2SA1418 / 2SC3648 Ordering number : EN1788C SANYO Semiconductors DATA SHEET 2SA1418/2SC3648 Applicaitons • PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching, Preriver Applications Color TV audio output, inverter Features • • • • High breakdown voltage and large current capacity Adoption of FBET, MBIT processes Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1418 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)180 (--)160 V (--)6 V Collector Current VEBO IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector-to-Emitter Voltage Emitter-to-Base Voltage V Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 0.4 Packing Type: TD 4.0 1.5 2SA1418S-TD-E 2SC3648S-TD-E 2SC3648T-TD-E TD Marking 3 3.0 RANK RANK 2SA1418 0.75 2SC3648 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AD 1.5 CD 0.5 LOT No. 0.4 SANYO : PCP 1 2 1 3 2SA1418 3 2SC3648 http://www.sanyosemi.com/en/network/ 82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS No.1788-1/7 2SA1418 / 2SC3648 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) mW 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA hFE2 VCE=(--)5V, IC=(--)10mA fT Cob VCE=(--)10V, IC=(--)50mA 120 VCB=(--)10V, f=1MHz IC=(--)250mA, IB=(--)25mA (11)8 V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Ratings min ICBO IEBO hFE1 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Conditions 100* max Unit (--)0.1 μA (--)0.1 μA 400* 90 MHz pF (--0.2)0.12 (--0.5)0.4 V (--)0.85 (--)1.2 V IC=(--)250mA, IB=(--)25mA IC=(--)10μA, IE=0A (--)180 V IC=(--)1mA, RBE=∞ (--)160 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V (60)50 ns (900)1000 ns (60)60 ns * : The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB VR 333Ω 50Ω + 100μF + 470μF --5V 100V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) Ordering Information Device Package Shipping PCP 1,000pcs./reel 2SC3648S-TD-E PCP 1,000pcs./reel 2SC3648T-TD-E PCP 1,000pcs./reel 2SA1418S-TD-E memo Pb Free No.1788-2/7 2SA1418 / 2SC3648 IC -- VCE --800 From top --200mA --180mA --160mA --140mA --600 2SA1418 --120mA mA --80mA --60mA --100 --500 --40mA --400 --20mA --300 --200 2SC3648 From top 100mA 90mA 80mA 70mA 60mA 700 Collector Current, IC -- mA Collector Current, IC -- mA --700 IC -- VCE 800 600 500 50mA 40mA 30mA 20mA 400 10mA 300 200 100 --100 IB=0mA 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV 200 400 600 800 1000 Collector-to-Emitter Voltage, VCE -- mV ITR03558 IC -- VCE --800 IB=0mA 0 0 --1000 ITR03559 IC -- VCE 1000 2SA1418 2SC3648 --400 --300 --1.5mA --1.0mA --200 --0.5mA --100 --10 --20 --30 --40 --50 --60 --70 Collector-to-Emitter Voltage, VCE -- V 8 141 3648 2SA 2SC Collector Current, IC -- mA 1.5mA 1.0mA 200 IB=0mA 10 20 30 200 40 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 5 2 1.0 7 5 3 8 41 1 SA 2 2 0.1 7 5 For PNP, minus sign is omitted 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 ITR03563 hFE -- IC 1000 2SC3648 Pulse 7 5 3 3 2 100 7 5 3 2 10 10 7 7 5 5 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7 --1000 2 ITR03564 10V 2V 5 --10V --5V 7 5V V =2 E 100 2 VC DC Current Gain, hFE 2 =-V CE DC Current Gain, hFE 8 364 2SC Collector Current, IC -- mA 3 3 3 80 ITR03561 2SA1418 / 2SC3648 IC / IB=10 ITR03562 2SA1418 Pulse 7 70 3 2 1.2 hFE -- IC 1000 60 VCE(sat) -- IC 3 0 50 Collector-to-Emitter Voltage, VCE -- V 10 7 5 600 400 400 ITR03560 2SA1418 / 2SC3648 VCE=5V For PNP, minus sign is omitted 800 2.0mA 0 0 --80 IC -- VBE 1000 600 A 3.5m 3.0mA 2.5mA 0.5mA IB=0mA 0 0 0m A --500 800 4. Collector Current, IC -- mA A .0m -4.5mA A --4.0m mA --3.5 A --3.0m --2.5mA --2.0mA --5 --600 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- mA --700 3 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 2 ITR03565 No.1788-3/7 2SA1418 / 2SC3648 f T -- IC 2 VCE=5V 10V 100 7 5 3 2 10 5 7 2 2 3 --100 Collector Current, IC -- mA --10 3 5 7 7 --1000 ITR03566 364 5 8 3 2 For PNP, minus sign is omitted 1.0 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR03568 Collector-to-Base Voltage, VCB -- V PC -- Ta 1.8 5 7 2 10 3 5 7 2 100 3 5 7 1000 ITR03567 1.0 7 5 ASO 2SA1418 / 2SC3648 ICP=1.5A IC=0.7A 10 0m s 3 2 DC op era 0.1 tio n 7 5 3 2 s 2SC 2 m 7 8 3 s 141 10 5 1m 2SA 7 10 2 10V V CE= 5V 100 3 2 5 3 2 Collector Current, IC -- mA 2SA1418 / 2SC3648 f=1MHz 7 2SC3648 3 10 5 Cob -- VCB 100 Output Capacitance, Cob -- pF Gain-Brandwidth Product, f T -- MHz 3 f T -- IC 5 2SA1418 Collector Current, IC -- A Gain-Brandwidth Product, f T -- MHz 5 Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted 0.01 7 5 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 3 ITR03570 Collector Dissipation, PC -- W 1.6 1.4 M ou 1.2 nte do na 1.0 ce ram 0.8 ic bo ard 0.6 No h (2 50 mm eat s 0.4 ink 2 ✕0 .8m m) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03569 No.1788-4/7 2SA1418 / 2SC3648 Bag Packing Specification 2SA1418S-TD-E, 2SC3648S-TD-E, 2SC3648T-TD-E No.1788-5/7 2SA1418 / 2SC3648 Outline Drawing 2SA1418S-TD-E, 2SC3648S-TD-E, 2SC3648T-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.1788-6/7 2SA1418 / 2SC3648 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.1788-7/7