TAK CHEONG ® N-Channel Power MOSFET 50A, 60V, 0.023Ω 1 GENERAL DESCRIPTION This N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. 1 = Gate 2 = Drain 3 = Source 2 3 TO-220AB DEVICE MARKING DIAGRAM L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type D FEATURES ● ● ● Avalanche energy specified Gate Charge (Typical 36nC) High Ruggedness G S ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD Parameter Value Units Drain- Source Voltage 60 V Gate-Source Voltage ±25 V Drain Current 50 A Drain Current Pulsed 200 A 120 W 0.8 W/℃ Power Dissipation (Note 2) Derating Factor above 25℃ EAS Single Pulsed Avalanche Energy (Note 1) 642 mJ EAR Repetitive Avalanche Energy (Note 2) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns 150 ℃ - 55 to +150 ℃ Value Unit TJ Tstg Operating Junction Temperature Storage Temperature Range Notes: 1. L=300uH, IAS=50A, VDD=25V, RG=50Ω, Starting TJ=25℃. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. ISD ≤ 50A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ=25℃. THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1.25 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W Number: DB-228 August 2011, Revision A Page 1 TFP50N06 SEM ICON DU CTO R TAK CHEONG ® SEM ICON DU CTO R ELECTRICAL CHARACTERISTICS Off Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS Parameter Test Conditions Drain-Sounce Breakdown Voltage VGS = 0V, ID = 250uA Min. Typ. Max. Unit 60 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V -- -- 1 uA IGSSF Gate-Body Leakage Current, Forward VGS = 25V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V -- -- -100 nA Min. Typ. Max. Unit 2.0 -- 4.0 V -- 0.017 0.023 Ω Min. Typ. Max. Unit On Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions VGS (th) Gate Threshold Voltage VDS = VGS , ID = 250uA RDS(ON) On-Resistance VGS = 10V, ID = 25A Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS = 25V, VGS = 0V, f = 1.0MHz -- --- 1460 pF -- --- 580 pF -- --- 90 pF Min. Typ. Max. Unit -- 50 -- nS -- 165 -- nS -- 78 -- nS Switching Characteristics Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time Test Conditions VDD = 30V, ID = 25A, RG = 25Ω (Note 4 & 5) tr Turn-Off Fall Time -- 60 -- nS Qg Total Gate Charge VDS = 160V, ID = 8.0A, -- 36 45 nC Qgs Gate-Source Charge VGS = 10V -- 8.5 -- nC Gate-Drain Charge (Note 4 & 5) -- 12 -- nC Test Conditions Min. Typ, Max. Unit -- -- 50 A -- -- 200 A Qgd Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter IS Continuous Drain-Source Current ISM Pulsed Drain-Source Current Integral Reverse p-n Junction Diode in the MOSFET VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.5 V Trr Reverse Recovery Time VGS = 0V, IS = 50A, -- 95 -- nS -- 250 -- uC Qrr dIF / dt = 100A/uS Reverse Recovery Charge (Note 4) Notes: 4. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 5. Basically not affected by working temperature. Number: DB-228 August 2011, Revision A Page 2 TAK CHEONG ® SEM ICON DU CTO R TYPICAL CHARACTERISTICS Number: DB-228 August 2011, Revision A Page 3 TAK CHEONG ® SEM ICON DU CTO R Number: DB-228 August 2011, Revision A Page 4 TAK CHEONG ® SEM ICON DU CTO R Number: DB-228 August 2011, Revision A Page 5 TAK CHEONG ® SEM ICON DU CTO R Number: DB-228 August 2011, Revision A Page 6 TAK CHEONG ® SEM ICON DU CTO R TO220AB PACKAGE OUTLINE DIM MILLIMETERS MIN MAX INCHES MIN MAX A 3.60 4.80 0.142 0.189 A1 1.20 1.40 0.047 0.055 0.114 A2 2.03 2.90 0.080 b 0.40 1.00 0.016 0.039 b2 1.20 1.78 0.047 0.070 c 0.36 0.60 0.014 0.024 D 14.22 16.50 0.560 0.650 e 2.34 2.74 0.092 0.108 E 9.70 10.60 0.382 0.417 H1 5.84 6.85 0.230 0.270 L 12.70 14.70 0.500 0.579 L1 2.70 3.30 0.106 0.130 ØP 3.50 4.00 0.138 0.157 Q 2.54 3.40 0.100 0.134 NOTE: Above package outline conforms to JEDEC TO-220AB Number: DB-228 August 2011, Revision A Page 7 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A