Product specification 2PB710A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 50 V). +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 500 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A Peak base current IBM -200 mA Total power dissipation Tamb 25 ; * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2PB710A Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Emitter cut-off current IEBO Testconditons = 0; VCB = -60 V; Tj = 150 IC = 0; VEB = -5 V 2PB710AQ 2PB710AR Typ IE = 0; VCB = -60 V IE DC current gain Min hFE IC = -150 mA; VCE = -10 V* 2PB710AS DC current gain IC = -500 mA; VCE = -10 V; * Max Unit -10 nA -5 ìA -10 nA 85 170 120 240 170 340 40 Collector-emitter saturation voltage VCEsat IC = -300 mA; IB = -30 mA * -600 mV Base-emitter saturation voltage VBEsat IC = -300 mA; IB = -30 mA * -1.5 V Cc IE = ie = 0; VCB = -10 V; f = 1 MHz 15 pF fT IC = -50 mA; VCE = -10 V; f = 100 MHz* Collector capacitance Transition frequency 2PB710AQ 2PB710AR 100 2PB710AS *. Pulse test: tp 300 ìs; ä 120 MHz 140 0.02. Marking Type Number 2PB710AQ 2PB710AR 2PB710AS Marking DQ DR DS http://www.twtysemi.com [email protected] 4008-318-123 2 of 2