ETC RLT904-20G

ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: [email protected] http://www.roithner-laser.com
RLT904-20G
TECHNICAL DATA
High Power Infrared Laserdiode
NOTE!
Structure: GaAlAs double heterostructure
Lasing wavelength: 904 nm typ., singlemode
Max. optical power: 20 mW
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operating Temperature
TC
Storage Temperature
TSTG
RATING
25
2
30
-60 .. +60
-70 .. +85
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Ith
cw
Operation Current
Iop
Po = 20 mW
Operation Voltage
Uop
Po = 20 mW
Lasing Wavelength
Po = 20 mW
λp
Beam Divergence
Po = 20 mW
θ//
Beam Divergence
Po = 20 mW
θ⊥
Monitor Current
Im
Po = 20 mW
UNIT
mW
V
V
°C
°C
MIN TYP MAX
120 140 160
175 190
2.2
890 904 910
7
10
13
15
30
35
0.6
1
1.2
UNIT
mA
mA
V
nm
°
°
mA