SemiWell Semiconductor SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ - Very High Switching Speed - Minimum Lot-to-Lot hFE Variation - Wide Reverse Bias S.O.A 1.Base 2.Collector ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. TO-3P 1 2 3 Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V IC Collector Current 12.0 A ICP Collector Pulse Current 24.0 A IB Base Current 6.0 A IBM Base Peak Current ( tP ＜ 5 ms ) 12.0 A PC Total Dissipation at TC = 25 °C 130 W - 65 ~ 150 °C 150 °C Value Units TSTG TJ Storage Temperature Max. Operating Junction Temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1.67 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Jul, 2006. Rev. 0 1/4 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved SBW13009-S Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage hFE* ts tf 2/4 Condition DC Current Gain Storage Time Fall Time TC = 100 °C IC = 5.0A IC = 8.0A IC = 12.0A IB = 1.0A IB = 1.6A IB = 3.0A IC = 5.0A IC = 8.0A IC = 5.0A IC = 8.0A IC = 8.0A IB1 = 1.6A TP = 25㎲ Min Typ Max Units - - 1.0 5.0 mA 400 - - V - - IB = 1.0A IB = 1.6A - - VCE = 5V VCE = 5V 20 5 - VCC = 125V IB2 = -1.6A - 0.5 0.6 1.0 1.2 1.6 V V 40 30 3.0 0.7 ㎲ SBW13009-S Fig 1. Saturation voltage Fig 2. DC Current Gain Fig 3. Swiching Time Fig 4. Power Derating Fig 5. Safe operation area Fig 6. Collect output capacitance 3/4 SBW13009-S TO-3P Dimension corresponding symbol measurement A(mm) 15.60±0.20 A1(mm) 13.60±0.20 A2(mm)dia. 9.60±0.20 B(mm) 19.90±0.20 B1(mm) 13.90±0.20 B2(mm) 12.76±0.20 B3(mm) 3.80±0.20 C(mm) 20.00±0.30 C1(mm) 3.50±0.20 C2(mm) 16.50±0.30 D(mm) 5.45(TYP) D1 2.0 ±0.20 D2 3.0±0.20 D3 1.00±0.20 E(mm) 4.80±0.20 E1(mm) 1.50± +0.15 -0.05 E2(mm) 1.40±0.20 F(mm) 18.70±0.20 G(mm) φ(mm) 0.60 +0.15 -0.05 3.20±0.10 4/4