Transistors IC SMD Type Product specification BCF81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 45 V). +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 100 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCF81 Electrical Characteristics Ta = 25 Parameter Symbol ICBO Testconditons Min Typ Max Unit IE = 0; VCB = 20 V 100 nA ICBO IE = 0; VCB = 20 V; Tj = 100 10 ìA Emitter cutoff current IEBO IC = 0; VEB = 5 V 100 nA DC current gain hFE IC = 2 mA; VCE = 5 V Collector cutoff current Collector-emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) 420 IC = 10 mA; IB = 0.5 mA 120 IC = 50 mA; IB = 2.5 mA 210 mV IC = 10 mA; IB = 0.5 mA 750 mV IC = 50 mA; IB = 2.5 mA Base to emitter voltage VBE IC = 2 mA; VCE = 5 V Collector capacitance CC IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz NF IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; 1 kHz; B = 200 Hz Noise figure 800 250 850 550 mV 700 2.5 mV pF 100 f= mV MHz 1.2 4 dB Marking Marking K9p http://www.twtysemi.com [email protected] 4008-318-123 2 of 2