ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner-laser.com RLT8810MG TECHNICAL DATA High Power Infrared Laserdiode Structure: index guided single transverse mode Lasing wavelength: 875 nm typ. Output power: 10 mW cw Package: 5.6 mm, TO-18 NOTE! LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operation Case Temperature TC Storage Temperature TSTG RATING 10 2 30 -10 .. +60 -40 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Threshold Current Ith cw Operation Current Iop Po = 10 mW Operating Voltage Vop Po = 10 mW Lasing Wavelength Po = 10 mW λp Beam Divergence Po = 10 mW θ// Beam Divergence Po = 10 mW θ⊥ Slope Efficiency cw η Monitor Current Im Po = 10 mW MIN 7 20 9 30 0.5 UNIT mW V V °C °C TYP 10 25 1.65 875 10 33 0.7 400 MAX 15 30 1.8 883 12 38 1 500 UNIT mA mA V nm ° ° mW/mA µA