TAK_CHEONG TFF10N60

TAK CHEONG
®
N-Channel Power MOSFET
10A, 600V, 0.75Ω
1
GENERAL DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
FEATURES
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
1 = Gate
2 = Drain
3 = Source
2
3
TO-220FP
DEVICE MARKING DIAGRAM
L xxxx
TFF
XXXX
D
G
S
ABSOLUTE MAXIMUM RATINGS (T C =25°C, unless otherwise noted )
Symbol
Parameter
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFFXXXX = Device Type
Value
Units
VDSS
Drain- Source Voltage
600
V
VGSS
Gate-Source Voltage
±20
V
Drain Current
10
A
Continuous Drain Current Tc=100℃
6.4
A
Drain Current Pulsed
40
A
45
W
0.36
W/℃
ID
IDM
PD
Power Dissipation
(Note 2)
Derating Factor above 25℃
EAS
Single Pulsed Avalanche Energy
(Note 1)
300
mJ
EAR
Repetitive Avalanche Energy
(Note 2)
30
mJ
150
℃
- 55 to +150
℃
Value
Unit
2.78
℃/W
62
℃/W
TJ
Tstg
Operating Junction Temperature
Storage Temperature Range
Notes:
1. L=10mH, I AS=8.0A, VDD=50V, RG=50Ω, Starting T J=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Number: DB-221
May 2010, Revision A
Page 1
TFF10N60
S EM ICOND UCTOR
TAK CHEONG
®
S EM ICOND UCTOR
ELECTRICAL CHARACTERISTICS
Off Characteristics (TA = 25°C unless otherwise noted)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Sounce Breakdown Voltage
VGS = 0V, ID = 250uA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
--
25
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20V, VDS = 0V
--
--
10
uA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20V, VDS = 0V
--
--
-10
uA
Min.
Typ.
Max.
Unit
2.0
--
4.0
V
--
0.63
0.75
Ω
Min.
Typ.
Max.
Unit
--
1430
--
pF
--
160
---
pF
--
28
--
pF
Min.
Typ.
Max.
Unit
--
20
--
nS
--
20
--
nS
--
55
--
nS
On Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
VGS (th)
Gate Threshold Voltage
VDS = VGS , ID = 250uA
RDS(ON)
On-Resistance
VGS = 10V, ID = 5A
Dynamic Characteristics
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
Symbol
td(on)
Parameter
Test Conditions
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDD = 300V, ID = 10A,
VGS = 10V, R G = 4.7Ω
(Note 3 & 4)
tr
Turn-Off Fall Time
--
30
--
nS
Qg
Total Gate Charge
VDS = 480V, ID = 10A,
--
60
70
nC
Qgs
Gate-Source Charge
VGS = 10V
--
12
--
nC
Qgd
Gate-Drain Charge
(Note 3 & 4)
--
28
--
nC
Min.
Typ,
Max.
Unit
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
VSD
Drain-Source Diode Forward Voltage
--
--
1.5
V
Trr
Reverse Recovery Time
--
600
--
nS
Qrr
Reverse Recovery Charge
--
4.3
--
nC
IRRM
Reverse Recovery Current
--
13
--
A
VGS = 0V, IS = 10A
VGS = 0V, IS = 10A,
dIF / dt = 100A/uS
(Note 3)
Notes:
3. Pulse Test: Pulse width 380us, Duty cycle ≤ 2%.
4. Basically not affected by working temperature.
Number: DB-221
May 2010, Revision A
Page 2
TAK CHEONG
®
S EM ICOND UCTOR
TYPICAL CHARACTERISTICS
Number: DB-221
May 2010, Revision A
Page 3
TAK CHEONG
®
S EM ICOND UCTOR
Number: DB-221
May 2010, Revision A
Page 4
TAK CHEONG
®
S EM ICOND UCTOR
Number: DB-221
May 2010, Revision A
Page 5
TAK CHEONG
®
S EM ICOND UCTOR
TEST CIRCUIT AND WAVEFORM
Number: DB-221
May 2010, Revision A
Page 6
TAK CHEONG
®
S EM ICOND UCTOR
TO220AB PACKAGE OUTLINE
DIM
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A1
2.7
3.3
0.106
0.130
A2
15.0
15.7
0.591
0.618
A4
6.2
6.6
0.244
0.260
b
0.5
0.9
0.020
0.035
b1
0.9
1.2
0.035
0.047
b2
1.0
1.2
0.039
0.047
c
0.4
0.6
0.016
0.024
D
9.8
10.3
0.386
0.406
e
2.34
2.74
0.092
0.108
E
E1
4.3
2.5
4.6
2.9
0.169
0.098
0.181
0.114
F
2.6
3.0
0.102
0.118
L
10.3
10.7
0.406
0.421
ØP
3.0
3.4
0.118
0.134
2.7
0.091
0.106
Q
2.3
Note: Single Gauge
Number: DB-221
May 2010, Revision A
Page 7
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A