ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 [email protected] www.roithner-laser.com RLT1460-5MG TECHNICAL DATA Infrared Laser Diode NOTE! Structure: double heterostructure Lasing wavelength: 1460 nm typ. Max. optical power: 5 mW Package: 5.6 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature Top Storage Temperature Tstg RATING 5 2 30 -10 .. +50 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Threshold Current Ith cw 15 20 Operation Current Iop Po = 5 mW 35 40 Operation Voltage Vop Po = 5 mW 1.0 1.2 1.3 Lasing Wavelength Po = 5 mW 1450 1460 1470 λp Beam Divergence Po = 5 mW 8 10 15 θ// Beam Divergence Differential Efficiency Monitor Current θ⊥ η Im Po = 5 mW Po = 5 mW Po = 5 mW, Vr=5V 25 250 30 200 350 40 300 650 UNIT mA mA V nm ° ° µW/mA µA