2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products High breakdown voltage Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings (--)55 V (--)50 V VEBO IC (--)5 ICP IB PC Base Current Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg mA (--)300 mA (--)30 mA 200 mW 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7053-001 • Package • JEITA, JEDEC 0.55 0.13 1.3 0.95 2SA1179N6-TB-E 2SA1179N6-CPA-TB-E 2SC2812N6-TB-E 2SC2812N6-CPA-TB-E : CPA : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB 0 to 0.1 0.55 2 1 2.4 3 0.2 MIN Package Dimensions 0.45 V (--)150 TB 1.3 MAX 1.9 2.93 Marking L LOT No. 2SA1179N LOT No. M LOT No. SANYO : CPA LOT No. 1.0 1 : Base 2 : Emitter 3 : Collector 2SC2812N http://www.sanyosemi.com/en/network/ 91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7 2SA1179N/2SC2812N Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min Emitter Cutoff Current ICBO IEBO VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT VCE=(--)6V, IC=(--)1mA 2SC2812N : VCE=6V, IC=1mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage typ 200 VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO (--)0.1 μA (--)0.1 μA 400 2SA1179N : VCE=--6V, IC=--10mA V(BR)CBO V(BR)CEO Unit max 100 MHz (180) MHz (4.0)3.0 pF (--0.15)0.1 IC=(--)50mA, IB=(--)5mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A (--)0.5 V (--)1.0 V (--)55 V (--)50 V (--)5 V * : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws : Rank hFE 6 200 to 400 Ordering Information Package Shipping 2SA1179N6-TB-E Device CPA 3,000pcs./reel 2SA1179N6-CPA-TB-E CPA 3,000pcs./reel 2SC2812N6-TB-E CPA 3,000pcs./reel 2SC2812N6-CPA-TB-E CPA 3,000pcs./reel IC -- VCE μA --50 A --45μ A 0 --4 μ A --35μ --30μA --25μA --12 --8 Pb Free IC -- VCE 20 2SA1179N --20μA --15μA --10μA --4 2SC2812N 50μA 45μA Collector Current, IC -- mA Collector Current, IC -- mA --16 memo --5μA 16 40μA 35μA 30μA 12 25μA 20μA 8 15μA 4 10μA 5μA IB=0μA 0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 --50 10 20 30 40 IT04196 IC -- VBE 240 2SA1179N VCE= --6V 2SC2812N VCE=6V --200 --160 --120 --80 160 120 Ta=75° C 25°C --25°C Collector Current, IC -- mA 200 Ta=75° C 25°C --25°C Collector Current, IC -- mA 50 Collector-to-Emitter Voltage, VCE -- V IT04195 IC -- VBE --240 IB=0μA 80 40 --40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT04197 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT04198 No.7198-2/7 2SA1179N/2SC2812N hFE -- IC 1000 hFE -- IC 1000 2SA1179N VCE= --6V 7 2SC2812N VCE=6V 7 DC Current Gain, hFE DC Current Gain, hFE 5 Ta=75°C 25°C 3 --25°C 2 Ta=75°C 5 25°C --25°C 3 2 100 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 3 2 100 7 5 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 2 3 5 7 10 2 3 5 7 100 2 3 IT04200 f T -- IC 2SC2812N VCE=6V 5 3 2 100 7 5 3 1.0 3 2 3 5 7 2 10 3 5 7 Cob -- VCB 2 2SC2812N f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 IT04202 2SA1179N f=1MHz 10 7 5 3 2 10 7 5 3 2 1.0 1.0 7 5 7 5 7 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 IT04203 2 --0.1 7 5 3 3 5 7 --10 2 3 5 2 1.0 3 7 --100 Collector Current, IC -- mA 2 3 5 IT04205 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 7 7 100 IT04204 VCE(sat) -- IC 5 2SA1179N IC / IB= --10 2 --1.0 5 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 Collector Current, IC -- mA IT04201 Cob -- VCB 2 5 7 1.0 7 2SA1179N VCE= --6V 3 --1.0 2 3 Collector Current, IC -- mA f T -- IC 7 Gain-Bandwidth Product, f T -- MHz 100 0.1 5 7--100 2 3 IT04199 2SC2812N IC / IB=10 3 2 0.1 7 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 IT04206 No.7198-3/7 2SA1179N/2SC2812N ASO 0.1 DC 7 5 op 100μs IC=0.15A 2 s 1m s s m 10 00m 1 Collector Current, IC -- A 10μs ICP=0.3A 3 er ati on 3 2 0.01 7 5 3 2 Ta=25°C Mounted on a glass epoxy board (20✕30✕1.6mm) For PNP, the minus sign is omitted. 0.001 0.1 2 3 PC -- Ta 250 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- mW 7 5 200 150 100 50 0 5 7 100 IT04207 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04208 No.7198-4/7 2SA1179N/2SC2812N Embossed Taping Specification 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E No.7198-5/7 2SA1179N/2SC2812N Outline Drawing Land Pattern Example 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.7198-6/7 2SA1179N/2SC2812N Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.7198-7/7