Product specification 2PD1820A Features High current (max. 500 mA). Low voltage (max. 50 V). Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICM 1 A Peak base current IBM 200 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Testconditons Min Typ Max IE = 0; VCB = 20 V 10 nA ìA nA IE = 0; VCB = 20 V; Tj = 150 5 Emitter cut-off current IEBO IC = 0; VEB = 4 V 10 DC current gain 2PD1820AQ 2PD1820AR 2PD1820AS hFE IC = 150 mA; VCE = 10 V; * Collector-emitter saturation voltage Transition frequency * Pulse test: tp 300 ìs; ä 85 120 170 VCE(sat) IC = 300 mA; IB = 30 mA; * Collector capacitance Unit Cc IE = ie = 0; VCB = 10 V; f = 1 MHz fT IC = 50 mA; VCE = 10 V; f = 100 MHz;* 150 170 240 340 600 mV 15 pF MHz 0.02. hFE Classification TYPE 2PD1820AQ 2PD1820AR 2PD1820AS Marking AQ AR AS http://www.twtysemi.com [email protected] 4008-318-123 1 of 1