SemiWell Semiconductor SBR13003A High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c ◆ Very High Switching Speed (Typical [email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical [email protected]/0.25A) ◆ Wide Reverse Bias S.O.A ○ 3.Emitter General Description TO-126 This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. 1 2 3 Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V VEBO Emitter-Base Voltage ( IC = 0 ) 9.0 V Collector Current 1.5 A Collector Peak Current ( tP ＜ 5 ms ) 3.0 A Base Current 0.75 A IBM Base Peak Current ( tP ＜ 5 ms ) 1.5 A PC Total Dissipation at TC = 25 °C 40 W - 65 ~ 150 °C 150 °C Value Units 3.12 °C/W 89 °C/W IC ICM IB TSTG TJ Storage Temperature Max. Operating Junction Temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Mar, 2006. Rev. 0 1/5 SBR13003A Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Parameter Condition Min Typ Max Units - - 1.0 5.0 mA 400 - - V Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 1.5A IB = 0.1A IB = 0.25A IB = 0.5A - - 0.3 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IB = 0.1A IB = 0.25A - - 1.0 1.2 V hFE DC Current Gain IC = 0.5A IC = 1.0A VCE = 2V VCE = 2V 10 5 - 30 25 ton ts tf Resistive Load Turn-On Time Storage Time Fall Time IC = 1.0A IB1 = 0.2A 0.2 1.5 0.15 1.0 3.0 0.4 ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V - 2.0 0.12 4.0 0.3 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 °C - 2.4 0.15 5.0 0.4 ㎲ ICEV VCC = 125V IB2 = - 0.2A - TP = 25㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% SBR13003A-1 Hfe 13-20(Ic = 0.5A VCE = 2V) SBR13003A-2 Hfe 18-26(Ic = 0.5A VCE = 2V) 2/5 TC = 100 °C ㎲ Fig.1 DC CURRENT GAIN 100 h FE, DC CURRENT GAIN VCE=2V 10 1 0.1 0.01 0.1 1 10 VBE(S),VCE(S)[V],SATURATION VOLTAGE SBR13003A Fig. 2 SATURATION VOLTAGE 10 Ic=4IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 Ic[A], COLLECTOR CURRENT 1 10 Ic[A], COLLECTOR CURRENT Fig.3. SWICHING TIME Fig. 4 SAFE OPERATING AREA 10 Ic[A], COLLECTOR CURREN 10 Vcc=125V Ic=5IB tstg ts,tf[㎲], TIME 0.1 1 tf 0.1 10u s 10 0u 1m s s Icmax(pulse) Icmax(DC) 1 0. 1 0.01 0.01 0.1 1 Ic[A], COLLECTOR CURRENT 1 10 100 1000 VCE[V], COLLECTOR EMITTER VOLTAGE Fig. 5 POWER DERATING 50 40 30 20 10 0 0 50 100 150 200 3/5 SBR13003A Inductive Load Switching & RBSOA Test Circuit LC f IC IB 1 IB VCE D .U .T R BB V C la m p VCC V B E(o ff) Resistive Load Switching Test Circuit RC IC IB 1 IB VCE D .U .T R BB VCC V B E(o ff) 4/5 SBR13003A TO-126 Package Dimension mm Dim. Min. Inch Typ. Max. Min. Typ. Max. A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 H 0.047 0.059 2.3 I 0.091 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 φ 3.2 0.126 D A E B φ G F L 3 2 C 1. Base 2. Collector 3. Emitter 1 J H I 5/5 K