TC1304 REV5_20070502 Low Noise and Medium Power GaAs FETs FEATURES PHOTO ENLARGEMENT ! Low Noise Figure: NF = 0.8 dB Typical at 12 GHz ! High Associated Gain: Ga = 11 dB Typical at 12 GHz ! High Dynamic Range: 1 dB Compression Power P-1 = 24.5 dBm at 12 GHz ! Breakdown Voltage: BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 600 µm ! All-Gold Metallization for High Reliability ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1304 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions NF Noise Figure at VDS = 4 V, IDS = 50 mA, f Ga Associated Gain at VDS = 4 V, IDS = 50 mA, f MIN = 12GHz = 12GHz P1dB Output Power at 1dB Gain Compression Point, f = 12GHz, VDS = 6 V, IDS= 80 mA MAX 0.8 1.0 UNIT dB 10 11 dB 23.5 24.5 dBm GL Linear Power Gain, f 10 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 180 mA gm Transconductance at VDS = 2 V, VGS = 0 V 200 mS VP Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA BVDGO Rth = 12GHz, VDS = 6 V, IDS= 80 mA TYP Drain-Gate Breakdown Voltage at IDGO = 0.3 mA Thermal Resistance 9 9 -1.0* Volts 12 Volts 60 °C/W Note: * For the tight control of the pinch-off voltage . TC1304’s are divided into 3 groups: (1) TC1304P0710 : Vp = -0.7V to -1.0V (2) TC1304P0811 : Vp = -0.8V to -1.1V (3) TC1304P0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/6 TC1304 REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 50 mA Symbol Parameter Rating Frequency NFopt GA Γopt Rn/50 VDS Drain-Source Voltage 7.0 V (GHz) (dB) (dB) MAG ANG VGS Gate-Source Voltage -3.0 V 2 0.32 20.5 0.86 13 0.26 IDS Drain Current IDSS 4 0.46 17.6 0.72 37 0.16 IGS Gate Current 600 µA 6 0.57 15.3 0.60 61 0.14 Pin RF Input Power, CW 24 dBm 8 0.68 13.7 0.53 90 0.11 PT Continuous Dissipation 800 mW 10 0.88 12.7 0.48 117 0.08 TCH Channel Temperature 175 °C 12 0.90 11.9 0.47 145 0.05 TSTG Storage Temperature - 65 °C to +175 °C 14 1.04 11.4 0.48 170 0.03 16 1.14 10.5 0.49 -166 0.03 18 1.25 9.8 0.52 -148 0.06 CHIP DIMENSIONS 320 ! 12 D 340 ! 12 S G S Units: Micrometers Gate Pad: 75 x 70 Chip Thickness: 100 Drain Pad: 80 x 70 Source Pad: 75 x 80 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/6 TC1304 REV5_20070502 0.2 75 30 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 45 0. 4 0.2 Swp Max 18 GHz 60 2. 0 15 0 90 0.8 6 0. 0 3. 0 4. 0 5. S11 0 12 Mag Max 0.09 5 13 Swp Max 18GHz 10.0 0 VDS = 4 V, IDS = 50 mA 105 1.0 TYPICAL SCATTERING PARAMETERS (TA=25 °C) 0 -180 -15 -10.0 -105 1.0 2. 0 0.8 6 0. 45 30 Swp Min 2 GHz Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0 0 0.4 10.0 165 0.2 60 75 -1 20 -1 35 .0 -2 -1.0 5 13 0. 4 -0 .6 -0.8 90 Swp Max 18 GHz 15 0 -3 0 0 -6 0.03 Per Div -75 Swp Min 2GHz -90 105 0 12 Mag Max 10 S12 50 -1 5 -4 .4 -0 -165 -3 .0 4 -5..0 0 2 -0. -180 -15 -3 0 S11 S21 .0 -2 -1.0 Swp Min 2 GHz -0.8 -0 .6 -105 -1 20 -1 35 5 -4 0 -6 -75 -90 2 Per Div .4 -0 -3 .0 -4 -5..0 0 2 -0. S21 50 -1 -10.0 -165 Swp Min 2GHz FREQUENCY (GHz) MAG ANG MAG ANG MAG S12 ANG MAG S22 ANG 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.8898 0.8498 0.8279 0.8155 0.8082 0.8036 0.8006 0.7986 0.7974 0.7966 0.7962 0.7960 0.7960 0.7961 0.7964 0.7968 0.7972 -89.99 -113.21 -128.22 -138.54 -146.06 -151.80 -156.37 -160.12 -163.28 -166.01 -168.40 -170.54 -172.47 -174.23 -175.87 -177.39 -178.82 9.4335 7.2703 5.8073 4.7993 4.0762 3.5371 3.1217 2.7927 2.5263 2.3063 2.1218 1.9648 1.8297 1.7122 1.6091 1.5178 1.4364 126.22 112.17 102.40 94.95 88.85 83.59 78.89 74.57 70.54 66.73 63.08 59.58 56.19 52.90 49.69 46.56 43.50 0.0614 0.0710 0.0755 0.0780 0.0794 0.0803 0.0808 0.0813 0.0816 0.0818 0.0820 0.0821 0.0823 0.0824 0.0826 0.0828 0.0830 43.09 32.46 26.12 22.10 19.42 17.58 16.29 15.38 14.74 14.32 14.06 13.93 13.90 13.96 14.09 14.28 14.52 0.3867 0.3415 0.3169 0.3045 0.2993 0.2986 0.3009 0.3052 0.3111 0.3181 0.3260 0.3346 0.3438 0.3534 0.3634 0.3737 0.3842 -72.01 -91.67 -104.67 -113.55 -119.81 -124.37 -127.79 -130.44 -132.57 -134.34 -135.86 -137.21 -138.45 -139.61 -140.72 -141.80 -142.86 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/6 TC1304 REV5_20070502 0.2 75 45 15 165 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 60 2. 0 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 90 1.0 0.8 Mag Max 0.08 105 Swp Max 18GHz 0 12 6 0. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 6 V, IDS = 80 mA 0 -180 -15 -10.0 -105 1.0 2. 0 0.8 6 0. 45 30 Swp Min 2 GHz Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0 0 0.6 10.0 165 0.2 60 75 -1 20 -1 35 .0 -2 -1.0 90 -0.8 5 13 0. 4 -0 .6 -3 .0 -4 . -5. 0 0 Swp Max 18 GHz 15 0 -3 0 0 -6 0.02 Per Div -75 Swp Min 2GHz -90 105 0 12 Mag Max 10 S12 50 -1 5 -4 .4 -0 -165 0.4 2 -0. -180 -15 S11 S21 .0 -2 -1.0 Swp Min 2 GHz -0.8 -0 .6 -105 -1 20 -75 0 -6 -1 35 5 -4 .4 -0 -3 .0 -4 -5..0 0 -3 0 -90 2 Per Div 2 -0. S21 50 -1 -10.0 -165 Swp Min 2GHz FREQUENCY (GHz) MAG ANG MAG ANG MAG S12 ANG MAG S22 ANG 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.8887 0.8506 0.8304 0.8190 0.8123 0.8081 0.8054 0.8036 0.8024 0.8016 0.8011 0.8009 0.8008 0.8008 0.8009 0.8012 0.8015 -92.62 -115.69 -130.42 -140.49 -147.80 -153.38 -157.83 -161.48 -164.56 -167.23 -169.58 -171.67 -173.57 -175.32 -176.93 -178.44 -179.85 9.9171 7.5873 6.0381 4.9806 4.2262 3.6657 3.2350 2.8946 2.6194 2.3926 2.2027 2.0414 1.9028 1.7825 1.6770 1.5839 1.5011 124.88 110.88 101.19 93.79 87.71 82.44 77.72 73.38 69.31 65.45 61.76 58.21 54.76 51.41 48.14 44.94 41.81 0.0530 0.0608 0.0645 0.0665 0.0678 0.0686 0.0692 0.0697 0.0702 0.0706 0.0710 0.0714 0.0718 0.0723 0.0728 0.0733 0.0738 42.67 32.56 26.75 23.24 21.03 19.63 18.76 18.26 18.02 17.97 18.07 18.28 18.58 18.95 19.38 19.84 20.34 0.3809 0.3220 0.2893 0.2725 0.2653 0.2641 0.2668 0.2723 0.2795 0.2882 0.2978 0.3081 0.3189 0.3301 0.3416 0.3532 0.3649 -62.75 -79.19 -90.22 -97.99 -103.70 -108.08 -111.56 -114.43 -116.90 -119.08 -121.07 -122.91 -124.66 -126.33 -127.94 -129.51 -131.05 SMALL SIGNAL MODEL, VDS = 4 V, IDS = 50 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/6 TC1304 REV5_20070502 SCHEMATI Lg PARAMETERS Cgd Rg Rd Gm Cgs Cds Ri Ld Lg 0.04 nH Rs Rg 1.93 Ohm Ls 0.01 nH Cds 0.15 pF 2.158 Ohm Rds 105.4 Ohm Cgd 0.087 pF Rd 1.29 Ohm Gm 266.7 mS Ld 0.04 nH Cgs Rds Ri T Rs 1.1075 pF T 1.5 Ohm 3.6 psec Ls SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA SCHEMATI Lg PARAMETERS Rg Cgd Rd Gm Cgs Cds Ri Ld Lg 0.04 nH Rs Rg 1.93 Ohm Ls 0.01 nH 1.326 pF Cds 0.137 pF 2.487 Ohm Rds 111.5 Ohm Cgd 0.072 pF Rd 1.29 Ohm Gm 287.3 mS Ld 0.04 nH Cgs Rds T Rs Ri T 1.5 Ohm 4.64 psec Ls LARGE SIGNAL MODEL, VDS = 6 V, IDS = 80 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5/6 TC1304 REV5_20070502 SCHEMATIC TOM2 MODEL PARAMETERS Parameters Lg Rg Cgd Rid Rd Cgs Rdb Id Cds Ris Cbs Rs Ls Ld VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA -0.393 V 6.47 0.4622 0.0394 0.3935 0.78 0.1 0.01 4.255 ps 1.2 Ohm 1.29 Ohm 1.594 Ohm 1E-11 mA 1 1V 0.2 V Parameters VMAX CGD CGS CDS RIS RID VBR RDB CBS TNOM LS LG LD AFAC NFING 0.5 V 0.0754 pF 6.18 pF 0.1313 pF 2.2 Ohm 0.001 Ohm 9V 120 Ohm 0.042 pF 25 ℃ 0.01 nH 0.041 nH 0.04 nH 1 1 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃ ± 5 ℃ ; Handling Tool : Tweezers ; Time: less than 1min . WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil (0.018 or 0.025mm) gold wire. Stage Temperature: 220°C to 250°C ; Bond Tip Temperature : 150℃ ; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 6/6