2SB1124/2SD1624 Ordering number : EN2019B SANYO Semiconductors DATA SHEET 2SB1124/2SD1624 PNP/NPN Epitaxial Planar Silicon Transistors High Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of FBET, MBIT processes Fast switching speed • • • • Low collector-to-emitter saturation voltage Large current capacity and wide ASO Specifications ( ): 2SB1124 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)3 A (--)6 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 0.4 4.0 1.5 3 2SB1124S-TD-E 2SB1124S-TD-H 2SB1124T-TD-E 2SB1124T-TD-H 2SD1624S-TD-E 2SD1624S-TD-H 2SD1624T-TD-E 2SD1624T-TD-H Packing Type: TD TD Marking 3.0 RANK 2SB1124 0.75 RANK 2SD1624 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. BG 1.5 DG 0.5 LOT No. 0.4 SANYO : PCP 1 2 1 3 2SB1124 3 2SD1624 http://www.sanyosemi.com/en/network/ 80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019-1/7 2SB1124/2SD1624 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) mW 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)3A fT Cob VCE=(--)10V, IC=(--)50mA Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ 100* max Unit (--)1 μA (--)1 μA 560* 35 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA MHz (39)25 pF (--0.35)0.19 (--0.7)0.5 V (--)0.94 (--)1.2 V VCE=(--)2A, IC=(--)100mA IC=(--)10μA, IE=0A (--)60 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions V (70)70 ns (450)650 ns (35)35 ns * ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB OUTPUT IB2 25Ω VR 50Ω + 100μF --5V + 470μF 25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1124S-TD-E Device PCP 1,00pcs./reel Pb Free 2SB1124S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SB1124T-TD-E PCP 1,00pcs./reel Pb Free 2SB1124T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624S-TD-E PCP 1,00pcs./reel Pb Free 2SD1624S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624T-TD-E PCP 1,00pcs./reel Pb Free 2SD1624T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free No.2019-2/7 2SB1124/2SD1624 IC -- VCE --5.0 mA --4.5 Collector Current, IC -- A --50mA --2.5 --20mA --1.5 --10mA --1.0 --5mA --0.5 0 --0.4 --0.8 --1.2 20mA 2.5 10mA 2.0 1.5 5mA 1.0 --2.0 0 mA A 1.6 2.0 ITR08908 2SD1624 8mA 1.8 7mA 1.6 Collector Current, IC -- A --8mA --1.4 1.2 IC -- VCE 2.0 --10mA --1.6 0.8 Collector-to-Emitter Voltage, VCE -- V 2SB1124 --12m --14 --1.8 0.4 ITR08907 IC -- VCE --2.0 IB=0 0 --1.6 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 40mA 3.0 0.5 IB=0 0 --6mA --1.2 --1.0 --4mA --0.8 --0.6 --2mA --0.4 --0.2 6mA 1.4 5mA 1.2 4mA 1.0 3mA 0.8 0.6 2mA 0.4 1mA 0.2 IB=0 0 0 --2 --4 --6 --8 --10 --12 --14 --18 --20 0 6 8 Collector Current, IC -- A --2.4 --2.0 Ta=7 5°C 25°C --25°C --1.6 --0.8 10 12 14 16 18 --0.4 20 ITR08910 IC -- VBE 3.2 2SD1624 VCE=2V 2.8 --1.2 4 Collector-to-Emitter Voltage, VCE -- V 2SB1124 VCE= --2V --2.8 2 ITR08909 IC -- VBE --3.2 IB=0 0 --16 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 3.5 2.4 2.0 1.6 Ta= 75° 25°C C --25° C Collector Current, IC -- A --3.5 --2.0 A 100m 80mA 60mA 4.0 mA --100 --3.0 2SD1624 4.5 0 --20 --4.0 1.2 0.8 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 2SD1624 VCE=2V 7 5 DC Current Gain, hFE 5 1.2 ITR08912 hFE -- IC 1000 2SB1124 VCE= --2V 7 0.2 ITR08911 hFE -- IC 1000 DC Current Gain, hFE IC -- VCE 5.0 2SB1124 Ta=75°C 3 25°C 2 --25°C 100 7 3 2 --25°C 100 7 5 5 3 3 2 25°C Ta=75°C 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR08913 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR08914 No.2019-3/7 2SB1124/2SD1624 f T -- IC 7 3 2SD 162 4 2SB 1124 100 7 5 3 2 10 0.01 3 5 2 0.1 3 5 2 1.0 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV For PNP, the minus sign is omitted. 2 3 5 7 2 10 3 --100 5°C --2 Ta= C 75° 7 25°C 3 2 5 7 100 ITR08916 VCE(sat) -- IC 2SD1624 IC / IB=20 7 2 5 3 2 100 7 25°C 5 C Ta=75° 3 --25°C 2 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 7 0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 25°C --25°C 7 Ta=75°C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 ICP=6A 0m 10m s s s 2 1.0 DC op era 5 tio n 3 2 0.1 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (250mm2✕0.8mm) 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 1.0 2 3 5 ITR08918 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 ITR08920 PC -- Ta 1.8 1m 10 3 Collector Current, IC -- A 2SB1124 / 2SD1624 IC=3A 3 2 2SD1624 IC / IB=20 ITR08919 Collector Dissipation, PC -- W 5 7 0.1 VBE(sat) -- IC 3 7 0.01 5 ASO 10 5 Collector Current, IC -- A 7 5 --1.0 3 10 2SB1124 IC / IB=20 7 2 ITR08917 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 Collector-to-Base Voltage, VCB -- V --10 Collector Current, IC -- A 3 1000 3 5 2SB1 124 2SD 162 4 5 1.0 1.0 VCE(sat) -- IC 5 7 10 ITR08915 2SB1124 IC / IB=20 7 10 5 Collector Current, IC -- A --1000 2 For PNP, the minus sign is omitted. 2 2SB1124 / 2SD1624 f=1MHz 3 5 2 Cob -- VCB 5 2SB1124 / 2SD1624 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 1000 2SB1124 / 2SD1624 1.6 1.5 M 1.4 ou nt 1.2 ed on ac er 1.0 am ic 0.8 bo ar d( 25 0.6 0.5 0.4 No h 0m m2 ✕ eat s ink 0.8 m m ) 0.2 0 5 7 100 ITR08921 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08922 No.2019-4/7 2SB1124/2SD1624 Bag Packing Specification 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H No.2019-5/7 2SB1124/2SD1624 Outline Drawing Land Pattern Example 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H Mass (g) Unit 0.058 mm Unit: mm * For reference 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2019-6/7 2SB1124/2SD1624 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.2019-7/7