SPC4533W N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4533W is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z LCD Display inverter FEATURES N-Channel 30V/10A,RDS(ON)= 25mΩ@VGS= 10V 30V/8.0A,RDS(ON)= 36mΩ@VGS= 4.5V P-Channel -30V/-6.0A,RDS(ON)= 42mΩ@VGS=- 10V -30V/-3.0A,RDS(ON)= 78mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING PIN DESCRIPTION 2011/06/03 Ver.1 Page 1 SPC4533W N & P Pair Enhancement Mode MOSFET Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 5 D2 Gate 2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 ORDERING INFORMATION Part Number Package SPC4533WS8RGB SOP- 8P Part Marking SPC4533W ※ SPC4533WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 30 -30 V Gate –Source Voltage VGSS ±20 ±20 V 10 -6.0 6 -4.0 20 -12 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2011/06/03 Ver.1 ID IDM TA=25℃ A A PD 2.0 W TJ TSTG RθJA -55/150 -55/150 ℃ ℃ ℃/W 80 80 Page 2 SPC4533W N & P Pair Enhancement Mode MOSFET N CHANNEL ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=1A,VGS =0V RDS(on) 1.0 V 2.5 VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=55℃ VGS= 10V,ID=10A VGS=4.5V,ID=5.6A VDS=15V,ID=10A Drain-Source On-Resistance 30 ±100 1 nA uA 5 25 A 18 25 10 25 36 mΩ S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/06/03 Ver.1 VDS=20V,VGS=4.5V ID= 10A td(off) tf nC 1.4 2.2 VDS=15VGS=0V f=1MHz td(on) tr 7.2 570 pF 81 65 4.1 VDD=12V, ID=5.0A, VGEN=10V, RG=3.3Ω 9.8 nS 15.5 6.1 Page 3 SPC4533W N & P Pair Enhancement Mode MOSFET P CHANNEL ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≦-5V,VGS=-10V Forward Transconductance gfs Diode Forward Voltage VSD IS=-6A,VGS=0V RDS(on) -1.0 -2.5 VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=55℃ VGS=- 10V,ID=-6A VGS=- 4.5V,ID=-3A VDS=-10.0V,ID=-6A Drain-Source On-Resistance -30 ±100 -1 -5 -6 V nA uA A 0.035 0.065 6 0.042 0.078 Ω S -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/06/03 Ver.1 VDS=-20V, VGS=-4.5V ID=-6A td(off) tf nC 2.7 3.1 VDS=-24V,VGS=0V f=1MHz td(on) tr 6.4 650 pF 270 104 9 VDD=-12V, ID=-5.0A, VGEN=-10V RG=3.3Ω 16 ns 21 22 Page 4 SPC4533W N & P Pair Enhancement Mode MOSFET N CHANNEL TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics of Diode Fig. 4 Gate Charge Characteristics Fig. 5 Vgs vs. Junction Temperature Fig. 6 On-Resistance vs. Junction Temperature 2011/06/03 Ver.1 Page 5 SPC4533W N & P Pair Enhancement Mode MOSFET N CHANNEL TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedence Fig. 10 Switching Time Waveform 2011/06/03 Ver.1 Fig. 11 Unclamped Inductive Waveform Page 6 SPC4533W N & P Pair Enhancement Mode MOSFET P CHAEENL TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward characteristics of Diodes Fig. 4 Gate Charge Characteristics Fig. 5 Vgs vs. Junction Temperature Fig. 6 On-Resistance vs Junction Temp 2011/06/03 Ver.1 Page 7 SPC4533W N & P Pair Enhancement Mode MOSFET P CHANNEL TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2011/06/03 Ver.1 Fig. 11 Unclamped Inductive Waveform Page 8 SPC4533W N & P Pair Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2011/06/03 Ver.1 Page 9 SPC4533W N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/06/03 Ver.1 Page 10