2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO 40 V 30 V VEBO IC 2 Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) mA 600 mA 1.3 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 2.5 1.0 1 2 0.4 Packing Type: TD 4.0 1.5 2SC5551AE-TD-E 2SC5551AF-TD-E TD Marking LOT No. 4.5 EB Top View V 300 RANK 3 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 SANYO : PCP http://www.sanyosemi.com/en/network/ 80812 TKIM/D0209AB TKIM TC-00002042 No. A1118-1/6 2SC5551A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=20V, IE=0A VEB=1V, IC=0A hFE1 VCE=5V, IC=50mA VCE=5V, IC=300mA hFE2 Gain-Bandwidth Product Output Capacitance fT Cob Reverse Transfer Capacitance Cre Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions min typ Unit max 90 1.0 μA 5.0 μA 270 20 VCE=5V, IC=50mA 3.5 GHz 2.9 VCB=10V, f=1MHz 4.0 1.5 pF pF IC=50mA, IB=5mA 0.07 0.3 V IC=50mA, IB=5mA 0.8 1.2 V * : The 2SC5551A is classified by 50mA hFE as follows : Rank E F hFE 90 to 180 135 to 270 Ordering Information Package Shipping 2SC5551AE-TD-E Device PCP 1,000pcs./reel 2SC5551AF-TD-E PCP 1,000pcs./reel IC -- VCE 500μA 450μA 80 250μA 200μA 150μA 50μA 0 4 8 12 16 Collector-to-Emitter Voltage, VCE -- V 2 100 7 5 2 IB=0μA 0 3 3 100μA 20 VCE=5V 5 300μA 40 hFE -- IC 7 400μA 350μA 60 Pb Free 1000 DC Current Gain, hFE Collector Current, IC -- mA 100 memo 20 IT01066 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT01067 No. A1118-2/6 2SC5551A VCE(sat) -- IC 7 IC / IB=10 Forward Transfer Gain, ⏐S21e⏐2 -- dB Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 0.1 7 5 3 2 1.0 3 3 2 5 7 10 5 7 100 3 2 12 z 0MH 10 f=50 8 6 4 2 1.0 3 2 7 10 5 3 5 7 100 2 5 Cob 2 Cre 3 1.0 5 7 1000 IT01069 fT -- IC VCE=5V 7 7 3 2 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- GHz Output Capacitance, Reverse Transfer Capacitance, Cob, Cre -- pF f= 10 5 3 2 1.0 7 5 3 2 0.1 1.0 3 2 5 7 3 2 10 7 5 100 IT01070 Collector-to-Base Voltage, VCB -- V 1.0 2 3 ICP=600mA 1.2 Collector Dissipation, PC -- W 2 s 1m 10 m s op era tio 100 n 7 5 3 Ta=25°C Single pulse When mounted on ceramic substrate (250mm2✕0.8mm) 10 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 5 7 100 2 3 5 7 1000 IT01071 When mounted on ceramic substrate (250mm2✕0.8mm) 1.3 5 DC 3 PC -- Ta 1.4 IC=300mA 2 5 7 10 Collector Current, IC -- mA ASO 1000 Collector Current, IC -- mA M 00 2 14 IT15252 f=1MHz 2 Hz 16 5 7 Cob, Cre -- VCB 10 3 VCE=5V 18 0 2 Collector Current, IC -- mA 7 ⏐S21e⏐2 -- IC 20 1.0 0.8 0.6 0.4 0.2 0 3 5 IT01072 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01073 No. A1118-3/6 2SC5551A Bag Packing Specification 2SC5551AE-TD-E, 2SC5551AF-TD-E No. A1118-4/6 2SC5551A Outline Drawing 2SC5551AE-TD-E, 2SC5551AF-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No. A1118-5/6 2SC5551A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No. A1118-6/6