TIGER ELECTRONIC CO.,LTD
Sensitive Gate Silicon Gontrolled Rectifierc
MCK228
S0T-89
I
t
nit:m
Features
O
Repetitive Peak Off-State Voltage: 600V
o
R.M.S On-State Curent ( lT(RMs)= 1.5 A )
O
Low On-State Voltage
(1.2V(Tp.@lTM)
DE
2. Anode
I
Absolute Maximum Ratings
Cathode
T;
= 25C
Parameter
Symbol
Rating
Unt
VDRM
Peak Repetitive
Foruad and Reverse Blocking Voftage
and
600
VRRM
Foruard Curent Rus (180C Conduction Angles)
lr(nus)
1.5
A
On-State Rus Cunent, 180C Condudion Angles; Tc = 93C)
lrAV)
10
A
Peak Non+epetitive Surge Curlent('ll2 Cycle, Sine Wave 60 Hz )
lrs,r
15
A
Oircuit Fusing Considerations (t = 8.3 ms)
)eak Gate Power- Forward, (fc !gC. Pulse Width{1.0
=
:orward Avenage Gate Power,(Tc 25C
=
:onarard Peak Gate Current
)eak Gate Voltaqe
Reverse
-
,t=
8.3 ms)
rr
s)
h
0.9
A2s
PGM
0.5
W
PGF(AV)
0.1
W
GM
o2
A
VGRM
5.0
fhermal Resistance, Jundion to Case
R oJc
15
fhermal Resistance, Jundion to Ambient
Ren
125
c/w
c/w
TJ
40 lo +125
'a
Operating Junction Temperature Ran ge
Storaqe Temoerature Ranoe
Tsts
40 to
+'l 50
MCK22A
I
Electrical Characteristics (IC = 25C, unless otherwise noted.)
Slocking
Curent
Testconditons
Symbol
Parameter
reak Foruard or Reverse Tc = 25C
Tc ='1257
reak Foruard On-State Voltaqe*1
GT
200
Anode Voltage = 6 V, Rr- ='l 00 Ohms,Tc=4OC
500
VGT
Vrx = 7 Vdc. RL = 100 Ohms
Vlx = 12Vdc,
VGM=0.67VDRM
dv/dt
1.0 ms, Duty C),cle
*2 Rer currcnt is not induded in measurement.
= 100 Ohms,T,l
{
1%.
T.t
uA
0.2
2
= 125C
uA
0.8
= 125'C
Anode Voltaoe=12V
IH
<
Rr-
Unit
1.7
Anode Voftage = 6 V, RL = 100 Ohms
VGD
Pulse Test: Pulse Width
10
1.2
Sate Non-Tdqqer Voltage
loldinq Current
Max
200
lru=3APeak
Vru
3ate Triooer Voltaoe (Continuous dc)
.'l
Typ
lonu, Innl Vnx = Rated Vonlt orVnnu
3ate Trigger Cunent (Continuous dc)'2
lritical RateofRise of Ofi-State Voltaqe
Min
200
50
mA
V/u
s
MCK22-8
Fig
Fig 2. Maximum Case Temperature
L Gate Characteristics
t*lO
"-
r"
E
trt
g
o
,tI
E
ra
,L
=
oL
o
.9
I
=1s0'
I
o
3
o
O
I
'r
'r
*r
,o
\
I
t
A : Conduction Angle
I
02
06
04
08
Average On-Sate GJrent
10
12
[4
Fig 4. Thermal Response
o
o
o
E
,P
Ero
o
- ;=-
F
o
o
F
08
12
2.O
16
Instantaneous On-State Voltage
too
21
too
15
12
o
N^^
to'
too
Fig 6. Typical Gate Trigger Gurrent vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
o
to'
Time (sec)
M
\
10
\r
03
50
00
50
Jundion Tefiperature ['Cl
50
Junction Tefiperature
["q
1t
MCK22A
Fig 8. Power Dissipation
Fig 7. Typical Holding Current
10
7
o
6
o
'6
?s
E
P
f-
-L
.!2
o
c
I
53
o
|
_J_
E
E
o
%
=
o
}
o-
o
/
e
o
!,2
o
I
xo
#
=
40
-m
o
20 ,{o m
Jundion Tenperdurc
8o lm
[t]
ln
1,O
00
o.4
06
AveragBOFSdeOrent
08
[4
l