TRANSCOM TC1301V

TC1301V
REV5_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
!
Via hole for source grouding
!
Low Noise Figure: NF = 0.8dB Typical at 12 GHz
!
High Associated Gain: Ga = 12 dB Typical at 12 GHz
!
High Dynamic Range: 1 dB Compression Power P-1 = 24.5
PHOTO ENLARGEMENT
dBm at 12 GHz
!
Breakdown Voltage: BVDGO ≥ 9 V
!
Lg = 0.25 µm, Wg = 600 µm
!
All-Gold Metallization for High Reliability
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
DESCRIPTION
The TC1301V is the same as TC1301 expect via holes in the source pads for reducing the grounding inductance.
The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
Conditions
NF
Noise Figure at VDS = 4 V, IDS = 50 Ma, f
Ga
Associated Gain at VDS = 4 V, IDS = 50 mA, f
MIN
= 12GHz
= 12GHz
MAX
0.8
1.0
UNIT
dB
10
12
dB
23.5
24.5
dBm
9
10
dB
180
mA
P1dB
Output Power at 1dB Gain Compression Point, f
GL
Linear Power Gain, f
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
gm
Transconductance at VDS = 2 V, VGS = 0 V
200
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA
-1.0*
Volts
BVDGO
Rth
= 12GHz,VDS = 6 V, IDS = 80 mA
TYP
= 12GHz,VDS = 6 V, IDS = 80 mA
Drain-Gate Breakdown Voltage at IDGO =0.3mA
Thermal Resistance
9
12
Volts
48
°C/W
Note: * For the tight control of the pinch-off voltage . TC1301V’s are divided into 3 groups:
(1) TC1301VP0710 : Vp = -0.7V to -1.0V (2) TC1301VP0811 : Vp = -0.8V to -1.1V
(3) TC1301VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/2
TC1301V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
600 µA
Pin
RF Input Power, CW
24 dBm
PT
Continuous Dissipation
800 mW
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
CHIP DIMENSIONS
430! 12
D
D
Units: Micrometers
Chip Thickness: 50
D
290! 12
S
G
S
G
S
G
S
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290℃ ± 5℃ ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond
Force : 20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/2