple current reduces not only the ESR
losses in the output capacitors but also the output voltage
ripple. High frequency with small ripple current can achieve
highest efficiency operation. However, it requires a large
inductor to achieve this goal.
For the ripple current selection, the value of ΔIL = 0.4(IMAX)
will be a reasonable starting point. The largest ripple current
occurs at the highest VIN. To guarantee that the ripple
current stays below the specified maximum, the inductor
value should be chosen according to the following
equation :
⎡ VOUT ⎤ ⎡
VOUT ⎤
L =⎢
× ⎢1 −
⎥
⎥
⎣ f × ΔIL(MAX) ⎦ ⎣ VIN(MAX) ⎦
Inductor Core Selection
The inductor type must be selected once the value for L
is known. Generally speaking, high efficiency converters
can not afford the core loss found in low cost powdered
iron cores. So, the more expensive ferrite or
mollypermalloy cores will be a better choice. The selected
inductance rather than the core size for a fixed inductor
value is the key for actual core loss. As the inductance
increases, core losses decrease. Unfortunately, increase
of the inductance requires more turns of wire and therefore
the copper losses will increase.
Ferrite designs are preferred at high switching frequency
due to the characteristics of very low core losses. So,
design goals can focus on the reduction of copper loss
and the saturation prevention.
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14
Ferrite core material saturates “hard”, which means that
inductance collapses abruptly when the peak design
current is exceeded. The previous situation results in an
abrupt increase in inductor ripple current and consequent
output voltage ripple.
Do not allow the core to saturate!
Different core materials and shapes will change the size/
current and price/current relationship of an inductor.
Toroid or shielded pot cores in ferrite or permalloy materials
are small and do not radiate energy. However, they are
usually more expensive than the similar powdered iron
inductors. The rule for inductor choice mainly depends
on the price vs. size requirement and any radiated field/
EMI requirements.
CIN and COUT Selection
The input capacitance, C IN, is needed to filter the
trapezoidal current at the source of the top MOSFET. To
prevent large ripple current, a low ESR input capacitor
sized for the maximum RMS current should be used. The
RMS current is given by :
V
IRMS = IOUT(MAX) OUT
VIN
VIN
−1
VOUT
This formula has a maximum at VIN = 2VOUT, where
I RMS = I OUT /2. This simple worst-case condition is
commonly used for design because even significant
deviations do not offer much relief.
Choose a capacitor rated at a higher temperature than
required. Several capacitors may also be paralleled to
meet size or height requirements in the design.
The selection of COUT is determined by the required effective
series resistance (ESR) to minimize voltage ripple.
Moreover, the amount of bulk capacitance is also a key
for COUT selection to ensure that the control loop is stable.
Loop stability can be checked by viewing the load transient
response as described in a later section.
The output ripple, ΔVOUT , is determined by :
1
⎤
ΔVOUT ≤ ΔIL ⎡⎢ESR +
8fCOUT ⎦⎥
⎣
DS8023-03 March 2011
RT8023
The output ripple will be highest at maximum input voltage
since ΔIL increases with input voltage. Multiple capacitors
placed in parallel may be needed to meet the ESR and
RMS current handling requirement. Dry tantalum, special
polymer, aluminum electrolytic and ceramic capacitors are
all available in surface mount packages. Special polymer
capacitors offer very low ESR value. However, it provides
lower capacitance density than other types. Although
Tantalum capacitors have the highest capacitance density,
it is important to only use types that pass the surge test
for use in switching power supplies. Aluminum electrolytic
capacitors have significantly higher ESR. However, it can
be used in cost-sensitive applications for ripple current
rating and long term reliability considerations. Ceramic
capacitors have excellent low ESR characteristics but can
have a high voltage coefficient and audible piezoelectric
effects. The high Q of ceramic capacitors with trace
inductance can also lead to significant ringing.
Higher values, lower cost ceramic capacitors are now
becoming available in smaller case sizes. Their high ripple
current, high voltage rating and low ESR make them ideal
for switching regulator applications. However, care must
be taken when these capacitors are used at input and
output. When a ceramic capacitor is used at the input
and the power is supplied by a wall adapter through long
wires, a load step at the output can induce ringing at the
input, VIN. At best, this ringing can couple to the output
and be mistaken as loop instability. At worst, a sudden
inrush of current through the long wires can potentially
cause a voltage spike at VIN large enough to damage the
part.
Output Voltage Programming
The resistive divider allows the FB pin to sense a fraction
of the output voltage as shown in Figure2.
V OUT
R1
FB
RT8023
VOUT = VREF ⎛⎜ 1+ R1 ⎞⎟
⎝ R2 ⎠
Where VREF is the internal reference voltage (0.8V typ.).
Efficiency Consideration
The efficiency of a switching regulator is equal to the output
power divided by the input power times 100%. It is often
useful to analyze individual losses to determine what is
limiting the efficiency and which change would produce
the most improvement. The efficiency can be expressed
as :
Efficiency = 100 − (L1 + L2 + L3 + …..)
Where L1, L2, etc., are the individual losses as a
percentage of input power, although all dissipative
elements in the circuit produce losses, VIN quiescent
current and I2R losses are two main sources for most of
the losses.
The VIN quiescent current loss dominates the efficiency
loss at a very low load current whereas the I2R loss
dominates the efficiency loss at medium to high load
current. In a typical efficiency plot, the efficiency curve at
very low load currents can be misleading since the actual
power lost is of no consequence.
1. The VIN quiescent current appears due to two factors
including the DC bias current as given in the electrical
characteristics and the internal main switch and
synchronous switch gate charge currents. The gate charge
current results from switching the gate capacitance of the
internal power MOSFET switches. Each time the gate is
switched from high to low to high again, a packet of charge
ΔQ moves from VIN to ground.
The value of ΔQ/Δt is the current out of VIN that is typically
larger than the DC bias current. In continuous mode,
IGATECHG = f(QT + QB)
R2
GND
Figure 2. Setting the Output Voltage
DS8023-03 March 2011
For adjustable voltage mode, the output voltage is set by
an external resistive divider according to the following
equation :
Where QT and QB are the gate charges of the internal top
and bottom switches. Both the DC bias and gate charge
losses are proportional to VIN and their effects will be more
significant at higher supply voltages.
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15
RT8023
2. I2R losses are calculated from the resistance of the
internal switches R SW and external inductor R L. In
continuous mode, the average output current flowing
through inductor L is “chopped” between the main switch
and the synchronous switch. Thus, the series resistance
looking into the LX pin is a function of both top and bottom
MOSFETs RDS(ON) and the duty cycle (DC) as follows :
RSW = RDS(ON)TOP x DC + RDS(ON)BOT x (1−DC)
The RDS(ON) for both the top and bottom MOSFETs can be
obtained from the Typical Performance Characteristic
curves. Thus, to obtain I2R loss, simply add RSW to RL
and multiply the result by the square of the average output
current.
Other losses including CIN and COUT ESR dissipative
losses and inductor core losses generally account for less
than 2% of total losses.
Checking Transient Response
The regulator loop response can be checked by looking
at the load transient response. Switching regulators take
several cycles to respond to a step in load current. When
a load step occurs, VOUT immediately shifts by an amount
equal to ΔILOAD (ESR) also begins to charge or discharge
COUT generating a feedback error signal for the regulator
to return VOUT to its steady-state value. During this recovery
time, VOUT can be monitored for overshoot or ringing that
would indicate a stability problem.
For LDO Part
The external capacitors used with the RT8023 must be
carefully selected for regulator stability and performance
just like any low-dropout regulator.
Using a capacitor whose value is >1μF on the RT8023
input and the amount of capacitance can be increased
without limit. The input capacitor must be located at a
distance of not more than 1cm from the input pin of the IC
and returned to a clean analog ground. Any good quality
ceramic or tantalum can be used for this capacitor. The
capacitor with larger value and lower ESR (equivalent series
resistance) provides better PSRR and line-transient
response.
The output capacitor must meet both requirements for
minimum amount of capacitance and ESR in all LDO
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16
applications. The RT8023 is designed specifically to work
with low ESR ceramic output capacitor for space-saving
and performance consideration.
Enable
The RT8023 goes into sleep mode when the EN pin is in
the logic low condition. The RT8023 has an EN pin to turn
on or turn off the regulator during this condition. When
the EN pin is in the logic high condition, the regulator will
be turned on. The typical supply current for the EN pin is
0.1μA. The EN pin may be directly tied to VIN to keep the
part on. The enable input is CMOS logic and can not be
left floating.
Current Limit
The RT8023 contains an independent current limiter to
monitor and control the pass transistor's gate voltage. The
part limits the two LDOs' current respectively as follows :
LDO1 : 700mA and LDO2 : 350mA (min.). The output can
be shorted to ground indefinitely without damaging the
part.
PGOOD
The power good output is an open-drain output. It is
designed essentially to work as a power-on reset generator
once the regulated voltage was up or a fault condition
occurs. The output of the power good drives to low when
a fault condition occurs. The power good output will be
driven back to up once the output reaches 90% of its
nominal value. The output voltage level will be drooped at
the fault condition including current limit, thermal shutdown
or shutdown and triggers the PGOOD detector to alarm a
fault condition.
Due to the shutdown mode condition, a fault condition
occurs by pulling up the PGOOD output low. And it will
sink a current from the open drain and the external power.
It is recommended to select a suitable pulling resistance
to achieve the goal of ideal power dissipation control.
PSRR
The power supply rejection ratio (PSRR) is defined as the
ability of a regulator to maintain its output voltage as its
power supply voltage is varied. The PSRR is found to be:
PSRR = 20 x log[ ΔVOUT/ΔVIN]
DS8023-03 March 2011
RT8023
How a PCB layout will affect the PSRR is shown as
Figure 3. If the FB is placed in parallel with the PGOOD
and EN, the output voltage will be interfered to result in a
bad PSRR performance that is shown as Figure 5.
GND VOUT
FB3
PGOOD3
For the layout as shown in Figure 4, the FB is separated
from the PGOOD and the EN. In this condition, there will
be less interference for the output voltage and it will lead
to a better PSRR performance.
EN3
EN2
PGOOD2
FB2
As shown in Figure 5, if the FB is separated from the
PGOOD and EN and a GND path is added, then it will lead
to a better PSRR performance especially for high frequency
applications.
VOUT GND
Figure 3
Thermal Consideration
GND
GND Path
For continuous operation, do not exceed the maximum
operation junction temperature 125°C. The maximum
power dissipation depends on the thermal resistance of
IC package, PCB layout, the rate of surroundings airflow
and temperature difference between junction to ambient.
The maximum power dissipation can be calculated by
following formula :
GND Paht
PD(MAX) = (TJ(MAX) − TA )/θJA
VOUT
FB3
PGOOD3
EN3
EN2
PGOOD2
FB2
VOUT
GND
For recommended operating conditions specification of
RT8023, where T J(MAX) is the maximum junction
temperature of the die (125°C) and TA is the maximum
ambient temperature. The junction to ambient thermal
resistance
Figure 4
0
-10
PSRR (dB)
-20
Where T J(MAX) is the maximum operating junction
temperature 125°C, TA is the ambient temperature and the
θJA is the junction to ambient thermal resistance.
LDO1 PSRR
Figure 3
Figure 4 without GND path
Figure 4 with GND path
θJA is layout dependent. For WQFN-24L 4x4 packages,
the thermal resistance θJA is 52°C/W on the standard JEDC
51-7 four-layers thermal test board. The maximum power
dissipation at TA = 25°C can be calculated by following
formula :
-30
-40
-50
-60
-70
-80
VOUT = 1.5V, IOUT = 10mA
-90
0.01
10
0.1
100
1
1000
10
10000
100
100000
1000
1000000
Frequency (kHz)
(Hz)
Figure 5. The PSRR for the RT8023
Note : The temperature effect must be taken into
P D(MAX) = (125°C − 25°C) / 52°C/W = 1.923 for
WQFN-24L 4x4 packages.
The maximum power dissipation depends on operating
ambient temperature for fixed TJ(MAX) and thermal resistance
θJA For RT8023 packages, the Figure 6 of derating curves
allows the designer to see the effect of rising ambient
temperature of maximum power allowed.
consideration for heavy load PSRR measuring.
DS8023-03 March 2011
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17
RT8023
2.0
Follow the PCB layout guidelines for optimal performance
of RT 8023
1.8
`
`
`
`
Maximum Power Dissipation (W)
Layout Consideration
Please refer to the PSRR section for layout
improvement.
Keep the traces of the main current paths as short and
wide as possible.
Put the input capacitor as close as possible to the device
pins (VIN and GND).
LX node is with high frequency voltage swing and should
be kept small area. Keep analog components away from
LX node to prevent stray capacitive noise pick-up.
`
Connect feedback network behind the output capacitors.
Keep the loop area small. Place the feedback
components near the RT8023. For the LDO layout part,
put the output capacitor as close as possible to the
device pins. (VIN and GND).
`
Connect all analog grounds to a command node and
then connect the command node to the power ground
behind the output capacitors.
1.6
1.4
1.2
1.0
WQFN-24L 4x4
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 6. Derating Curves for RT8023 Packages
The resistive dividers R3, R4, R7,
R8, R9 and R10 must be located
as close to the FB pin as possible.
VOUT1
C4
R3
R4
EN1
FB1
NC
VIN3
VOUT3
AGND
C7
24
23
22
21
20
19
VIN1
R2
2
17
PGOOD3
VIN1
3
16
EN3
VIN1
4
15
EN2
VIN1
5
14
PGOOD2
PGND
6
13
FB2
25
7
8
9
10
11
12
VOUT2
C5
PGND
NC
Keep output capacitor
C5 near the IC.
VDD1
VIN2
C1
FB3
PHASE1
Put input capacitor as
dose as possible to
VIN1 and GND pins.
18
PHASE1
R1
1
NC
C2
R10
PGOOD1
L1
The PHASE1 trace must be
wide and short, keep sensitive
components away from this
trace.
R9 V
OUT3
R6
VIN3
R5
VIN2
R8
R7
C6
C3
Input capacitors C3, C4 and output capacitors
C6, C7 must be located at a distance of not
more than 1cm from RT8023 to GND.
Figure 7
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18
DS8023-03 March 2011
RT8023
Outline Dimension
D2
D
SEE DETAIL A
L
1
E
E2
e
b
1
2
DETAIL A
Pin #1 ID and Tie Bar Mark Options
A
A3
A1
Symbol
1
2
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
3.950
4.050
0.156
0.159
D2
2.300
2.750
0.091
0.108
E
3.950
4.050
0.156
0.159
E2
2.300
2.750
0.091
0.108
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 24L QFN 4x4 Package
Richtek Technology Corporation
Richtek Technology Corporation
Headquarter
Taipei Office (Marketing)
5F, No. 20, Taiyuen Street, Chupei City
5F, No. 95, Minchiuan Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Tel: (8862)86672399 Fax: (8862)86672377
Email: [email protected]
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
DS8023-03 March 2011
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19