2SB1202/2SD1802 Ordering number : EN2113D SANYO Semiconductors DATA SHEET 2SB1202/2SD1802 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO Adoption of FBET and MBIT processes • Fast switching speed Low collector-to-emitter saturation voltage Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller Specifications ( ): 2SB1202 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)5 A (--)6 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.5 3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 0.6 1 2 2.5 0.8 0.8 1.6 0.85 1.2 1.2 0.85 0.7 3 0 to 0.2 1.2 2.3 2SB1202S-TL-E 2SB1202T-TL-E 2SD1802S-TL-E 2SD1802T-TL-E 0.5 1.5 4 5.5 5.5 4 2.3 6.5 5.0 2SB1202S-E 2SB1202T-E 2SD1802S-E 2SD1802T-E 7.0 1.5 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SSC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag • Package : TP-FA • JEITA, JEDEC : SSC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL B1202 Electrical Connection 2,4 D1802 1 RANK LOT No. RANK LOT No. TL (For PNP, the polarity is reversed.) 3 http://www.sanyosemi.com/en/network/ 82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113-1/10 2SB1202/2SD1802 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions ICBO IEBO hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)3A fT Cob VCE=(--)10V, IC=(--)50mA min typ VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A 100* (--)1 μA (--)1 μA 560* 35 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA VCE(sat) VBE(sat) Unit max MHz (39)25 pF (--0.35)0.19 (--0.7)0.5 (--)0.94 (--)1.2 mV VCE=(--)2V, IC=(--)100mA IC=(--)10μA, IE=0A (--)60 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO V V 70 ns (450)650 ns 35 ns * : The 2SB1202/2SD1802 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 25Ω 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SB1202S-E Device TP 500pcs./bag 2SB1202T-E TP 500pcs./bag 2SD1802S-E TP 500pcs./bag 2SD1802T-E TP 500pcs./bag 2SB1202S-TL-E TP-FA 700pcs./reel 2SB1202T-TL-E TP-FA 700pcs./reel 2SD1802S-TL-E TP-FA 700pcs./reel 2SD1802T-TL-E TP-FA 700pcs./reel memo Pb Free No.2113-2/10 2SB1202/2SD1802 IC -- VCE mA mA --100 --50mA --3 --20mA --2 --10mA --5mA --1 --0.4 --0.8 --1.2 mA --14 5mA IB=0 0.4 0.8 1.2 1.6 Collector Current, IC -- A --4mA --2mA 2.0 Collector-to-Emitter Voltage, VCE -- V ITR09163 IC -- VCE 2SD1802 8mA --6mA --0.8 10mA 2 2.0 --8mA --1.2 20mA ITR09162 A --10m --1.6 3 0 2SB1202 A --12m 40mA --2.0 IC -- VCE --2.0 4 0 --1.6 Collector-to-Emitter Voltage, VCE -- V A 100m 80mA 60mA 1 IB=0 0 Collector Current, IC -- A 2SD1802 --200 --4 0 IC -- VCE 5 2SB1202 Collector Current, IC -- A Collector Current, IC -- A --5 7mA 1.6 6mA 5mA 1.2 4mA 0.8 3mA 2mA 0.4 --0.4 1mA IB=0 0 0 --4 --8 --12 IB=0 0 --16 --20 0 IC -- VBE 2SB1202 VCE= --2V --1.2 --0.8 --0.4 2SD1802 VCE=2V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 0.2 0.4 0.8 2SB1202 VCE= --2V 1.0 1.2 ITR09167 hFE -- IC 1000 7 0.6 Base-to-Emitter Voltage, VBE -- V ITR09166 hFE -- IC 1000 2SD1802 VCE=2V 7 5 3 Ta=75°C 2 25°C DC Current Gain, hFE 5 DC Current Gain, hFE 20 Ta= 75° C 25°C --25° C --2.0 16 3.2 Collector Current, IC -- A --2.4 Ta=7 5°C 25°C --25° C Collector Current, IC -- A --2.8 12 IC -- VBE 3.6 --3.2 --1.6 8 Collector-to-Emitter Voltage, VCE -- V ITR09165 Collector-to-Emitter Voltage, VCE -- V ITR09164 --3.6 4 --25°C 3 100 100 7 7 5 Ta=75°C 25°C --25°C 2 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09168 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09169 No.2113-3/10 2SB1202/2SD1802 f T -- IC 2SB1202 VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 100 7 5 3 2 3 5 5 3 2 2 3 5 7 2 0.1 3 5 7 2 1.0 3 ITR09171 Cob -- VCB 5 2SD1802 f=1MHz 3 7 2 --10 3 5 7 --100 ITR09172 2 100 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 25 7 °C C 25° C 75° 5 -Ta= 3 3 5 2 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR09173 VCE(sat) -- IC 1000 2SB1202 IC / IB=20 --100 2 1.0 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 10 2 Collector-to-Base Voltage, VCB -- V 2SD1802 IC / IB=20 7 5 3 2 100 7 25 5 °C 5°C --2 Ta= 3 75°C 2 10 --10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 5 7 0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 Ta= --25°C 25°C 7 75°C 5 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 3 2 3 5 ITR09175 VBE(sat) -- IC 2SD1667 2SD1802 IC / IB=20 7 5 --1.0 3 10 2SB1202 IC / IB=20 7 2 ITR09174 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 100 Collector Current, IC -- A Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 5 3 2 ITR09170 3 7 5 10 0.01 3 2SB1202 f=1MHz 10 --1.0 2SD1802 VCE=10V 7 Cob -- VCB 5 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09176 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09177 No.2113-4/10 2SB1202/2SD1802 5 IC=3A 100ms 2 op era tio 3 2 nT a= 2 °C 25 c= nT tio 5 ms 10 DC era op 1.0 5° C 0.1 5 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 2 0.01 3 5 7 1.0 2 3 5 7 10 PC -- Ta 16 2SB1202 / 2SD1802 1m s DC Collector Current, IC -- A 3 ASO ICP=6A 2SB1202 / 2SD1802 15 14 Collector Dissipation, PC -- W 10 12 Id ea lh ea td iss ip at io n 10 8 6 4 2 No heat sink 1 0 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 ITR09178 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09179 No.2113-5/10 2SB1202/2SD1802 Taping Specification 2SB1202S-TL-E, 2SB1202T-TL-E, 2SD1802S-TL-E, 2SD1802T-TL-E No.2113-6/10 2SB1202/2SD1802 Outline Drawing Land Pattern Example 2SB1202S-TL-E, 2SB1202T-TL-E, 2SD1802S-TL-E, 2SD1802T-TL-E Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2113-7/10 2SB1202/2SD1802 Bag Packing Specification 2SB1202S-E, 2SB1202T-E, 2SD1802S-E, 2SD1802T-E No.2113-8/10 2SB1202/2SD1802 Outline Drawing 2SB1202S-E, 2SB1202T-E, 2SD1802S-E, 2SD1802T-E Mass (g) Unit 0.315 mm * For reference No.2113-9/10 2SB1202/2SD1802 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.2113-10/10