ROITHNER RLT1550-10G

ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: [email protected] http://www.roithner-laser.com
RLT1550-10G
TECHNICAL DATA
Infrared Laserdiode
Structure: GaInAsP/InP SQW structure
Lasing wavelength: single mode 1550 nm typ.
Typ. optical power: 10 mW
Package: 9 mm (SOT-148)
NOTE!
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Maximum LD current
If
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operating Temperature
TC
Storage Temperature
TSTG
RATING
150
30
1.5
6
-20 .. +40
-40 .. +85
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP
Aperture
A
1x5
Optical Output Power
Po
cw
10
Threshold Current
Ith
cw
50
Operation Current
Iop
Po = 10 mW
110
Forward Voltage
Uf
Po = 10 mW
2
Lasing Wavelength
λp
Po = 10 mW
1520 1550
Beam Divergence
θ//
Po = 10 mW
25
Beam Divergence
θ⊥
Po = 10 mW
40
Monitor Current
Im
Po = 10 mW
> 20 100
UNIT
mA
mW
V
V
°C
°C
MAX
1580
UNIT
µm²
mW
mA
mA
V
nm
°
°
µA