2SB1216/2SD1816 Ordering number : EN2540B SANYO Semiconductors DATA SHEET 2SB1216/2SD1816 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • Low collector-to-emitter saturation voltage Small and slim package facilitating compactness of sets High fT • Good linearity of hFE • Fast switching time Specifications ( ): 2SB1216 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)120 V Collector-to-Emitter Voltage VCEO (--)100 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)4 A Collector Current (Pulse) ICP (--)8 A Continued on next page. Package Dimensions unit : mm (typ.) Package Dimensions unit : mm (typ.) 7518-003 7003-003 0.6 1 2 2.3 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 2 1.2 0.5 0.85 3 0 to 0.2 0.6 0.5 2SB1216S-TL-E 2SB1216S-TL-H 2SB1216T-TL-E 2SB1216T-TL-H 2SD1816S-TL-E 2SD1816S-TL-H 2SD1816T-TL-E 2SD1816T-TL-H 0.5 1.5 5.5 4 2.5 1.2 7.5 0.8 1.6 0.85 0.7 2.3 6.5 5.0 0.8 1.5 7.0 5.5 4 2SB1216S-E 2SB1216S-H 2SB1216T-E 2SB1216T-H 2SD1816S-E 2SD1816S-H 2SD1816T-E 2SD1816T-H 0.5 7.0 2.3 6.5 5.0 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 B1216 RANK LOT No. 2,4 D1816 RANK 3 LOT No. 3 TL 2SB1216 1 2SD1816 http://semicon.sanyo.com/en/network 50212 TKIM/N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS No. 2540-1/9 1 2SB1216/2SD1816 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions ICBO IEBO hFE1 VCE=(--)5V, IC=(--)0.5A hFE2 VCE=(--)5V, IC=(--)3A fT Cob VCE=(--)10V, IC=(--)0.5A min. typ. VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A 70* V(BR)CBO V(BR)CEO (--)1 μA (--)1 μA 400* 40 (130)180 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)0.2A VCE(sat) VBE(sat) Unit max. MHz (65)40 pF (--200)150 (--500)400 (--)0.9 (--)1.2 mV VCE=(--)2A, IC=(--)0.2A IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V V 100 ns (800)900 ns 50 ns * : The 2SB1216/2SD1816 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20Ms D.C.b1% INPUT OUTPUT IB2 VR RB 507 + 100MF VBE= --5V + 470MF VCC=50V IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1216S-E Device TP 500pcs./bag Pb Free 2SB1216S-H TP 500pcs./bag Pb Free and Halogen Free 2SB1216T-E TP 500pcs./bag Pb Free 2SB1216T-H TP 500pcs./bag Pb Free and Halogen Free 2SD1816S-E TP 500pcs./bag Pb Free 2SD1816S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1816T-E TP 500pcs./bag Pb Free 2SD1816T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1216S-TL-E TP-FA 700pcs./reel Pb Free 2SB1216S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1216T-TL-E TP-FA 700pcs./reel Pb Free 2SB1216T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1816S-TL-E TP-FA 700pcs./reel Pb Free 2SD1816S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1816T-TL-E TP-FA 700pcs./reel Pb Free 2SD1816T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free No. 2540-2/9 2SB1216/2SD1816 IC -- VCE Collector Current, IC -- A --4 --3 A --40m --30mA --20mA --2 --10mA --1 --5mA 0 --2mA IB=0 0 --1 --2 --3 A 30m 20mA 10mA 2 5mA 1 IB=0 0 1 --6mA --5mA --4mA --3mA --2mA --0.4 2 3 2SD1816 8mA 7mA 1.6 6mA 5mA 1.2 4mA 3mA 0.8 2mA 0.4 1mA IB=0 0 --10 --20 --30 --40 0 --50 IB=0 0 10 IC -- VBE --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 5 2 1 --25°C 100 7 5 3 2 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR09256 1.0 1.2 ITR09255 2SD1816 VCE=5V Ta=75°C 25°C --25°C 100 7 5 3 2 7 5 Collector Current, IC -- A 0.8 hFE -- IC 2 10 3 0.6 5 7 5 2 0.4 7 10 --0.01 0.2 3 2 5 0 1000 25°C Ta=75°C 3 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE DC Current Gain, hFE 3 4 0 --1.2 2SB1216 VCE= --5V 7 50 2SD1816 VCE=5V ITR09254 hFE -- IC 1000 40 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --2 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --3 30 IC -- VBE 5 2SB1216 VCE= --5V --4 20 Collector-to-Emitter Voltage, VCE -- V ITR09253 Collector-to-Emitter Voltage, VCE -- V ITR09252 --5 5 ITR09251 IC -- VCE 2.0 --1mA 0 4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A A --10m --9mA --8mA --7mA --0.8 A 100m 3 ITR09250 2SB1216 --1.2 4 0 --5 IC -- VCE --1.6 90mA 80mA 2SD1816 70mA 60mA 50mA 40mA 2mA --4 Collector-to-Emitter Voltage, VCE -- V --2.0 IC -- VCE 5 2SB1216 From top --100mA --90mA --80mA --70mA --60mA --50mA Collector Current, IC -- A --5 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC -- A 2 3 5 10 ITR09257 No. 2540-3/9 2SB1216/2SD1816 f T -- IC 2SD1816 2SB1216 100 7 5 3 2 2 3 5 7 2 0.1 3 5 7 1.0 2 Collector Current, IC -- A 3 2 --1000 5 3 2 --100 25°C °C --25 Ta=75°C 3 2 --10 5 --0.01 2 3 5 2 --0.1 3 5 2 --1.0 3 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 3 2 7 5 25°C 75°C 7 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR09259 VCE(sat) -- IC 2SD1816 IC / IB=10 3 2 1000 7 5 3 2 100 7 5 25°C 3 Ta=75°C --25°C 10 5 2 0.01 3 5 2 0.1 3 5 2 1.0 3 Collector Current, IC -- A VBE(sat) -- IC 10 5 10 ITR09261 2SD1816 IC / IB=10 7 5 3 2 25°C 1.0 Ta= --25°C 7 5 75°C 3 5 --0.01 2 3 5 2 --0.1 3 5 --1.0 2 3 Collector Current, IC -- A 2 5 --10 ITR09262 5 0.01 2 3 5 2 0.1 3 5 2 1.0 Collector Current, IC -- A ASO 10 3 5 10 ITR09263 PC -- Ta 25 era era 5 tio tio n( n( Ta = =2 Tc 3 2 ms 100 op op DC DC 1.0 s 1m ms 10 3 2 0.1 C) 5° 25 °C ) 5 3 2 2SB1216 / 2SD1816 Tc=25°C Single pulse For PNP, the minus sign is omitted. 0.01 5 2 3 5 1.0 2 3 5 10 Collector Dissipation, PC -- W ICP I C 5 Collector Current, IC -- A For PNP, the minus sign is omitted. 5 5 3 2 10 --10 ITR09260 5 Ta= --25°C 2 Collector-to-Base Voltage, VCB -- V 5 2SB1216 IC / IB=10 --1.0 3 2 Collector Current, IC -- A --10 5 ITR09258 2SB1216 IC / IB=10 5 2SB 121 6 2SD 181 6 7 5 5 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 100 7 For PNP, the minus sign is omitted. Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10 2SB1216 / 2SD1816 f=1MHz 2 Output Capacitance, Cob -- pF 3 2 Cob -- VCB 3 2SB1216 / 2SD1816 VCE=10V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Gain-Bandwidth Product, f T -- MHz 5 20 2 3 5 2 100 ITR09264 ea lh ea td iss ip 10 ati on 5 1 0 Collector-to-Emitter Voltage, VCE -- V Id 15 No heat sink 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 150 160 ITR09265 No. 2540-4/9 2SB1216/2SD1816 Taping Specification 2SB1216S-TL-E, 2SB1216S-TL-H, 2SB1216T-TL-E2SB1216T-TL-H, 2SD1816S-TL-E, 2SD1816S-TL-H, 2SD1816T-TL-E, 2SD1816T-TL-H No. 2540-5/9 2SB1216/2SD1816 Outline Drawing Land Pattern Example 2SB1216S-TL-E, 2SB1216S-TL-H, 2SB1216T-TL-E2SB1216T-TL-H, 2SD1816S-TL-E, 2SD1816S-TL-H, 2SD1816T-TL-E, 2SD1816T-TL-H Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. 2540-6/9 2SB1216/2SD1816 Bag Packing Specification 2SB1216S-E, 2SB1216S-H, 2SB1216T-E, 2SB1216T-H, 2SD1816S-E, 2SD1816S-H, 2SD1816T-E, 2SD1816T-H No. 2540-7/9 2SB1216/2SD1816 Outline Drawing 2SB1216S-E, 2SB1216S-H, 2SB1216T-E, 2SB1216T-H, 2SD1816S-E, 2SD1816S-H, 2SD1816T-E, 2SD1816T-H Mass (g) Unit 0.315 mm * For reference No. 2540-8/9 2SB1216/2SD1816 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. 2540-9/9