SPC5604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC5604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES APPLICATIONS Power Management in Note book Battery Powered System DC/DC Converter LCD Display inverter PIN CONFIGURATION ( TO-252-5L ) ( TO-252-4L ) N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-5L package design PART MARKING 2012/10/22 Ver.2 Page 1 SPC5604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Description(TO-252-5L) Description(TO-252-4L) 1 Source 1 Source 1 2 Gate 1 Gate 1 3 Drain1/Drain2 Drain 4 Source 2 Source 2 5 Gate 2 Gate 2 Part Number Package Part Marking SPC5604T255RGB T0-252-5L SPC5604 SPC5604T254RGB T0-252-4L SPC5604 ORDERING INFORMATION ※ SPC5604T255RGB: 13” Tape Reel ; Pb – Free ; Halogen – Free ※ SPC5604T254RGB :13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 40 -40 V Gate –Source Voltage VGSS ±20 ±20 V 10.0 -10.0 7.0 25 2.3 2.5 -7.0 -25 -2.3 2.8 1.6 1.8 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current IDM Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2012/10/22 Ver.2 ID IS PD T ≤ 10sec Steady State RθJA 50 80 A A W ℃ ℃ -55/150 -55/150 TJ TSTG A 52 80 ℃/W Page 2 SPC5604 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( NMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) 40 0.5 1.0 VDS=0V,VGS=±20V VDS=32V,VGS=0V VDS=32V,VGS=0V TJ=85℃ VDS= 5V,VGS =4.5V Drain-Source On-Resistance RDS(on) Forward Transconductance gfs VGS= 10V,ID=10A VGS=4.5V,ID= 8A VGS=2.5V,ID= 6A VDS=15V,ID=6.2A Diode Forward Voltage VSD IS=2.3A,VGS =0V ±100 1 10 10 V nA uA A 0.018 0.022 0.026 13 0.024 0.028 0.032 0.8 1.2 10 14 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS=20V,VGS=4.5V ID= 5A 2.8 nC 3.2 850 VDS=20V,VGS=0V f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 75 td(on) 6 12 10 20 20 36 6 12 Turn-On Time Turn-Off Time 2012/10/22 Ver.2 tr td(off) tf VDD=20V,RL=4Ω ID≡5.0A,VGEN=10V RG=1Ω 110 pF Page 3 nS SPC5604 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( PMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) -40 -0.8 -2.5 VDS=0V,VGS=±20V VDS=-32V,VGS=0V VDS=-32V,VGS=0V TJ=85℃ VDS= -5V,VGS =-4.5V ±100 -1 -10 -10 0.032 0.042 gfs 0.028 0.038 13 VSD IS=-2.3A,VGS =0V -0.8 -1.2 13 20 RDS(on) Forward Transconductance Diode Forward Voltage nA uA A VGS=-10V,ID=-10A VGS=-4.5V,ID=- 8A VDS=-15V,ID=-5.7A Drain-Source On-Resistance V Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS=-20V,VGS=-4.5V ID= -5.0A 4.5 nC 6.5 1100 VDS=-20V,VGS=0V f=1MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 115 td(on) 40 80 55 100 30 60 12 20 Turn-On Time Turn-Off Time 2012/10/22 Ver.2 tr td(off) tf VDD=-20V,RL=4Ω ID≡-5.0A,VGEN=-4.5V RG=1Ω 145 pF Page 4 nS SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2012/10/22 Ver.2 Page 5 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2012/10/22 Ver.2 Page 6 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2012/10/22 Ver.2 Page 7 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2012/10/22 Ver.2 Page 8 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2012/10/22 Ver.2 Page 9 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2012/10/22 Ver.2 Page 10 SPC5604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2012/10/22 Ver.2 Page 11 SPC5604 N & P Pair Enhancement Mode MOSFET TO-252-5L PACKAGE OUTLINE 2012/10/22 Ver.2 Page 12 SPC5604 N & P Pair Enhancement Mode MOSFET TO-252-4L PACKAGE OUTLINE 2012/10/22 Ver.2 Page 13 SPC5604 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/10/22 Ver.2 Page 14