TYSEMI 2PA1576

Product specification
2PA1576
Features
Low current (max. 100 mA)
Low voltage (max. 40 V).
Low collector capacitance (typ. 2.5 pF).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
mW
Total power dissipation
Ptot
200
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Testconditons
Min
Typ
IE = 0; VCB = -30 V
IE = 0; VCB = -30 V; Tj = 150
Emitter cut-off current
IEBO
IC = 0; VEB = -4 V
DC current gain
2PA1576Q
2PA1576R
2PA1576S
hFE
IC = -1 mA; VCE = -6 V
Collector-emitter saturation voltage
120
180
270
Cc
IE = ie = 0; VCB = -12 V; f = 1 MHz
Transition frequency
fT
IC = -2 mA; VCE = -12 V; f = 100 MHz
* Pulse test: tp
300 ìs; ä
Unit
-100
nA
-5
ìA
-100
nA
270
390
560
VCE(sat) IC = -50 mA; IB = -5 mA; *
Collector capacitance
Max
2.5
100
-500
mV
3.5
pF
MHz
0.02.
hFE Classification
TYPE
2PA1576Q
2PA1576R
2PA1576S
Marking
FQ
FR
FS
http://www.twtysemi.com
[email protected]
4008-318-123
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