Product specification 2SA1745 Features Very small-sized package. Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector current (pulse) ICP -1 A Collector dissipation PC 150 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit -0.1 nA -0.1 nA Collector cutoff current IcBO VCB = -15V , IE = 0 Emitter cutoff current IEBO VEB = -4V , IC = 0 DC current Gain hFE VCE = -2V , IC = -10mA fT VCE = -2V , IC = -50mA Cob VCB = -10V , f = 1MHz 6.5 IC = -5mA , IB =-0.5mA -15 -35 mV IC = -200mA , IB =-10mA -200 -360 mV -0.95 -1.2 Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage VCE(sat) Base-to-emitter saturation voltage 135 600 400 VBE(sat) IC = -200mA , IB =-10mA MHz pF V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -20 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -15 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V hFE Classification ES Marking Rank 5 6 7 hFE 135 270 200 400 300 600 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1