isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 500 V 400 V 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A Base Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 50 IB B PC TJ Tstg W Collector Power Dissipation@Ta=25℃ 1.75 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4106 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current 10 μA hFE-1 DC Current Gain hFE-2 DC Gurrent Gain hFE-3 DC Gurrent Gain fT COB ton Turn-on Time tstg Storage Time B n c . i m e s c is IC= 0.8A ; VCE= 5V 15 IC= 4A ; VCE= 5V 10 IC= 10mA ; VCE= 5V 10 15-30 20-40 30-50 isc Website：www.iscsemi.cn 50 MHz IE= 0;VCB= 10V; ftest= 1.0MHz 80 pF hFE-1 Classifications N UNIT 20 Fall Time M MAX IC= 0.8A ; VCE= 10V IC= 5A ;IB1= 1A; IB2= -2A RL= 40Ω; VCC= 200V L TYP. B w. w w Output Capacitance MIN VEB= 5V; IC=0 Current-Gain—Bandwidth Product Switching times tf CONDITIONS 2 0.5 μs 2.5 μs 0.3 μs