TC1606N REV4_20070502 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 8 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Non-Via Holes Source for Self-Bias Application ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 18 V ! Lg = 0.6 µm, Wg = 5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1606N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, which has high linearity and high Power Added Efficiency. The device is processed without via-holes for self-bias applications. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point, f GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA MIN TYP 32.5 33 dBm 8 dB 43 dBm = 6 GHz VDS = 8 V, IDS = 500 mA rd IP3 Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA,*PSCL = 20 dBm PAE Power Added Efficiency at 1dB Compression Power, f IDSS = 6 GHz MAX UNIT 43 dB Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.2 A gm Transconductance at VDS = 2 V, VGS = 0 V 850 mS VP Pinch-off Voltage at VDS = 2 V, ID = 10 mA -1.7** Volts 22 Volts 8 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA Rth 18 Thermal Resistance Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1606N’s are divided into 3 groups: (1)TC1606NP1519 : Vp = -1.5V to -1.9V (2) TC1606NP1620 : Vp = -1.6V to -2.0V (3)TC1606NP1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/2 TC1606N REV4_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Rating Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature 12.0 V -5.0 V IDSS 30 dBm 7.7 W 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 1060 ! 12 D D D D Units: Micrometers Gate Pad: 76.0 x 59.5 470! 12 Chip Thickness: 50 Drain Pad: 86.0 x 76.0 S G S G S G S G S CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/2