SPP5413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPP5413 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS z Power Management in Note book z Powered System z DC/DC Converter z Load Switch FEATURES -40V/-10A,RDS(ON)= 26mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 36mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PIN CONFIGURATION TO-252 PART MARKING 2011/09/ 26 Ver.3 Page 1 SPP5413 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPP5413T252RGB TO-252 ※ SPP5413T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Marking SPP5413 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID -18 -10 A IDM -30 A IS -2.3 A PD 2.8 1.8 W EAS 129 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 43A , VDD = 20V. ) Operating Junction Temperature 2011/09/ 26 Ver.3 Page 2 SPP5413 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V Forward Transconductance gfs Diode Forward Voltage VSD IS=-2.3A,VGS =0V RDS(on) -0.8 -2.5 VDS=0V,VGS=±20V VDS=-32V,VGS=0V VDS=-32V,VGS=0V TJ=55℃ VGS=-10V,ID=-10A VGS=-4.5V,ID=- 8A VDS=-15V,ID=-5.7A Drain-Source On-Resistance -40 ±100 -1 -10 -10 V nA uA A 0.021 0.030 13 0.026 0.036 -0.8 -1.2 13 20 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/09/ 26 Ver.3 VDS=-20V,VGS=-4.5V ID= -5.0A 6.5 VDS=-20V,VGS=0V f=1MHz td(on) tr td(off) tf nC 4.5 VDD=-20V,RL=4Ω ID≡-5.0A,VGEN=-4.5V RG=1Ω 1100 pF 145 115 40 80 55 100 30 60 12 20 Page 3 nS SPP5413 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/ 26 Ver.3 Page 4 SPP5413 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/ 26 Ver.3 Page 5 SPP5413 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/ 26 Ver.3 Page 6 SPP5413 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/ 26 Ver.3 Page 7 SPP5413 P-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2011/09/ 26 Ver.3 Page 8 SPP5413 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 2011/09/ 26 Ver.3 Page 9 SPP5413 P-Channel Enhancement Mode MOSFET Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/09/ 26 Ver.3 Page 10