ETC SCN2C60

SCN2C60
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Symbol
2. Gate
Features
▼
○
○
3. Anode
○
1. Cathode
Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 1.5 A )
◆ Low On-State Voltage (1.2V(Typ.)@ITM)
◆
TO-92
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave : TC = 45 °C
1.0
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
1.5
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
15
A
I2t for Fusing
t = 8.3ms
0.9
A 2s
Forward Peak Gate Power Dissipation
TA=25°C, Pulse Width ≤ 1.0㎲
2
W
Forward Average Gate Power Dissipation
TA=25°C, t = 8.3ms
0.1
W
I2 t
PGM
PG(AV)
IFGM
Forward Peak Gate Current
1
A
VRGM
Reverse Peak Gate Voltage
5.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TJ
TSTG
1/5
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCN2C60
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Items
Ratings
Conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
─
─
─
─
10
200
㎂
VTM
Peak On-State Voltage (1)
( ITM =3 A, Peak )
─
1.2
1.7
V
IGT
Gate Trigger Current (2)
TC = 25 °C
TC = - 40 °C
─
─
─
─
200
500
㎂
VGT
Gate Trigger Voltage (2)
TC = 25 °C
TC = - 40 °C
─
─
─
─
0.8
1.2
V
VGD
Non-Trigger Gate Voltage (1)
0.2
─
─
V
dv/dt
Critical Rate of Rise Off-State
Voltage
200
─
─
V/㎲
di/dt
Critical Rate of Rise On-State
Current
50
A/㎲
VAK = 6 V, RL=100 Ω
VD = 7 V, RL=100 Ω
VAK = 12 V, RL=100 Ω TC = 125 °C
VGM = 0.67VDRM,
Exponential waveform , RGK = 1000 Ω
TJ = 125 °C
ITM = 3A, Ig = 10mA
VAK = 12 V, Gate Open
IH
TC = 25 °C
TC = - 40 °C
Holding Current
2
─
5.0
10
mA
Rth(j-c)
Thermal Impedance
Junction to case
─
─
50
°C/W
Rth(j-a)
Thermal Impedance
Junction to Ambient
─
─
160
°C/W
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
2/5
─
─
SCN2C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ oC]
140
1
10
VGM (5V)
Gate Voltage [V]
PGM (2W)
PG(AV) (0.1W)
0
IGM (1A)
10
25 ℃
VGD(0.2V)
120
100
θ = 180
60
-1
0
10
1
10
2
10
3
10
10
π
360°
20
θ
0
0.0
4
10
: Conduction Angle
0.2
0.4
0.6
0.8
1.0
1.2
3
10
Average On-State Current [A]
Gate Current [mA]
Fig 4. Thermal Response
Fig 3. Typical Forward Voltage
1
Transient Thermal Impedance [Normalized]
10
Instantaneous On-State Current [A]
2π
θ
40
-1
10
o
80
o
TJ = 125 C
1
o
TJ = 25 C
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.01
-1
10
1.8
0
1
10
2
10
Instantaneous On-State Voltage [V]
10
10
4
Time (msec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
2.0
1.5
o
o
IGT (t C)
1.0
IGT (25 C)
o
VGT (t C)
VGT (25 oC)
1.6
1.2
0.8
0.4
0.5
-50
0
50
100
o
Junction Temperature [ C]
150
0.0
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
SCN2C60
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
9
8
7
Max. Average Power Dissipation [W]
2.0
Holding Current [mA]
6
5
4
3
2
1
-50
-25
0
25
50
75
Junction Temperature [℃]
4/5
100
125
150
θ = 180
1.5
θ = 30
o
θ = 60
o
θ = 90
o
θ = 120
o
o
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
Average On-State Current [A]
1.0
1.2
SCN2C60
TO-92 Package Dimension
mm
Inch
Dim.
Min.
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. Cathode
2. Gate
3. Anode
J
5/5