ONSEMI 2SD1624T-TD-E

2SB1124/2SD1624
Ordering number : EN2019B
SANYO Semiconductors
DATA SHEET
2SB1124/2SD1624
PNP/NPN Epitaxial Planar Silicon Transistors
High Current Switching
Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
•
Features
Adoption of FBET, MBIT processes
Fast switching speed
•
•
•
•
Low collector-to-emitter saturation voltage
Large current capacity and wide ASO
Specifications ( ): 2SB1124
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Unit
(--)60
V
(--)50
V
(--)6
V
(--)3
A
(--)6
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
4.5
1.6
2.5
1.0
1
2
0.4
4.0
1.5
3
2SB1124S-TD-E
2SB1124S-TD-H
2SB1124T-TD-E
2SB1124T-TD-H
2SD1624S-TD-E
2SD1624S-TD-H
2SD1624T-TD-E
2SD1624T-TD-H
Packing Type: TD
TD
Marking
3.0
RANK
2SB1124
0.75
RANK
2SD1624
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
BG
1.5
DG
0.5
LOT No.
0.4
SANYO : PCP
1
2
1
3
2SB1124
3
2SD1624
http://www.sanyosemi.com/en/network/
80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019-1/7
2SB1124/2SD1624
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
mW
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
VCE=(--)2V, IC=(--)100mA
hFE2
VCE=(--)2V, IC=(--)3A
fT
Cob
VCE=(--)10V, IC=(--)50mA
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
typ
100*
max
Unit
(--)1
μA
(--)1
μA
560*
35
150
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)100mA
MHz
(39)25
pF
(--0.35)0.19
(--0.7)0.5
V
(--)0.94
(--)1.2
V
VCE=(--)2A, IC=(--)100mA
IC=(--)10μA, IE=0A
(--)60
V
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)6
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
min
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
V
(70)70
ns
(450)650
ns
(35)35
ns
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
RB
OUTPUT
IB2
25Ω
VR
50Ω
+
100μF
--5V
+
470μF
25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
memo
2SB1124S-TD-E
Device
PCP
1,00pcs./reel
Pb Free
2SB1124S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SB1124T-TD-E
PCP
1,00pcs./reel
Pb Free
2SB1124T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624S-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624T-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
No.2019-2/7
2SB1124/2SD1624
IC -- VCE
--5.0
mA
--4.5
Collector Current, IC -- A
--50mA
--2.5
--20mA
--1.5
--10mA
--1.0
--5mA
--0.5
0
--0.4
--0.8
--1.2
20mA
2.5
10mA
2.0
1.5
5mA
1.0
--2.0
0
mA
A
1.6
2.0
ITR08908
2SD1624
8mA
1.8
7mA
1.6
Collector Current, IC -- A
--8mA
--1.4
1.2
IC -- VCE
2.0
--10mA
--1.6
0.8
Collector-to-Emitter Voltage, VCE -- V
2SB1124
--12m
--14
--1.8
0.4
ITR08907
IC -- VCE
--2.0
IB=0
0
--1.6
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
40mA
3.0
0.5
IB=0
0
--6mA
--1.2
--1.0
--4mA
--0.8
--0.6
--2mA
--0.4
--0.2
6mA
1.4
5mA
1.2
4mA
1.0
3mA
0.8
0.6
2mA
0.4
1mA
0.2
IB=0
0
0
--2
--4
--6
--8
--10
--12
--14
--18
--20
0
6
8
Collector Current, IC -- A
--2.4
--2.0
Ta=7
5°C
25°C
--25°C
--1.6
--0.8
10
12
14
16
18
--0.4
20
ITR08910
IC -- VBE
3.2
2SD1624
VCE=2V
2.8
--1.2
4
Collector-to-Emitter Voltage, VCE -- V
2SB1124
VCE= --2V
--2.8
2
ITR08909
IC -- VBE
--3.2
IB=0
0
--16
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
3.5
2.4
2.0
1.6
Ta=
75°
25°C C
--25°
C
Collector Current, IC -- A
--3.5
--2.0
A
100m
80mA
60mA
4.0
mA
--100
--3.0
2SD1624
4.5
0
--20
--4.0
1.2
0.8
0.4
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
2SD1624
VCE=2V
7
5
DC Current Gain, hFE
5
1.2
ITR08912
hFE -- IC
1000
2SB1124
VCE= --2V
7
0.2
ITR08911
hFE -- IC
1000
DC Current Gain, hFE
IC -- VCE
5.0
2SB1124
Ta=75°C
3
25°C
2
--25°C
100
7
3
2
--25°C
100
7
5
5
3
3
2
25°C
Ta=75°C
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5
ITR08913
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
ITR08914
No.2019-3/7
2SB1124/2SD1624
f T -- IC
7
3
2SD
162
4
2SB
1124
100
7
5
3
2
10
0.01
3
5
2
0.1
3
5
2
1.0
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
For PNP, the minus sign is omitted.
2
3
5
7
2
10
3
--100
5°C
--2
Ta=
C
75°
7
25°C
3
2
5
7 100
ITR08916
VCE(sat) -- IC
2SD1624
IC / IB=20
7
2
5
3
2
100
7
25°C
5
C
Ta=75°
3
--25°C
2
10
7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
Collector Current, IC -- A
3
5
7 0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
25°C
--25°C
7
Ta=75°C
5
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
ICP=6A
0m 10m s
s
s
2
1.0
DC
op
era
5
tio
n
3
2
0.1
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Mounted on a ceramic board (250mm2✕0.8mm)
5
3
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 1.0
2
3
5
ITR08918
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
ITR08920
PC -- Ta
1.8
1m
10
3
Collector Current, IC -- A
2SB1124 / 2SD1624
IC=3A
3
2
2SD1624
IC / IB=20
ITR08919
Collector Dissipation, PC -- W
5
7 0.1
VBE(sat) -- IC
3
7 0.01
5
ASO
10
5
Collector Current, IC -- A
7
5
--1.0
3
10
2SB1124
IC / IB=20
7
2
ITR08917
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
Collector-to-Base Voltage, VCB -- V
--10
Collector Current, IC -- A
3
1000
3
5
2SB1
124
2SD
162
4
5
1.0
1.0
VCE(sat) -- IC
5
7
10
ITR08915
2SB1124
IC / IB=20
7
10
5
Collector Current, IC -- A
--1000
2
For PNP, the minus sign is omitted.
2
2SB1124 / 2SD1624
f=1MHz
3
5
2
Cob -- VCB
5
2SB1124 / 2SD1624
VCE=10V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
1000
2SB1124 / 2SD1624
1.6
1.5
M
1.4
ou
nt
1.2
ed
on
ac
er
1.0
am
ic
0.8
bo
ar
d(
25
0.6
0.5
0.4
No h
0m
m2
✕
eat s
ink
0.8
m
m
)
0.2
0
5
7 100
ITR08921
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08922
No.2019-4/7
2SB1124/2SD1624
Bag Packing Specification
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
No.2019-5/7
2SB1124/2SD1624
Outline Drawing
Land Pattern Example
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
Mass (g) Unit
0.058 mm
Unit: mm
* For reference
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.2019-6/7
2SB1124/2SD1624
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No.2019-7/7