ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: [email protected] http://www.roithner-laser.com RLT1550-10G TECHNICAL DATA Infrared Laserdiode Structure: GaInAsP/InP SQW structure Lasing wavelength: single mode 1550 nm typ. Typ. optical power: 10 mW Package: 9 mm (SOT-148) NOTE! LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Maximum LD current If Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 150 30 1.5 6 -20 .. +40 -40 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP Aperture A 1x5 Optical Output Power Po cw 10 Threshold Current Ith cw 50 Operation Current Iop Po = 10 mW 110 Forward Voltage Uf Po = 10 mW 2 Lasing Wavelength λp Po = 10 mW 1520 1550 Beam Divergence θ// Po = 10 mW 25 Beam Divergence θ⊥ Po = 10 mW 40 Monitor Current Im Po = 10 mW > 20 100 UNIT mA mW V V °C °C MAX 1580 UNIT µm² mW mA mA V nm ° ° µA