TAK CHEONG ® N-Channel Power MOSFET 4.1A, 600V, 2.5Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. 3 TO-220FP DEVICE MARKING DIAGRAM L xxxx TFF XXXX Features ● ● ● ● L = Tak Cheong Logo xxyy = Monthly Date Code TFFXXXX = Device Type D Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. G S ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol Parameter Value Units VDSS Drain- Source Voltage 600 V VGSS Gate-Source Voltage ±30 V Drain Current 4.1 A Drain Current Pulsed 16.4 A 39 W 0.31 W/℃ ID IDM PD Power Dissipation (Note 2) Derating factor above 25℃ EAS Single Pulsed Avalanche Energy (Note 1) 330 mJ EAR Repetitive Avalanche Energy (Note 2) 7.3 mJ 150 ℃ - 55 to +150 ℃ Value Unit TJ Tstg Operating Junction Temperature Storage Temperature Range Notes: 1. L=30mH, IAS=4.4A, VDD=85V, RG=25Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 3.18 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W Number: DB-196 July 2011, Revision C Page 1 TFF4N60 SEM ICON DU CTO R TAK CHEONG ® SEM ICON DU CTO R ELECTRICAL CHARACTERISTICS Off Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS Parameter Test Conditions Min. Typ. Max. Unit Drain-Sounce Breakdown Voltage VGS = 0V, ID = 250uA 600 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics (TA = 25°C unless otherwise noted) Symbol Min. Typ. Max. Unit VGS (th) Gate Threshold Voltage Parameter VDS = VGS , ID = 250uA Test Conditions 2.0 -- 4.0 V RDS(ON) On-Resistance VGS = 10V, ID = 2.05A -- 2.0 2.5 Ω Min. Typ. Max. Unit Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS = 25V, VGS = 0V, f = 1.0MHz -- 570 741 pF -- 64 83 pF -- 14 18 pF Min. Typ. Max. Unit -- 25 32 nS -- 54 70 nS -- 120 157 nS Switching Characteristics Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time Test Conditions VDD = 300V, ID = 4.1A, RG = 25Ω (Note 3 & 4) tr Turn-Off Fall Time -- 34 45 nS Qg Total Gate Charge VDS = 480V, ID = 4.1A, -- 19 25 nC Qgs Gate-Source Charge VGS = 10V -- 2.9 -- nC Qgd Gate-Drain Charge (Note 3 & 4) -- 8.2 -- nC Min. Typ, Max. Unit -- -- 4.1 A Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16.4 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.1A -- -- 1.4 V Trr Reverse Recovery Time VGS = 0V, IS = 4.1A, -- 560 -- nS -- 1.78 -- uC Qrr dIF / dt = 100A/uS Reverse Recovery Charge (Note 3) Notes: 3. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 4. Basically not affected by working temperature. Number: DB-196 July 2011, Revision C Page 2 TAK CHEONG ® SEM ICON DU CTO R TYPICAL CHARACTERISTICS Number: DB-196 July 2011, Revision C Page 3 TAK CHEONG ® SEM ICON DU CTO R Fig 9. Fig 10. Fig 11. Number: DB-196 July 2011, Revision C Page 4 TAK CHEONG ® SEM ICON DU CTO R Number: DB-196 July 2011, Revision C Page 5 TAK CHEONG ® SEM ICON DU CTO R Number: DB-196 July 2011, Revision C Page 6 TAK CHEONG ® SEM ICON DU CTO R TO220FP PACKAGE OUTLINE DIM MILLIMETERS INCHES MIN MAX MIN MAX A1 2.7 3.3 0.106 0.130 A2 15.0 15.7 0.591 0.618 A4 6.2 6.6 0.244 0.260 b 0.5 0.9 0.020 0.035 b1 0.9 1.2 0.035 0.047 b2 1.0 1.2 0.039 0.047 c 0.4 0.6 0.016 0.024 D 9.8 10.3 0.386 0.406 e 2.34 2.74 0.092 0.108 E 4.3 4.6 0.169 0.181 E1 2.5 2.9 0.098 0.114 F 2.6 3.0 0.102 0.118 0.421 L 10.3 10.7 0.406 ØP 3.0 3.4 0.118 0.134 Q 2.3 2.7 0.091 0.106 Note: Single Gauge Number: DB-196 July 2011, Revision C Page 7 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A